Microelectronic Engineering

An optimized Ge-rich GeSbTe (GST) ternary alloy is investigated to improve the thermal stability of future phase change memories (PCMs). The patterning process used for their manufacturing may change the GST surface chemical ...

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• The patterning process of an optimized Ge-rich GeSbTe (GST) structure is studied.

It is essential to selectively etch Si₃N₄ in the presence of SiO₂ during the process of fabricating vertical 3D NAND structures. SiO₂ etching inhibitors can be added to H₃PO₄ to increase Si₃N₄-to-SiO₂ etch selectivity; however, the ...

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• Oxide regrowth occurs on Si3N4/SiO2 pair-layered stack 3D structure in selective Si3N4 etching.

Surface micromachined devices are known to have residual stress-induced deformation. This paper presents the effects of residual stress on the flatness of an electrothermally actuated large aperture MEMS bilayer platform. The platform ...

In this paper, comprehensive study on variation in composition ratio and thermal annealing of multilayer organic solar cells (OSC) has been demonstrated. Our previous work reported that in comparison to the conventional OSC structure, ...

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• Organic solar cell (OSC) with buffered P3HT layer added between PEDOT:PSS and P3HT:PCBM is presented.

In this work the results of basic material studies of the zinc and copper oxides as components of heterojunction solar cells were shown. Basing on the optical constants the light absorption properties and range of required thicknesses ...

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• Main principles for designing solar cells from inexpensive, earth-abundant ZnO/CuxO.

In this paper the detailed description of tapered optical fiber (TOF) fabrication process with the use of fusion splicer is given. Developed method allows TOF fabrication of a given waist region length l up to 4 mm with a micrometers ...

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• Tapered optical fiber with up to 4 mm long waist regions.
• Possibility of TOF ...

The bendable silicon-based ultra-thin chips (UTCs), with thickness below 50 μm are needed to provide high-performance flexible electronics for several emerging applications ranging from flexible displays to robotic e-skin. The UTCs ...

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• PDMS is used for front-side protection during alkaline wet etching of silicon.
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In this study, we propose to realize high-performance inertial Micro-Electro-Mechanical Systems (MEMS) mass sensors by the thick oxide as a mask layer fabrication technique. This method enables to reduce the air-gap to sub-μm in ...

In this work, we study the impact of roughness of TiN bottom electrode on the forming voltage of 1R TiN/HfO₂/Ti/TiN based ReRAM devices. A novel and atypical strategy is proposed to induce a controlled roughness of the bottom electrode,...

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• Evolution of the forming voltage of HfO2-based resistive memories as function of the roughness of TiN Bottom Electrode.