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Abstract
The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at ${\sim}{275}\;{\rm nm}$ was carried out, with an emphasis on fabricated devices having a diameter of 300, 200, 100, 50, and 20 µm, respectively. It was revealed that the LED chips with smaller mesa areas deliver considerably higher light output power density; meanwhile, they can sustain a higher current density, which is mainly attributed to the enhanced current spreading uniformity in micro-scale chips. Importantly, when the diameter of LED chips decreases from 300 µm to 20 µm, the peak external quantum efficiency (EQE) increases by 20%, and the EQE peak current density can be boosted from ${8.85}\;{{\rm A/cm}^2}$ and ${99.52}\;{{\rm A/cm}^2}$. Moreover, we observed a longer wavelength emission with enlarged full-width at half-maximum (FWHM) in the LEDs with smaller chip sizes because of the self-heating effect at high current injection. These experimental observations provide insights into the design and fabrication of high-efficiency micro-LEDs emitting in the DUV regime with different device geometries for various future applications.
© 2021 Optical Society of America
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