Article

FinFET-based SRAM design

Authors:

Sriram Balasubramanian,

Radu Zlatanovici,

Borivoje NikolićAuthors Info & Claims

ISLPED '05: Proceedings of the 2005 international symposium on Low power electronics and design

Pages 2 - 7

https://doi.org/10.1145/1077603.1077607

Published: 08 August 2005 Publication History

Abstract

Intrinsic variations and challenging leakage control in today's bulk-Si MOSFETs limit the scaling of SRAM. Design tradeoffs in six-transistor (6-T) and four-transistor (4-T) SRAM cells are presented in this work. It is found that 6-T and 4-T FinFET-based SRAM cells designed with built-in feedback achieve significant improvements in the cell static noise margin (SNM) without area penalty. Up to 2x improvement in SNM can be achieved in 6-T FinFET-based SRAM cells. A 4-T FinFET-based SRAM cell with built-in feedback can achieve sub-100pA per-cell standby current and offer the similar improvements in SNM as the 6-T cell with feedback, making them attractive for low-power, low-voltage applications

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Cited By

Haq SSharma V(2023)Improved Stability for Robust and Low-Power SRAM Cell Using FinFET TechnologyJournal of Circuits, Systems and Computers10.1142/S021812662450106833:06Online publication date: 28-Oct-2023
https://doi.org/10.1142/S0218126624501068
Shastry VN TBasavaraju DV M(2023)Design and Characterization of 6T SRAM bitcell using 18nm FinFET2023 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER)10.1109/DISCOVER58830.2023.10316718(89-95)Online publication date: 13-Oct-2023
https://doi.org/10.1109/DISCOVER58830.2023.10316718
Mushtaq UWaseem Akram MPrasad D(2022)FinFET: A Revolution in Nanometer RegimeEmerging Electronics and Automation10.1007/978-981-19-4300-3_35(403-417)Online publication date: 10-Nov-2022
https://doi.org/10.1007/978-981-19-4300-3_35
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Index Terms

FinFET-based SRAM design
1. Hardware
  1. Emerging technologies
  2. Integrated circuits
    1. Semiconductor memory
      1. Static memory

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Published In

cover image ACM Conferences

ISLPED '05: Proceedings of the 2005 international symposium on Low power electronics and design

August 2005

400 pages

ISBN:1595931376

DOI:10.1145/1077603

General Chairs:
Kaushik Roy
Purdue University
,
Vivek Tiwari
Intel

Copyright © 2005 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Publication History

Published: 08 August 2005

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ISLPED05

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ISLPED05: International Symposium on Low Power Electronics and Design

August 8 - 10, 2005

CA, San Diego, USA

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Overall Acceptance Rate 398 of 1,159 submissions, 34%

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Cited By

Haq SSharma V(2023)Improved Stability for Robust and Low-Power SRAM Cell Using FinFET TechnologyJournal of Circuits, Systems and Computers10.1142/S021812662450106833:06Online publication date: 28-Oct-2023
https://doi.org/10.1142/S0218126624501068
Shastry VN TBasavaraju DV M(2023)Design and Characterization of 6T SRAM bitcell using 18nm FinFET2023 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics (DISCOVER)10.1109/DISCOVER58830.2023.10316718(89-95)Online publication date: 13-Oct-2023
https://doi.org/10.1109/DISCOVER58830.2023.10316718
Mushtaq UWaseem Akram MPrasad D(2022)FinFET: A Revolution in Nanometer RegimeEmerging Electronics and Automation10.1007/978-981-19-4300-3_35(403-417)Online publication date: 10-Nov-2022
https://doi.org/10.1007/978-981-19-4300-3_35
Chauhan VSamajdar D(2021)Recent Advances in Negative Capacitance FinFETs for Low-Power Applications: A ReviewIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control10.1109/TUFFC.2021.309561668:10(3056-3068)Online publication date: Oct-2021
https://doi.org/10.1109/TUFFC.2021.3095616
Yan-Yan DZhang GJiang Y(2021)Optimisation of SRAM cell in 7-nm node by response surface methodInternational Journal of Electronics10.1080/00207217.2021.1966674109:8(1307-1323)Online publication date: 5-Sep-2021
https://doi.org/10.1080/00207217.2021.1966674
Kaur GGill SRattan M(2021)Lanthanum Doped Zirconium Oxide (LaZrO2) High-k Gate Dielectric FinFET SRAM Cell OptimizationTransactions on Electrical and Electronic Materials10.1007/s42341-021-00296-2Online publication date: 13-Mar-2021
https://doi.org/10.1007/s42341-021-00296-2
Sil MMallik A(2021)On the logic performance of bulk junctionless FinFETsAnalog Integrated Circuits and Signal Processing10.1007/s10470-020-01782-yOnline publication date: 2-Jan-2021
https://doi.org/10.1007/s10470-020-01782-y
Duraivel NPaulchamy B(2020) Simulation and performance analysis of 15 Nm FinFET based carry skip adder Computational Intelligence10.1111/coin.1241737:2(799-818)Online publication date: 8-Dec-2020
https://doi.org/10.1111/coin.12417
Kim SKim MRyu DLee KKim SLee JLee RKim SLee JPark B(2020)Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETsIEEE Transactions on Electron Devices10.1109/TED.2020.298941667:6(2648-2652)Online publication date: Jun-2020
https://doi.org/10.1109/TED.2020.2989416
Turi MDelgado-Frias J(2020)Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power GatingIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2019.292292167:4(765-769)Online publication date: Apr-2020
https://doi.org/10.1109/TCSII.2019.2922921
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