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Design of mixed gates for leakage reduction

Published: 11 March 2007 Publication History

Abstract

Leakage power dissipation is one of the most critical factors for the overall current dissipation and future designs. However, design techniques for the reduction of leakage power should not decrease design performance. Therefore, an enhanced Dual Vth/Dual Tox CMOS ap-proach is presented which applies mixed gates consisting of different transistor types. The paper introduces the new and fundamental idea of different gate types before the various possible configurations are analyzed. This is followed by extraction and exploration of design rules and recommendations. Simulations of modified ISCAS'85 designs show an average leakage reduction of 60% at constant performance compared to raw designs. This corresponds to an additional reduction of 20% compared to previous Dual Vth/Dual Tox CMOS approaches.

References

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Kim, N.S., et. al.: Leakage Current: Moore's Law Meets Static Power, IEEE Computer, p. 68, no. 12, 2003.
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Tsai, Y., et. al.: Characterization & modeling of run-time techniques for leakage reduction. Tr. VLSI Syst. vol. 12, 2004.
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Yuan, L. and Qu, G.: Enhanced leakage reduction Technique by gate replacement. 42nd DAC, San Diego, 2005.
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Maken, P.: et. al.: A Voltage Reduction Technique for Digital Systems, ISSCC, 1990.
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Sundararajan, V. and Parhi, K.: Low Power Synthesis of Dual Vth CMOS VLSI Circuits, ISPLPED, 1999.
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Sultania, A.K., Sylvester, D., Sapatnekar, S.: Transistor and Pin Reordering for Gate Oxide Leakage Reduction in Dual Tox Circuits, 22nd ICCD, San Jose, USA, 2004.
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Wei, L., et. al.: Mixed-Vth (MVT) CMOS Circuit Design Methodology for Low Power Applications, 36th DAC, 1999.
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Hansen, M., Yalcin, H., Hayes, J. P. Unveiling the ISCAS-85 Benchmarks: A Case Study in Reverse Engineering, IEEE D&T, vol. 16, no. 3, pp. 72--80, July-Sept. 1999.
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  • (2019)Enhancing the Design of Body Built-In Sensor ArchitecturesOn-Chip Current Sensors for Reliable, Secure, and Low-Power Integrated Circuits10.1007/978-3-030-29353-6_4(55-77)Online publication date: 1-Oct-2019
  • (2012)CMOS Leakage and Power Reduction in Transistors and Circuits: Process and Layout ConsiderationsJournal of Low Power Electronics and Applications10.3390/jlpea20100012:1(1-29)Online publication date: 27-Jan-2012
  • (2012)Robust modular Bulk Built-in Current Sensors for detection of transient faults2012 25th Symposium on Integrated Circuits and Systems Design (SBCCI)10.1109/SBCCI.2012.6344422(1-6)Online publication date: Aug-2012
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    cover image ACM Conferences
    GLSVLSI '07: Proceedings of the 17th ACM Great Lakes symposium on VLSI
    March 2007
    626 pages
    ISBN:9781595936059
    DOI:10.1145/1228784
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Publication History

    Published: 11 March 2007

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    Author Tags

    1. gate leakage
    2. leakage current
    3. mixed gates
    4. threshold voltage

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    GLSVLSI07: Great Lakes Symposium on VLSI 2007
    March 11 - 13, 2007
    Stresa-Lago Maggiore, Italy

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    View all
    • (2019)Enhancing the Design of Body Built-In Sensor ArchitecturesOn-Chip Current Sensors for Reliable, Secure, and Low-Power Integrated Circuits10.1007/978-3-030-29353-6_4(55-77)Online publication date: 1-Oct-2019
    • (2012)CMOS Leakage and Power Reduction in Transistors and Circuits: Process and Layout ConsiderationsJournal of Low Power Electronics and Applications10.3390/jlpea20100012:1(1-29)Online publication date: 27-Jan-2012
    • (2012)Robust modular Bulk Built-in Current Sensors for detection of transient faults2012 25th Symposium on Integrated Circuits and Systems Design (SBCCI)10.1109/SBCCI.2012.6344422(1-6)Online publication date: Aug-2012
    • (2012)Optimal design of a dual-oxide nano-CMOS universal level converter for multi-Vdd SoCsAnalog Integrated Circuits and Signal Processing10.1007/s10470-012-9887-772:2(451-467)Online publication date: 1-Aug-2012
    • (2009)ILP based leakage optimization during nano-CMOS RTL synthesis: A DOXCMOS Versus DTCMOS perspective2009 World Congress on Nature & Biologically Inspired Computing (NaBIC)10.1109/NABIC.2009.5393744(1367-1372)Online publication date: Dec-2009
    • (2008)ULSACM Journal on Emerging Technologies in Computing Systems10.1145/1773814.17738196:2(1-26)Online publication date: 18-Jun-2008
    • (2008)Encountering gate oxide breakdown with shadow transistors to increase reliabilityProceedings of the 21st annual symposium on Integrated circuits and system design10.1145/1404371.1404407(111-116)Online publication date: 1-Sep-2008
    • (2008)A Dual Oxide CMOS Universal Voltage Converter for Power Management in Multi-VDD SoCs9th International Symposium on Quality Electronic Design (isqed 2008)10.1109/ISQED.2008.4479735(257-260)Online publication date: Mar-2008

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