Microelectronic Engineering

Memory resistor, or memristor, has been realized as a discrete electronic device and has a perspective application in the field of cryptography. The physical implementation of the memristor in chaotic circuits has been scarcely explored. In this ...

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• A memristor is constructed on silicon to make fabrication process more scalable.
• The memristor consists of spin-coated cobalt ferrite layer with active electrodes.
• The memristor is implemented in Chua's circuit that exhibits ...

Current research focuses on developing inexpensive, adaptable, portable, wearable electronic devices. Organic transistor-based devices play a crucial contribution in these developments. These devices have a low-temperature fabrication process, ...

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• The bottom gate top contact structure outperforms all other structures in the single gate structure.
• The dual gate structure improves performance by allowing independent control of charge carriers in two channels.
• Surface roughness,...

Transparent conductive films (TCFs) that converge high transmittance and high conductive properties are essential for many optoelectronic devices, and efforts have been made to acquire films with high transmittance as well as low resistance of ...

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• Prepared a negative photoresist with high reduction and realized its controllable patterning.
• Sliver mesh was prepared by in-situ reduction of Ag+ with patterned TA photoresist.
• Investigated the pH-dependent reduction and ...

Through‑silicon via (TSV) is one of the most important features in 3D integrated circuit (IC) and 2.5D packaging. Both are within the advanced packaging topic for the digital and analog ICs aligned with More than Moore's paradigm. This article ...

• The progress of CNTs in TSV for 3D ICs and 2.5D packaging is reviewed.
• RLGC modeling works and issues in fabrication suggest CNTs TSV technology is still in an infant stage.
• The high-density CNT forest is only ∼1% of the ...

The development of flexible electronics, better heat dissipation capabilities, increased LED light extraction efficiency, and the implementation of inverted barrier N-polar high electron mobility transistor (HEMT) for power electronics are all ...