Fundamentals of next generation compact MOSFET models
Pages 32 - 37
Abstract
It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIM-type models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.
References
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Index Terms
- Fundamentals of next generation compact MOSFET models
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Published In
September 2005
271 pages
ISBN:1595931740
DOI:10.1145/1081081
- General Chair:
- Carlos Galup-Montoro,
- Program Chairs:
- Sergio Bampi,
- Alex Orailoglu
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Published: 04 September 2005
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SBCCI05: 18th Symposium on Integrated Circuits and System Design
September 4 - 7, 2005
Florianolpolis, Brazil
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