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Condensed Matter > Materials Science

arXiv:1906.09038 (cond-mat)
[Submitted on 21 Jun 2019 (v1), last revised 16 Oct 2019 (this version, v3)]

Title:Crystal Growth and basic transport and magnetic properties of MnBi2Te4

Authors:Poonam Rani (CSIR-NPL), Ankush Saxena (CSIR-NPL), Rabia Sultana (CSIR-NPL), Vipin Nagpal (JNU), S.S. Islam (Jamia Millia), S. Patnaik (JNU), V.P.S. Awana (CSIR-NPL)
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Abstract:We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. The heating schedule basically deals with growth of the crystal from melt at 900C and very slow cooling (1C/hr) to around 600C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated mainly by MnBi2Te4 and minor phases of Bi2Te3 and MnTe. The transport measurements showed a step like behavior at around 150K followed by cusp like structure in resistivity at around 25K (TP) due reported anti-ferromagnetic ordering of Mn. Both the resistivity transitions are seen clearly in dR/dT measurements at 150K and 20K respectively. The 25K transition of the compound is also seen in magnetic susceptibility. Low temperature (5K) magnetoresistance (MR) in applied field of up to 6 Tesla exhibited negative ve MR below 3 Tesla and +ve for higher fields. Also, seen are steps in MR below one Tesla. The studied MnBi2Te4 MTI crystal could be a possible candidate for Quantum Anomalous Hall (QAH) effect.
Comments: 14 Pages Text + Figs. Accepted Letter - J. Sup. & Novel Mag
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1906.09038 [cond-mat.mtrl-sci]
  (or arXiv:1906.09038v3 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1906.09038

Submission history

From: Veer Awana Dr [view email]
[v1] Fri, 21 Jun 2019 10:07:39 UTC (895 KB)
[v2] Tue, 9 Jul 2019 09:05:41 UTC (954 KB)
[v3] Wed, 16 Oct 2019 07:04:15 UTC (472 KB)
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