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Acknowledgements
This work was supported by National Key R&D Program of China (Grant No. 2021YFB3602404).
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Supporting information Appendixes A–E. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
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An, S., Mi, M., Wang, P. et al. A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. Sci. China Inf. Sci. 67, 119402 (2024). https://doi.org/10.1007/s11432-022-3720-9
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DOI: https://doi.org/10.1007/s11432-022-3720-9