A Behavioural Compact Model for Programmable Neuromorphic ReRAM
Authors: 
Mohamad Moner Al Chawa, Ronald Tetzlaff, 
Christos Tjortjis, Stavros G. Stavrinides, Carol De Benito, Rodrigo PicosAuthors Info & Claims
Mohamad Moner Al Chawa, Ronald Tetzlaff, Christos Tjortjis, Stavros G. Stavrinides, Carol De Benito, Rodrigo PicosAuthors Info & ClaimsArticle No.: 2, Pages 1 - 3
Abstract
In this work, we present a compact memristor model for bipolar neuromorphic ReRAM devices. The proposed model focuses on a behavioural high level description of the device, and it reproduces some of the most important characteristics (i.e. conductance, energy dissipation), using the number of pulses as the input variable instead of any electrical. Its functionality is shown by using it to model the behavior of three different ReRAM devices that were fabricated and measured at the CNR-IMM, Agrate Brianza. Considering a train of identical pulses as an input voltage signal consisting of N pulses and where m is the pulse number. The conductance during depression or potentiation can be described.
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Index Terms
- A Behavioural Compact Model for Programmable Neuromorphic ReRAM
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Published In
December 2023
222 pages
ISBN:9798400703256
DOI:10.1145/3611315
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Published: 25 January 2024
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- MCIN/AEI/10.13039/501100011033 and by ?ERDF A way of making Europe?
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NANOARCH '23
NANOARCH '23: 18th ACM International Symposium on Nanoscale Architectures
December 18 - 20, 2023
Dresden, Germany
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Overall Acceptance Rate 55 of 87 submissions, 63%
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