A novel high speed optical detector
Authors: 
B. K. Mishra, R. B. Lohani, and S. C. PatilAuthors Info & Claims
B. K. Mishra, R. B. Lohani, and S. C. PatilAuthors Info & ClaimsICWET '10: Proceedings of the International Conference and Workshop on Emerging Trends in Technology
February 2010
Pages 892 - 894
Abstract
The paper presents a novel approach for detecting intensity modulated optical signal at microwave frequencies using high electron mobility transistor. The semi numerical model is developed using the basic semiconductor device equation. The change in the transconductance is due to the combination of photovoltaic effects in the gate Schottky barrier. The model describes an integral approach which includes the calculation of the capacitance and the sheet concentration of 2-DEG in the dark and illuminated condition. The paper has also taken in to consideration the effect of neutralization of donor, decrease in the barrier potential at the metal semiconductor interface under illumination, due to photovoltaic effect and the effect of photo-generation on the generation time constant.
References
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C. Y Chen et al, "Ultra high speed modulation-doped hetero-structure field-effect photo detector", Appl. Phys. Lett., Vol.-42, p. 1040, 1983.
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H. Mitra, D. P. Singh and B. B. Pal, "Effect of signal modulated optical radiation on the characteristics of a MODFET", Appl. Phy., Vol.-A56, p. 335, 1993.
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Index Terms
- A novel high speed optical detector
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- UNITECH: Unitech Engineers, India
- AICTE: All India Council for Technical Education
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Published: 26 February 2010
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ICWET '10
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- UNITECH
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ICWET '10: International Conference and Workshop on Emerging Trends in Technology
February 26 - 27, 2010
Maharashtra, Mumbai, India
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