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Condensed Matter > Materials Science

arXiv:0804.1824 (cond-mat)
[Submitted on 11 Apr 2008 (v1), last revised 15 Apr 2008 (this version, v2)]

Title:Recrystallization of epitaxial GaN under indentation

Authors:S. Dhara, C. R. Das, H. C. Hsu, Baldev Raj, A. K. Bhaduri, L. C. Chen, K. H. Chen, S. K. Albert, Ayan Ray
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Abstract: We report recrystallization of epitaxial (epi-) GaN(0001) film under this http URL value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.
Comments: 10 pages, 3 figures,
Subjects: Materials Science (cond-mat.mtrl-sci); Other Condensed Matter (cond-mat.other)
Cite as: arXiv:0804.1824 [cond-mat.mtrl-sci]
  (or arXiv:0804.1824v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0804.1824
Journal reference: Appl. Phys. Lett. 92 (2008) 143114
Related DOI: https://doi.org/10.1063/1.2907851

Submission history

From: S. Dhara SKD [view email]
[v1] Fri, 11 Apr 2008 02:30:48 UTC (245 KB)
[v2] Tue, 15 Apr 2008 08:11:26 UTC (245 KB)
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