Gallium arsenide phosphide
Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.
Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrates to form a GaP/GaAsP heterostructure. In order to tune its electronic properties, it may be doped with nitrogen (GaAsP:N).[1]
See also
[edit]- Gallium arsenide
- Gallium indium arsenide antimonide phosphide
- Gallium phosphide
- Indium gallium arsenide phosphide
- Indium gallium phosphide
References
[edit]- ^ Tadashige Sato and Megumi Imai (2002). "Characteristics of Nitrogen-Doped GaAsP Light-Emitting Diodes". Japanese Journal of Applied Physics. 41 (10): 5995–5998. Bibcode:2002JaJAP..41.5995S. doi:10.1143/JJAP.41.5995. S2CID 119751060.
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