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Novel Methodology for Assessing Chip-Package Interaction Effects onChip Performance

Published: 13 April 2022 Publication History

Abstract

The paper presents a multiscale simulation methodology and EDA tool that assesses the effect of thermal mechanical stresses arising after die assembly on chip performance. Existing non uniformities of feature geometries and composite nature of on-chip interconnect layers are addressed by developed methodology of the anisotropic effective thermomechanical material properties (EMP) that reduces complexity of FEA simulations and enhances the accuracy and performance. Physical nature of the calculated EMP makes it scalable with the simulation grid size, which enables resolution of stress/strain at different scales from package to device channel. With feature-scale resolution, the tool enables accurate calculation of stress components in the active region of each device, where the carrier mobility variation results in deviations of circuits performance. The tool's capability of back-annotation of the hierarchic Spice netlist with the stress values allows a user to perform circuit simulation in different stress environments, by placing the circuit block in different locations in the layout characterized by different distances from the stress sources, such as die edges and C4 bumps. Both schematic and post-layout netlists can be employed for finding optimal floorplan minimizing the stress impact at early design stages, as well as for the final design sign-off. Electrical measurements on a specially designed test-package were used for validation of the methodology. Good agreement between measured and simulated variations of device characteristics has been demonstrated.

References

[1]
R. Radojcic, More-than-Moore 2.5D and 3D SiP Integration, Springer, 2017.
[2]
Radojcic, R., Nowak, M., and Nakamoto, M., 2011, "TechTuning: Stress management for 3D Through-Si-Via stacking technologies", International Workshop on Stress Management for 3D ICs Using Through Silicon Vias, AIP Conf. Proc. 1378, pp. 5--20.
[3]
V. Sukharev, J-H Choy, A. Kteyan, H. Hovsepyan, M. Nakamoto, W. Zhao, R. Radojcic, U. Muehle, and E. Zschech, "Carrier Mobility Shift in Advanced Silicon Nodes Due to Chip Package Interaction," Journal of Electronic Packaging, vol.139, 020906, 2017.
[4]
A. Kteyan, G. Gevorgyan, H. Hovsepyan, J. Choy, V. Sukharev, "Stress assessment for device performance in three-dimensional IC: linked package-scale/die-scale/feature-scale simulation flow", J. Micro/Nanolith. MEMS MOEMS 13(1), 011203, 2014.
[5]
V. Sukharev, A. Kteyan, J. Choy, "An accurate assessment of Chip-Package Interaction is a key factor for designing resilient 3D IC systems", 2019 International 3D Systems Integration Conference (3DIC), Sedai, Japan, 2019.
[6]
J. Choy, V. Sukharev, and A. Kteyan, "Advanced methodology for assessing chip package interaction effects on chip performance and reliability after chip assembly and during chip operation", J.Vac.Sci.Technol. B, vol.38, 063205, 2020.
[7]
R.M. Jones, Mechanics of Composite Materials, Hemisphere Publishing Corporation, New York (1975).
[8]
Smith, C., 1954, "Piezoresistance effect in germanium and silicon", Phys. Rev., 94(1), pp. 42--49.

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  1. Novel Methodology for Assessing Chip-Package Interaction Effects onChip Performance

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    cover image ACM Conferences
    ISPD '22: Proceedings of the 2022 International Symposium on Physical Design
    April 2022
    240 pages
    ISBN:9781450392105
    DOI:10.1145/3505170
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    Publication History

    Published: 13 April 2022

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    Author Tags

    1. bending
    2. chip-package interaction
    3. finite element analysis
    4. netlist
    5. thermo-mechanical stress

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    ISPD '22: International Symposium on Physical Design
    March 27 - 30, 2022
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    Overall Acceptance Rate 62 of 172 submissions, 36%

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