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- ArticleAugust 2005
Measurements and modeling of intrinsic fluctuations in MOSFET threshold voltage
- Ali Keshavarzi,
- Gerhard Schrom,
- Stephen Tang,
- Sean Ma,
- Keith Bowman,
- Sunit Tyagi,
- Kevin Zhang,
- Tom Linton,
- Nagib Hakim,
- Steven Duvall,
- John Brews,
- Vivek De
ISLPED '05: Proceedings of the 2005 international symposium on Low power electronics and designPages 26–29https://doi.org/10.1145/1077603.1077611Fluctuations in intrinsic linear Vt, free of impact of parasitics, are measured for large arrays of NMOS and PMOS devices on a testchip in a 150nm logic technology. Local intrinsic σVT, free of extrinsic process, length and width variations, is random, ...