Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors
Abstract
:1. Introduction
2. Configuration of the SiNW Pressure Sensor and Basic Theory
2.1. Structure of the SiNW Pressure Sensor
2.2. The Sensitivity of the SiNW Pressure Sensor
2.3. The SNR of the SiNW Pressure Sensor
3. Sensor Design
3.1. Design Optimization Based on Finite Element Simulation
3.2. Sensor Sensitivity and SNR Analysis
4. Fabrication Process of SOI Piezoresistive Sensor
5. Experimental Section and Discussion
5.1. Experimental Setup
5.2. Sensor Output Result
5.3. Data Fusion Using PSO–BP Algorithm
5.3.1. PSO–BP Neural Network Algorithm Overview
5.3.2. Temperature Compensation by PSO–BP Data Fusion Algorithm
6. Conclusions and Future Work
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Pressure | P = 0 kPa | P = 10 kPa | P = 20 kPa | P = 30 kPa | P = 40 kPa | P = 50 kPa | P = 60 kPa | P = 70 kPa | P = 80 kPa | P = 90 kPa | P = 100 kPa | |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Temperature | ||||||||||||
T = −20 °C | Up = 2.20 mV | Up = 7.68 mV | Up = 15.12 mV | Up = 20.00 mV | Up = 28.88 mV | Up = 35.44 mV | Up = 42.11 mV | Up = 48.88 mV | Up = 56.00 mV | Up = 63.13 mV | Up = 68.96 mV | |
T = −10 °C | Up = 4.40 mV | Up = 8.44 mV | Up = 14.96 mV | Up = 21.81 mV | Up = 28.12 mV | Up = 34.72 mV | Up = 41.00 mV | Up = 48.08 mV | Up = 54.89 mV | Up = 61.88 mV | Up = 66.71 mV | |
T = 0 °C | Up = 3.64 mV | Up = 7.73 mV | Up = 14.16 mV | Up = 20.71 mV | Up = 26.89 mV | Up = 33.35 mV | Up = 39.80 mV | Up = 46.20 mV | Up = 53.20 mV | Up = 60.22 mV | Up = 66.96 mV | |
T = 10 °C | Up = 2.29 mV | Up = 6.84 mV | Up = 13.85 mV | Up = 20.19 mV | Up = 26.16 mV | Up = 32.80 mV | Up = 38.96 mV | Up = 45.39 mV | Up = 52.21 mV | Up = 58.95 mV | Up = 65.81 mV | |
T = 20 °C | Up = 2.04 mV | Up = 6.56 mV | Up = 13.36 mV | Up = 19.84 mV | Up = 24.56 mV | Up = 32.33 mV | Up = 38.84 mV | Up = 45.12 mV | Up = 51.82 mV | Up = 58.60 mV | Up = 65.36 mV | |
T = 30 °C | Up = 1.28 mV | Up = 5.11 mV | Up = 11.11 mV | Up = 17.60 mV | Up = 23.80 mV | Up = 29.84 mV | Up = 36.40 mV | Up = 43.11 mV | Up = 49.84 mV | Up = 56.68 mV | Up = 63.80 mV | |
T = 40 °C | Up = 0.97 mV | Up = 3.20 mV | Up = 8.40 mV | Up = 14.84 mV | Up = 22.47 mV | Up = 28.36 mV | Up = 35.20 mV | Up = 40.38 mV | Up = 47.29 mV | Up = 53.48 mV | Up = 59.29 mV | |
T = 50 °C | Up = 0.44 mV | Up = 3.08 mV | Up = 8.00 mV | Up = 14.49 mV | Up = 21.00 mV | Up = 28.12 mV | Up = 33.75 mV | Up = 40.04 mV | Up = 47.09 mV | Up = 53.15 mV | Up = 59.00 mV |
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Zhang, J.; Zhao, Y.; Ge, Y.; Li, M.; Yang, L.; Mao, X. Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors. Micromachines 2016, 7, 187. https://doi.org/10.3390/mi7100187
Zhang J, Zhao Y, Ge Y, Li M, Yang L, Mao X. Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors. Micromachines. 2016; 7(10):187. https://doi.org/10.3390/mi7100187
Chicago/Turabian StyleZhang, Jiahong, Yang Zhao, Yixian Ge, Min Li, Lijuan Yang, and Xiaoli Mao. 2016. "Design Optimization and Fabrication of High-Sensitivity SOI Pressure Sensors with High Signal-to-Noise Ratios Based on Silicon Nanowire Piezoresistors" Micromachines 7, no. 10: 187. https://doi.org/10.3390/mi7100187