200 Nanowebbers

The study and evaluation of 4H-SiC 200 mm substrates has revealed an increase of defect density that is generated by the seed expansion. Defects disappeared in 150 mm substrates have to be faced again in 200 mm like polytype inclusions,...

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• Study of 200 mm 4H-SiC substrates by Optical microscope, micro-Raman and profilometry techniques.

In this paper, we provide a comprehensive study on all aspects of development of normally-off multi-finger III-nitride HEMT on Silicon in cascode configuration. AlGaN/GaN HEMT epi-stack with in situ SiN cap was grown on 2-in. Silicon (111) using ...

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• Developed AlGaN/GaN HEMT stack on silicon via MOCVD with in-situ SiNx cap layer.The GaN layer shows the symmetric (002) and asymmetric (102) rocking curves with FWHMs of 0.22 deg. and 0.36 deg.
• Implemented bi-layer SiNx process for ...

Magneto-optical Faraday rotation (FR), optical absorption and magnetization of oxide glasses with high concentration of rare earth (RE) ions (up to 25 mol.% of R₂O₃, R: Pr³⁺, Dy³⁺ Eu^2-) are investigated. These glasses had a good transparence and high ...