Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
skip to main content
10.1145/3650400.3650668acmotherconferencesArticle/Chapter ViewAbstractPublication PageseitceConference Proceedingsconference-collections
research-article

Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure

Published: 17 April 2024 Publication History

Abstract

In this paper, a novel SiC superjunction metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated MOS junction barrier Schottky diode (MJBS) is proposed, in which the n-pillar is directly connected to the source electrode to form a Schottky contact at the top, and a part of polycrystalline silicon is connected to the source electrode by inserting an oxide layer in the centre of the trench gate to form a split gate and a body diode is in the on state to form a MOS channel electron accumulation layer, electrons can easily flow from the n-pillar into the source contact, and the turn-on voltage Vth is reduced by 61. 3% compared to a superjunction MOSFET that only forms a Schottky contact, which further reduces the static loss of the built-in diode when it conducts. The conduction of the Schottky diode during reverse recovery is enhanced. As a result, the hole injection efficiency of the body diode can be reduced, thereby lowering the reverse recovery charge (Qrr) and further suppressing reverse recovery oscillations. Compared with the parasitic body diode, the unipolar conduction generated by the channel diode effectively optimises the reverse recovery performance and switching characteristics, and the simulation results show that the reverse recovery charge (Qrr) and peak reverse recovery current (Irrm) of the proposed SJ MOSFETs are reduced by about 74.9% and 69.7%, respectively, and the total switching energy loss ESW is reduced by 73.6%.

References

[1]
K. Hamada, M. Nagao, M. Ajioka and F. Kawai, "SiC-Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles," in IEEE Transactions on Electron Devices, vol. 62, no. 2, pp. 278-285, Feb. 2015.
[2]
Volodymyr N, Oleksandr P, Denys H, Prospects for the development of power electronics by application of technologies for production of power semiconductor switches based on silicon carbide[J]. Industry 4.0, 2020, 5(4): 170-173.
[3]
J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, “Status and prospects for SiC power MOSFETs,” IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 658–664, Apr. 2002.
[4]
Tominaga, Takaaki, "Superior switching characteristics of SiC-MOSFET embedding SBD." 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2019.
[5]
Tsuchida, H., "Suppression of Bipolar Degradation in 4H-SiC Power Devices by Carrier Lifetime Control." 2019 IEEE International Electron Devices Meeting (IEDM). IEEE, 2019.
[6]
X. Zhou, "SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode," in IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 582-587, Feb. 2020.
[7]
M. Huang, "A Multiepi Superjunction MOSFET With a Lightly Doped MOS-Channel Diode for Improving Reverse Recovery," in IEEE Transactions on Electron Devices, vol. 68, no. 5, pp. 2401-2407, May 2021.
[8]
J. Wei, M. Zhang, H. Jiang, X. Zhou, B. Li and K. J. Chen, "Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Nμmerical Simulation Study," in IEEE Electron Device Letters, vol. 40, no. 7, pp. 1155-1158, July 2019.
[9]
P. Li, J. Guo, Z. Lin and S. Hu, "A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery," in IEEE Journal of the Electron Devices Society, vol. 9, pp. 300-305, 2021.
[10]
He Q, Luo X, Liao T, 4H-SiC superjunction trench MOSFET with reduced saturation current[J]. Superlattices and Microstructures, 2019, 125: 58-65.

Index Terms

  1. Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure

    Recommendations

    Comments

    Information & Contributors

    Information

    Published In

    cover image ACM Other conferences
    EITCE '23: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering
    October 2023
    1809 pages
    ISBN:9798400708305
    DOI:10.1145/3650400
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than the author(s) must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected].

    Publisher

    Association for Computing Machinery

    New York, NY, United States

    Publication History

    Published: 17 April 2024

    Permissions

    Request permissions for this article.

    Check for updates

    Qualifiers

    • Research-article
    • Research
    • Refereed limited

    Conference

    EITCE 2023

    Acceptance Rates

    Overall Acceptance Rate 508 of 972 submissions, 52%

    Contributors

    Other Metrics

    Bibliometrics & Citations

    Bibliometrics

    Article Metrics

    • 0
      Total Citations
    • 7
      Total Downloads
    • Downloads (Last 12 months)7
    • Downloads (Last 6 weeks)2
    Reflects downloads up to 18 Aug 2024

    Other Metrics

    Citations

    View Options

    Get Access

    Login options

    View options

    PDF

    View or Download as a PDF file.

    PDF

    eReader

    View online with eReader.

    eReader

    HTML Format

    View this article in HTML Format.

    HTML Format

    Media

    Figures

    Other

    Tables

    Share

    Share

    Share this Publication link

    Share on social media