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Collinear orbital antiferromagnetic order and magnetoelectricity in quasi-two-dimensional itinerant-electron paramagnets, ferromagnets, and antiferromagnets

R. Winkler and U. Zülicke
Phys. Rev. Research 2, 043060 – Published 12 October 2020

Abstract

We develop a comprehensive quantitative theory for magnetoelectricity in magnetically ordered quasi-two-dimensional (quasi-2D) systems whereby in thermal equilibrium an electric field can induce a magnetization and a magnetic field can induce an electric polarization. This effect requires that both space-inversion and time-reversal symmetry are broken. Antiferromagnetic order plays a central role in this theory. We define a Néel operator τ such that a nonzero expectation value τ signals collinear antiferromagnetic order in the same way a magnetization signals ferromagnetic order. While a magnetization is even under space inversion and odd under time reversal, the operator τ describes a toroidal moment that is odd both under space inversion and under time reversal. Thus the magnetization and the toroidal moment τ quantify complementary aspects of collinear magnetic order in solids. Focusing on quasi-2D systems, itinerant-electron ferromagnetic order can be attributed to dipolar equilibrium currents that give rise to a magnetization. In the same way, antiferromagnetic order arises from quadrupolar equilibrium currents that generate the toroidal moment τ. In the magnetoelectric effect, the electric-field-induced magnetization can then be attributed to the electric manipulation of the quadrupolar equilibrium currents. We develop a k·p envelope-function theory for the antiferromagnetic diamond structure that allows us to derive explicit expressions for the Néel operator τ. Considering ferromagnetic zincblende structures and antiferromagnetic diamond structures, we derive quantitative expressions for the magnetoelectric responses due to electric and magnetic fields that reveal explicitly the inherent duality of these responses required by thermodynamics. Magnetoelectricity is found to be small in realistic calculations for quasi-2D electron systems. The magnetoelectric response of quasi-2D hole systems turns out to be sizable, however, with moderate electric fields being able to induce a magnetic moment of one Bohr magneton per charge carrier. Our theory provides a broad framework for the manipulation of magnetic order by means of external fields.

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  • Received 7 January 2020
  • Accepted 26 August 2020

DOI:https://doi.org/10.1103/PhysRevResearch.2.043060

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

R. Winkler1,2,3,4,5 and U. Zülicke6,7,2,1

  • 1Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA
  • 2Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 3Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 4Materials Science and Engineering, University of Illinois at Urbana-Champaign, Illinois 61801, USA
  • 5Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany
  • 6School of Chemical and Physical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, P. O. Box 600, Wellington 6140, New Zealand
  • 7Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA

Article Text

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Vol. 2, Iss. 4 — October - December 2020

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  • Figure 1
    Figure 1

    Variations of the diamond structure considered in this work. (a) Inversion-symmetric diamond structure. (b) Zincblende structure that breaks inversion symmetry. (c) Antiferromagnetic diamond structure that breaks time-reversal symmetry Θ and inversion symmetry I (though the joint operation ΘI remains a good symmetry). Materials with structure (a) are not magnetoelectric. Those with structure (b) become magnetoelectric when they are magnetized, whereas materials with structure (c) are intrinsically magnetoelectric.

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  • Figure 2
    Figure 2

    Dispersion of the lowest electron subbands in a quantum well with width w=150Å and barrier height V0=1.2eV for Ez=B=0. The red lines indicate the Fermi energy for an electron density Ns=1.0×1011cm2. Left column [(a) and (c)]: Dispersion E0±,kx for ferromagnetic InSb with Xx=8meV and BIA. Right column [(b) and (d)]: Dispersion E0kx for a diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV. The upper panels (a) and (b) show a zoom-in of the same dispersion as in panels (c) and (d) near kx=0.

