IBM Journal of Research and Development

The notion of a functional relation among the attributes of a data set can be fruitfully applied in the structuring of an information system. These relations are meaningful both to the user of the system in his semantic understanding of the data, and to ...

This paper describes a method for predicting the paging behavior of a program in a virtual memory multiprogramming environment. The effect of overall system activity on the program is summarized in one parameter, the page survival index. The model ...

A methodology for computer performance evaluation based on the statistical characterization of response time is described. The results of its application to an information retrieval system are presented. The first part of the paper gives a general ...

In a multiprogramming, virtual-memory computing system, many processes compete for the main storage page frames and CPU's of the real system. It is customary to define a subset of these processes called the "multiprogramming set" (MPS), and to allocate ...

This paper deals with the problem of equalizing channels containing strong intersymbol interference. Typical of such channels are those of digital magnetic recording systems and data communication systems with partial-response signaling. First we ...

Let a k-partition of a graph be a division of the vertices into k disjoint subsets containing m₁ ≥ m₂,..., ≥m_k vertices. Let E_c be the number of edges whose two vertices belong to different subsets. Let λ₁ ≥ λ₂, ..., ≥ λ_k, be the k largest eigenvalues ...

Thin garnet films suitable for magnetic bubble devices can be made by depositing the film material onto nonmagnetic garnets such as Gd₃Ga₅O₁₂ (GGG). The performance of these devices is influenced by the dislocation content of the films. This, in turn, ...

An n-channel insulated-gate field-effect transistor technology established at IBM Research has served as the basis for further development leading to FET memory. Designs and characteristics of experimental devices of 500 and 1000 Å gate insulator ...

The development of a new device, called the space-charge-limited (SCL) transistor with transverse injection is reported in this paper. A theoretical model for space-charge-limited transistors, both npn and pnp, on high-resistivity silicon substrates is ...