Microelectronic Engineering

The study on voltage hysteresis (V_Hys) and instability under the time dependence positive bias stress at a fixed temperature (PBTS) in amorphous silicon zinc tin oxide (a-SZTO) thin-film transistors (TFTs) has been investigated by ...

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• The a-SZTO TFTs under PBTS with different OFR have been studied.
• We clearly ...

In recent years, the fabrication of flexible electronic devices has been focused on the use eutectic gallium‑indium (EGaIn) liquid metal (LM) materials with polydimethylsiloxane (PDMS) microfluidics, which are less toxic. The flexible ...

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• This study presents smd-type LEDs, which are enhanced the bonding strength with PDMS microfluidics using a APTES.

A tri-layer lift-off photolithography technique is presented to enable the fabrication of surface acoustic wave (SAW) devices with near GHz fundamental operating frequencies. SAW devices require high-quality micron-scale features for ...

This paper reports the effect of the properties of a back-channel region of a vertical thin-film transistor (VTFT) on its electrical performance. The deposition of a thin layer of SiO₂ on a damaged back-channel region was found to ...

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• Back-channel interface of a VTFT was engineered.
• Back-channel interface ...

Recess process for opening a narrow trench in the capping layer for T-shaped gates is one of the most important steps in the fabrication of InP-InAlAs/InGaAs based high electron mobility transistors, since the recessed-width strongly ...

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• Results indicate that the dielectric layer can enhance the controllability of the recess-width by eliminating the erosion.

Arsenic is a poisonous contaminant affecting the environment as well as living beings, thus its determination is critical. The study describes the designing and fabrication of a conductometric biosystem for the indirect identification ...

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• The report describes the development and fabrication of an inhibition based electrochemical biosensor

This paper reports a new technique for fabrication of diaphragm and microchannel in a single step for the development of a piezoelectric MEMS acoustic sensor. It describes the design of the sensor based on ZnO to be utilized for aero-...

In order to solve the problem that the low-g omnidirectional MEMS inertial switches cannot recognize the load direction, a nickel omnidirectional MEMS inertial switch with identifiable load direction and uniform in-plane threshold ...

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• A low-g MEMS inertial switch with identifiable load direction was designed.
• The ...

We have investigated with X-ray Photoelectron Spectroscopy (XPS) the impact of different wet cleanings on the surface of thick GeSn 13% direct band-gap layers grown on germanium strain relaxed buffers. The XPS time-dependent study ...

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• Thick GeSn growth on Ge strain relaxed buffers
• GeSn surface cleaning and ...