PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
A special CdZnTe (CZT) device on THM grown crystal has been developed. The device has different work function
metals on opposite electrodes yet operates at room temperature like a conventional back-to-back symmetric MSM
detector and not a one directional Schottky diode device. Aiming at creating a big breakthrough in CZT imaging device
technology, the special CZT device presented in this study is capable of increasing the photopeak count by up to 50%
compared to conventional CZT imaging device while maintaining good room temperature energy resolution by not
significantly trading off detector leakage current. Pixel pad size and interpixel gap on a 20x20x5 mm3, 8x8 pixel pattern
that result in optimum detector efficiency and interpixel resistance are presented. Sensitivity improvement impact on
other device configuration will also be discussed. The design is highly practical, reliable and suitable for mass
production.
H. Chen,S. A. Awadalla,P. Marthandam,K. Iniewski,P. H. Lu, andG. Bindley
"CZT device with improved sensitivity for medical imaging and homeland security applications", Proc. SPIE 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI, 744902 (17 September 2009); https://doi.org/10.1117/12.828514
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
H. Chen, S. A. Awadalla, P. Marthandam, K. Iniewski, P. H. Lu, G. Bindley, "CZT device with improved sensitivity for medical imaging and homeland security applications," Proc. SPIE 7449, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XI, 744902 (17 September 2009); https://doi.org/10.1117/12.828514