Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
skip to main content
10.1145/333032.333037acmconferencesArticle/Chapter ViewAbstractPublication PagesslipConference Proceedingsconference-collections
Article
Free access

Performance analysis and technology of 3-D ICs

Published: 08 April 2000 Publication History
  • Get Citation Alerts
  • First page of PDF

    References

    [1]
    K. C. Saraswat and F. Mohammadi, ``Effect of Interconnection Scaling on Time Delay of VLSI Circuits,'' IEEE Transaction Electron Devices, Vol. ED-29, April, 1982., pp. 645--650.
    [2]
    The National Technology Roadmap for Semiconductors, Technology Needs, 1997.
    [3]
    S. J. Souri and K. C. Saraswat, "Interconnect performance modeling for 3-D integrated circuits with multiple Si layers," Int. Interconnect Technology Conf. Proceedings, 1999, pp. 24-26.
    [4]
    A. Rahman, A. Fan, J. Chung, and R. Reif, "Wire-length distribution of three-dimensional integrated circuits," Int. Interconnect Technology Conf. Proceedings, 1999, pp. 233- 235.
    [5]
    J. A. Davis, V. K. De, and J. D. Meindl, "A stochastic wire-length distribution for gigascale integration (GSI) - Part II: Applications to clock frequency, power dissipation, and chip size estimation," IEEE Trans. Electron Devices, Vol. 45, no. 3, March 1998.
    [6]
    B. S. Landman, and R. L. Russo, "On a pin versus block relationship for partitions of logic graphs," IEEE Trans. Computers, vol. C-20, no. 12, Dec. 1971.
    [7]
    M. W. Geis, D. C. Flanders, D. A. Antoniadis, and H. I. Smith, "Crystalline silicon on insulators by graphoepitaxy," IEDM Tech. Dig., 1979, pp. 210-212.
    [8]
    A. Kohno, T. Sameshima, N. Sano, M. Sekiya, and M. Hara, "High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processing," IEEE Trans. Electron Devices, vol 42, no. 2, pp. 251-257, 1995.
    [9]
    M. A. Crowder, P. G. Carey, P. M. Smith, R. S. Sposili, H. S. Cho, and J. S. Im, "Low-temperature single crystal Si TFT's fabricated on Si-films processed via sequential lateral solidification," IEEE Electron Device Lett., vol. 19, no. 8, pp. 306-308, 1986.
    [10]
    A. W. Wang and K. C. Saraswat, "Modeling of grain size variation effects in polycrystalline thin film transistors," Technical Digest of the IEEE International Electron Device Meeting, San Francisco., December 1998., pp. 277-280.
    [11]
    G. W. Neudeck, S. Pae, J. P. Denton, and T. Su, "Multiple layers of silicon-on-insulator for nanostructure devices," J. Vac. Sci. Technol. B 17(3), pp. 994-998, 1999.
    [12]
    H-Y. Lin, C-Y. Chang, T. F. Lei, J-Y. Cheng, H-C. Tseng, and L-P. Chen, "Characterization of polycrystalline silicon thin film transistors fabricated by ultrahigh-vacuum chemical vapor deposition and chemical mechanical polishing," Jpn. J. Appl. Phys., Part 1, vol.36, (no.7A), pp. 4278-4282, July 1997.
    [13]
    D. Antoniadis, "3-dimensional 25 nm - scale CMOS technology," Advanced Microelectronics Program Review Proceedings Book, Sept. 1-2, Lexington, MA, 1998.
    [14]
    V. Subramanian and K. C. Saraswat, "High-performance germanium-seeded laterally crystallized TFT's for vertical device integration," IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1934-1939, 1998.
    [15]
    J. A. Tsai, A. J. Tang, T. Noguchi, and R. Reif, "Effects of Ge on material and electrical properties of polycrystalline Si1-xGex for thin film transistors," J. Electrochem. Soc., vol. 142, no. 9, pp. 3220-3225, 1995.
    [16]
    S-W. Lee and S-K. Joo, "Low temperature poly-Si thin film transistor fabrication by metal-induced lateral crystallization," IEEE Electron Device Lett., vol. 17, no. 4, pp. 160-162, 1983.
    [17]
    S. Y. Yoon, S. K. Kim, J. Y. Oh, Y. J. Choi, W. S. Shon, C. O. Kim, and J. Jang, "A high-performance polycrystalline silicon thin-film transistor using metal-induced crystallization with Ni solution," Jpn. J. Appl. Phys., Part 1, pp. 7193-7197, Dec. 1998.
    [18]
    A. R. Joshi and K. C. Saraswat, "Sub-micron thin film transistors with metal induced lateral crystallization," Abstract no. 1358, Proc. 196 th Meeting of the Electrochemical Society, Honolulu, HI, 1999.
    [19]
    J. Nakata and K. Kajiyama, "Novel low-temperature recrystalization of amorphous silicon by high energy beam," Appl. Phys. Lett., pp. 686-688, 1982.
    [20]
    Y. W. Choi, J. N. Lee, T. W. Jang, and B. T. Ahn, "Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing," IEEE Electron Device Lett., vol. 20, no. 1, pp. 2-4, 1999.
    [21]
    A. Heya, A. Masuda, and H. Matsumura, "Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten," Appl. Phys. Lett., vol. 74, no. 15, pp. 2143-2145, 1999.
    [22]
    D. B. Tuckerman, R. F. W. Pease, "High-performance heat sinking for VLSI," IEEE Electron Device Lett., vol. EDL-2, no.5, pp.126-129, 1981.

