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Magnetism and Néel skyrmion dynamics in GaV4S8ySey

T. J. Hicken, S. J. R. Holt, K. J. A. Franke, Z. Hawkhead, A. Štefančič, M. N. Wilson, M. Gomilšek, B. M. Huddart, S. J. Clark, M. R. Lees, F. L. Pratt, S. J. Blundell, G. Balakrishnan, and T. Lancaster
Phys. Rev. Research 2, 032001(R) – Published 1 July 2020
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Abstract

We present an investigation of the influence of low levels of chemical substitution on the magnetic ground state and Néel skyrmion lattice (SkL) state in GaV4S8ySey, where y=0,0.1,7.9, and 8. Muon-spin spectroscopy (μSR) measurements on y=0 and 0.1 materials reveal the magnetic ground state consists of microscopically coexisting incommensurate cycloidal and ferromagnetic environments, whereas chemical substitution leads to the growth of localized regions of increased spin density. μSR measurements of emergent low-frequency skyrmion dynamics show that the SkL exists under low levels of substitution at both ends of the series. Skyrmionic excitations persist to temperatures below the equilibrium SkL in substituted samples, suggesting the presence of skyrmion precursors over a wide range of temperatures.

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  • Received 19 March 2020
  • Revised 20 May 2020
  • Accepted 4 June 2020

DOI:https://doi.org/10.1103/PhysRevResearch.2.032001

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

T. J. Hicken1, S. J. R. Holt2, K. J. A. Franke1,*, Z. Hawkhead1, A. Štefančič2,†, M. N. Wilson1, M. Gomilšek1,‡, B. M. Huddart1, S. J. Clark1, M. R. Lees2, F. L. Pratt3, S. J. Blundell4, G. Balakrishnan2, and T. Lancaster1

  • 1Centre for Materials Physics, Durham University, Durham DH1 3LE, United Kingdom
  • 2Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
  • 3ISIS Pulsed Neutron and Muon Facility, STFC Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 OQX, United Kingdom
  • 4Department of Physics, Oxford University, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

  • *Present address: Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA; School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, United Kingdom.
  • Present address: Electrochemistry Laboratory, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland.
  • Present address: Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia.

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Issue

Vol. 2, Iss. 3 — July - September 2020

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Images

  • Figure 1
    Figure 1

    Real component of AC susceptibility in constant field Bext for (a) y=0 (b) y=0.1, (c) y=8, and (d) y=7.9. Lines indicate fields where μSR measurements were performed with white highlighting proposed SkL regions as based on μSR measurements (see the main text).

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  • Figure 2
    Figure 2

    (a)–(c) Internal magnetic-field distributions p(B) for GaV4S8, obtained via the FTs of ZF μSR data at several temperatures, compared to simulations of the FM* [Fig. 3] and cycloidal (C) states. Parameters from ZF μSR measurements of GaV4S8ySey for (d) and (e) y=0 and (f) y=0.1. The extracted internal fields seen in (d) are marked in (a)–(c). (g) p(B) for y=0,y=0.1, and y=0.2 with the B3 component marked for y=0.1 and y=0.2.

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  • Figure 3
    Figure 3

    (a) FM* ground state for GaV4S8 (V atoms are shown.) (b) Difference in spin density between y=0 and y=1 for Se substitution on the S3 site from DFT.

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  • Figure 4
    Figure 4

    Parameters from TF μSR measurements on (a) y=0, (c) y=0.1, (e) y=8, and (g) y=7.9; and LF measurements for (b) y=0, (d) y=0.1, (f) y=8, and (h) y=7.9. Dashed lines are suggested boundaries for the SkL. Fits in (b), (d), (f), and (h) are detailed in the text.

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