ABSTRACT By the use of binomial expansion theorem the analytical treatments for the current flow ... more ABSTRACT By the use of binomial expansion theorem the analytical treatments for the current flow due to tunneling of electron from the metal into the semiconductor are established. The obtained formulas can be useful in the analytical evaluation of the current density from the semiconductors to the metals. The method is general and easy for application. Numerical tests show that the obtained formulas provide higher accuracy and efficiency than the approximation methods in literature. The usefulness of the suggested method is confirmed by the concrete example.
International Semiconductor Device Research Symposium, 2003, 2003
The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate l... more The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate leakage current, and an AlGaN/GaN heterointerface that provides high density, high mobility two-dimensional electron gas channel. This article presents a comparative review of the I-V characteristics, cut-off frequencies, RF output powers, power gain, and nonlinear distortions of AlGaN/GaN MOSHFET, and HFET device. The MOSHFETs possess
ABSTRACT Despite a flurry of measurements of Newton's gravitational constant, G, that too... more ABSTRACT Despite a flurry of measurements of Newton's gravitational constant, G, that took place in the last decade, the relative standard uncertainty of the present CODATA value of G is 12 times larger than it was in the late eighties. Vargas and Torr have suggested that these discrepancies may be due to the influence of electric fields (Found. Phys. 29, 145, 1999) associated with the experiments. They predict measurable deformations of the spacetime structure (STS), i.e. gravitational forces, to be produced by inhomogeneous electromagnetic fields additional to those previously known. This effect, if present, is unlikely to have been serendipitously discovered. To test the possibility of affecting the local STS by nonuniform electromagnetic fields, we are investigating the weight force of test probes with a system having a weight resolution of 100ppb (A. Dimofte, M.S. thesis, USC 1999). Different field geometries and test mass compisition are tested. The apparatus and analysis are designed to sort out the electrostatic contributions from any possible gravito-electric effects. Further work to improve the quality and reproducibilty of the signal is in progress. The results from this work will be presented.
ABSTRACT The real-space transfer effect in a SiO2/AlGaN/GaN metal-oxide-semiconductor heterostruc... more ABSTRACT The real-space transfer effect in a SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C‐V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to two times compared to conventional Schottky-gate structures) can be achieved. The real-space charge transfer effect in MOSH structures also opens up a way to design novel devices such as variable capacitors, multistate switches, memory cells, etc.
ABSTRACT By the use of binomial expansion theorem the analytical treatments for the current flow ... more ABSTRACT By the use of binomial expansion theorem the analytical treatments for the current flow due to tunneling of electron from the metal into the semiconductor are established. The obtained formulas can be useful in the analytical evaluation of the current density from the semiconductors to the metals. The method is general and easy for application. Numerical tests show that the obtained formulas provide higher accuracy and efficiency than the approximation methods in literature. The usefulness of the suggested method is confirmed by the concrete example.
International Semiconductor Device Research Symposium, 2003, 2003
The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate l... more The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate leakage current, and an AlGaN/GaN heterointerface that provides high density, high mobility two-dimensional electron gas channel. This article presents a comparative review of the I-V characteristics, cut-off frequencies, RF output powers, power gain, and nonlinear distortions of AlGaN/GaN MOSHFET, and HFET device. The MOSHFETs possess
ABSTRACT Despite a flurry of measurements of Newton's gravitational constant, G, that too... more ABSTRACT Despite a flurry of measurements of Newton's gravitational constant, G, that took place in the last decade, the relative standard uncertainty of the present CODATA value of G is 12 times larger than it was in the late eighties. Vargas and Torr have suggested that these discrepancies may be due to the influence of electric fields (Found. Phys. 29, 145, 1999) associated with the experiments. They predict measurable deformations of the spacetime structure (STS), i.e. gravitational forces, to be produced by inhomogeneous electromagnetic fields additional to those previously known. This effect, if present, is unlikely to have been serendipitously discovered. To test the possibility of affecting the local STS by nonuniform electromagnetic fields, we are investigating the weight force of test probes with a system having a weight resolution of 100ppb (A. Dimofte, M.S. thesis, USC 1999). Different field geometries and test mass compisition are tested. The apparatus and analysis are designed to sort out the electrostatic contributions from any possible gravito-electric effects. Further work to improve the quality and reproducibilty of the signal is in progress. The results from this work will be presented.
ABSTRACT The real-space transfer effect in a SiO2/AlGaN/GaN metal-oxide-semiconductor heterostruc... more ABSTRACT The real-space transfer effect in a SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure (MOSH) from the two-dimensional (2D) electron gas at the heterointerface to the oxide-semiconductor interface has been demonstrated and explained. The effect occurs at high positive gate bias and manifests itself as an additional step in the capacitance-voltage (C‐V) characteristic. The real-space transfer effect limits the achievable maximum 2D electron gas density in the device channel. We show that in MOSH structures the maximum electron gas density exceeds up to two times that at the equilibrium (zero bias) condition. Correspondingly, a significant increase in the maximum channel current (up to two times compared to conventional Schottky-gate structures) can be achieved. The real-space charge transfer effect in MOSH structures also opens up a way to design novel devices such as variable capacitors, multistate switches, memory cells, etc.
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