    Cited By

    View all
    • (2021)Geometrical optimization of boron arsenide inserts embedded in a heat spreader to improve its cooling performance for three dimensional integrated circuitsNumerical Heat Transfer, Part A: Applications10.1080/10407782.2021.1947626(1-22)Online publication date: 21-Jul-2021
    • (2015)Monolithic 3-D FPGAsProceedings of the IEEE10.1109/JPROC.2015.2433954103:7(1197-1210)Online publication date: Jul-2015
    • (2011)3D-HIMProceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures10.1109/NANOARCH.2011.5941484(59-64)Online publication date: 8-Jun-2011
    • Show More Cited By

    Recommendations

    Comments

    Information & Contributors

    Information

    Published In

    cover image ACM Conferences
    SLIP '00: Proceedings of the 2000 international workshop on System-level interconnect prediction
    April 2000
    149 pages
    ISBN:1581132492
    DOI:10.1145/333032
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

    Sponsors

    Publisher

    Association for Computing Machinery

    New York, NY, United States

    Publication History

    Published: 08 April 2000

    Permissions

    Request permissions for this article.

    Check for updates

    Author Tags

    1. 3-D
    2. ICs
    3. VLSI
    4. circuits
    5. interconnect

    Qualifiers

    • Article

    Conference

    SLIP00
    Sponsor:

    Acceptance Rates

    Overall Acceptance Rate 6 of 8 submissions, 75%

    Contributors

    Other Metrics

    Bibliometrics & Citations

    Bibliometrics

    Article Metrics

    • Downloads (Last 12 months)24
    • Downloads (Last 6 weeks)9
    Reflects downloads up to 12 Aug 2024

    Other Metrics

    Citations

    Cited By

    View all
    • (2021)Geometrical optimization of boron arsenide inserts embedded in a heat spreader to improve its cooling performance for three dimensional integrated circuitsNumerical Heat Transfer, Part A: Applications10.1080/10407782.2021.1947626(1-22)Online publication date: 21-Jul-2021
    • (2015)Monolithic 3-D FPGAsProceedings of the IEEE10.1109/JPROC.2015.2433954103:7(1197-1210)Online publication date: Jul-2015
    • (2011)3D-HIMProceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures10.1109/NANOARCH.2011.5941484(59-64)Online publication date: 8-Jun-2011
    • (2006)Placement of thermal vias in 3-D ICs using various thermal objectivesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2006.87006925:4(692-709)Online publication date: 1-Nov-2006
    • (2005)The impact of interstratal interconnect density on the performance of three-dimensional integrated circuitsProceedings of the 2005 international workshop on System level interconnect prediction10.1145/1053355.1053372(73-78)Online publication date: 2-Apr-2005
    • (2005)Designing for signal integrity in wave-pipelined SOC global interconnects2005 Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics10.1109/SOCC.2005.1554496(207-210)Online publication date: 2005
    • (2004)Toward the accurate prediction of placement wire length distributions in VLSI circuitsIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2004.82585112:4(339-348)Online publication date: 1-Apr-2004
    • (2003)An edge-defined nano-lithography technique suitable for low thermal budget process and 3-D stackable devices2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003.10.1109/NANO.2003.1230956(502-505)Online publication date: 2003
    • (2001)Wirelength estimation based on rent exponents of partitioning and placementProceedings of the 2001 international workshop on System-level interconnect prediction10.1145/368640.368658(25-31)Online publication date: 1-Mar-2001

    View Options

    View options

    PDF

    View or Download as a PDF file.

    PDF

    eReader

    View online with eReader.

    eReader

    Get Access

    Login options

    Media

    Figures

    Other

    Tables

    Share

    Share

    Share this Publication link

    Share on social media