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Design considerations for variation tolerant multilevel CMOS/Nano memristor memory

Published: 16 May 2010 Publication History
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  • Abstract

    With technology migration into nano and molecular scales several hybrid CMOS/nano logic and memory architectures have been proposed thus far that aim to achieve high device density with low power consumption. The discovery of the memristor has further enabled the realization of denser nanoscale logic and memory systems. This work describes the design of such a multilevel memristor memory (MLMM) system, and the design constraints imposed in the realization of such a memory. In particular, the limitations on load, bank size, number of bits achievable per device, placed by the required noise margin (NM) for accurately reading the data stored in a device are analyzed.

    References

    [1]
    D. B. Strukov, G. S. Snider, D. R. Stewart, S. R. Williams, "The missing memristor found," Nature, vol. 453, no. 7191, pp.80--83, 2008.
    [2]
    G. S. Snider, "Memristors as synapses in a neural computing architecture," Memristor and Memristive systems Symposium, Nov 2008.
    [3]
    A. Chen, S. Haddad, Y. C. Wu, T. N. Fang et al. "Non-volatile resistive switching for advanced memory applications," in Proc. Of IEEE Elec. Dev. Mtg., pp. 746--749, 2005.
    [4]
    G. S. Rose, Y. Tao, J. M. Tour, M. R. Stan et al. "Designing CMOS/Molecular memories while considering device parameter variations," ACM Journal on Emerging Technologies and Computing Systems, vol. 3, no. 1, April 2007.
    [5]
    R. Bez and A. Pirovano, "Non-volatile memory technologies: Emerging concepts and new materials," Materials Science in Semiconductor Processing, vol. 7, no. 4--6, pp. 349--355, 2004.
    [6]
    S. Kim, Y. Zhang, B. Lee; M. Caldwell, H. -S. P. Wong, "Fabrication and characterization of emerging nanoscale memory," ISCAS, pp. 65--68, 2009.
    [7]
    M. M. Ziegler and M. R. Stan, "Design and analysis of crossbar circuits for molecular nanoelectronics," In Proceedings of the IEEE Conference on Nanotechnology, 2002: pp. 323--327.
    [8]
    J. R. Hauser, "Noise margin criteria for digital logic circuits," IEEE Trans. on Education, vol. 36, no. 4, pp. 363--368, Nov 1993.
    [9]
    T. Ogura et al. "A 1.8-V 256-Mb Multilevel Cell NOR Flash Memory with BGO Function," IEEE Journal of Solid-State Circuits, vol. 41, pp. 2589--2600, 2006.
    [10]
    M. Bauer et al. "A Multilevel-Cell 32Mb Flash Memory," IEEE Int. Solid-State Circuits Conf., Digest of Technical Papers, pp. 132--133, 1995.
    [11]
    S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y.-C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S.-H. Chen, H.-L. Lung, and C. H. Lam, "Phase-change random access memory: A scalable technology," IBM J. Res. & Dev., vol. 52, No. 4/5, pp. 465--479, 2008.
    [12]
    M. Liu, Z. Abid, W. Wang, X. He, Q. Liu, and W. Guan, "Multi-Level Resistive Switching with Ionic and Metallic Filaments," Applied Physics Letters, vol. 94, no. 23, id. 233106 (3 pages), 2009.
    [13]
    Qi Liu, Chunmeng Dou, Yan Wang, Shibing Long, Wei Wang, et. al. "Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device," Applied Physics Letters, vol. 95, id. 023501, Jul. 2009.
    [14]
    W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, "On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt," Applied Physics Letters, vol. 93, no. 22, id. 223506 (3 pages) Dec. 2008.

    Cited By

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    • (2023)Test Optimization in Memristor Crossbars Based on Path SelectionIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.316878242:1(294-307)Online publication date: Jan-2023
    • (2023)A pulse train controlled Buck converter based on a single memristive multi-vibratorInternational Journal of Electronics10.1080/00207217.2023.2267211(1-23)Online publication date: 17-Oct-2023
    • (2023)Soft Error Tolerant Memristor-Based MemoryProceedings of International Conference on Information and Communication Technology for Development10.1007/978-981-19-7528-8_33(421-434)Online publication date: 26-Jan-2023
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    1. Design considerations for variation tolerant multilevel CMOS/Nano memristor memory

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          cover image ACM Conferences
          GLSVLSI '10: Proceedings of the 20th symposium on Great lakes symposium on VLSI
          May 2010
          502 pages
          ISBN:9781450300124
          DOI:10.1145/1785481
          Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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          Publication History

          Published: 16 May 2010

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          Author Tags

          1. CMOS/nano
          2. memristor
          3. multi level memories

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          GLSVLSI '10: Great Lakes Symposium on VLSI 2010
          May 16 - 18, 2010
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          Cited By

          View all
          • (2023)Test Optimization in Memristor Crossbars Based on Path SelectionIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2022.316878242:1(294-307)Online publication date: Jan-2023
          • (2023)A pulse train controlled Buck converter based on a single memristive multi-vibratorInternational Journal of Electronics10.1080/00207217.2023.2267211(1-23)Online publication date: 17-Oct-2023
          • (2023)Soft Error Tolerant Memristor-Based MemoryProceedings of International Conference on Information and Communication Technology for Development10.1007/978-981-19-7528-8_33(421-434)Online publication date: 26-Jan-2023
          • (2022)Fault-Tolerant Deep Neural Networks for Processing-In-Memory based Autonomous Edge Systems2022 Design, Automation & Test in Europe Conference & Exhibition (DATE)10.23919/DATE54114.2022.9774523(424-429)Online publication date: 14-Mar-2022
          • (2022)An Efficient Triple-Error Correction Method for Memristor-Based Memory Systems2022 12th International Conference on Electrical and Computer Engineering (ICECE)10.1109/ICECE57408.2022.10088479(380-383)Online publication date: 21-Dec-2022
          • (2022)On Memristors for Enabling Energy Efficient and Enhanced Cognitive Network FunctionsIEEE Access10.1109/ACCESS.2022.322644710(129279-129312)Online publication date: 2022
          • (2021)HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural NetworkJournal of Circuits, Systems and Computers10.1142/S021812662150274130:15Online publication date: 26-May-2021
          • (2021)Improving DNN Fault Tolerance using Weight Pruning and Differential Crossbar Mapping for ReRAM-based Edge AI2021 22nd International Symposium on Quality Electronic Design (ISQED)10.1109/ISQED51717.2021.9424332(135-141)Online publication date: 7-Apr-2021
          • (2021)ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation MemoryIEEE Access10.1109/ACCESS.2021.30980619(105012-105047)Online publication date: 2021
          • (2021)Aggressive Fault Tolerance for Memristor Crossbar-Based Neural Network Accelerators by Operational Unit Level Weight MappingIEEE Access10.1109/ACCESS.2021.30977249(102828-102834)Online publication date: 2021
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