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  • Figure 3
    Figure 3

    Ez-induced orbital magnetic moment per particle μBMyo [(a) and (b)] and By-induced displacement z representing the electrostatic polarization via Eq. (12) [(c) and (d)] in a quantum well with width w=150Å, barrier height V0=1.2eV, and electron density Ns=1.0×1011cm2. Left column [(a) and (c)]: Ferromagnetic InSb with Xx=8meV and BIA. Right column [(b) and (d)]: Diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV.

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  • Figure 4
    Figure 4

    Equilibrium current distribution j(z) in a quantum well with width w=150Å, barrier height V0=0.12eV, and electron density Ns=1.0×1011cm2. Left column [(a) and (c)]: Ferromagnetic InSb with Xx=8meV and BIA. Right column [(b) and (d)]: Diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV. Upper row [(a) and (b)]: symmetric quantum well (Ez=0). Lower row [(c) and (d)]: tilted quantum well (Ez=7kV/cm). In each panel, the dotted line shows for comparison the charge distribution ρ(z) (arbitrary units). In both configurations (FM+BIA and AFM), the applied electric field distorts the, at zero field purely quadrupolar, equilibrium-current-density component jx, thus inducing a finite magnetization in y direction [Figs. 3 and 3].

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  • Figure 5
    Figure 5

    (a) Angular dependence of the orientation of the magnetoelectric vector τ̃ [Eq. (51)] on the orientation of the Zeeman field Z in ferromagnets with BIA. (b) Angular dependence of the orientation of the magnetoelectric vector τ̃ [Eq. (92)], which is parallel to the vector k0 [Eq. (71)], on the orientation of the Néel vector N. The orientation of τ̃ in (b) is antiparallel to the orientation of τ̃ in (a) [82].

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  • Figure 6
    Figure 6

    Subband dispersion (lower panels) of the HH subband (black) and LH subband (gray) of a quantum well with barrier height V0=0.12eV and widths w=150Å [(a), (b), and (c)] and w=300Å [(d), (e), and (f)] for Ez=B=0. The upper panels show contour plots of the same dispersion with line increments of 0.1 meV. Red lines indicate the Fermi energy (lower panels) [Fermi contour (upper panels)] for a hole density Ns=1.0×1011cm2. Left column [(a) and (d)]: Paramagnetic InSb ignoring BIA. Center column [(b) and (e)]: Ferromagnetic InSb with Xx=8meV and BIA. Right column [(c) and (f)]: Diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV.

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  • Figure 7
    Figure 7

    Ez-induced orbital magnetic moment per particle μBMyo in a quantum well with barrier height V0=0.12eV and widths w=150Å [(a) and (b)] and w=300Å [(c) and (d)] and hole density Ns=1.0×1011cm2. Left column [(a) and (c)]: Ferromagnetic InSb with Xx=8meV and BIA. Right column [(b) and (d)]: Diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV.

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  • Figure 8
    Figure 8

    Equilibrium current distribution j(z) in a quantum well with barrier height V0=0.12eV, widths w=150Å [(a), (b), (c), and (d)] and w=300Å [(e), (f), (g), and (h)], and hole density Ns=1.0×1011cm2. Left column [(a), (c), (e), and (g)]: Ferromagnetic InSb with Xx=8meV and BIA. Right column [(b), (d), (f), and (h)]: Diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV. [(a), (b), (e), and (f)] Symmetric quantum well (Ez=0). [(c), (d), (g), and (h)] Tilted quantum well (Ez=7kV/cm). In each panel, the dotted line shows for comparison the charge distribution ρ(z) (arbitrary units).

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  • Figure 9
    Figure 9

    By-induced displacement z representing the electrostatic polarization via Eq. (12) in a quantum well with barrier height V0=0.12eV, widths w=150Å [(a) and (b)] and w=300Å [(c) and (d)], and hole density Ns=1.0×1011cm2. [(a) and (c)]: Ferromagnetic InSb with Xx=8meV and BIA. Right column [(b) and (d)]: Diamond antiferromagnet with InSb band-structure parameters (without BIA) and Yx=50meV.

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