ABSTRACT In this paper the void formation during electromigration is characterized with the singl... more ABSTRACT In this paper the void formation during electromigration is characterized with the single standard via (SSV) and the innovative local sense structure (LSS). LSS allows the measurement of small resistance change before the final void formation. This has allowed to define a time nucleation for the void. The SSV has been used to study: side effect in the first phase (i.e. the “plateau”), the time to failure (TTF) and the void growth. The comprehension of all these phenomena will be fundamental for the future of interconnects reliability physics and lifetime prediction.
IEEE International Interconnect Technology Conference, 2014
ABSTRACT In this paper the void formation during electromigration is characterized with the innov... more ABSTRACT In this paper the void formation during electromigration is characterized with the innovative Local Sense Structure (LSS) and with a standard single-via (SSV) electromigration test. LSS allows the measurement of small resistance change before final void formation, that have allowed to define a time of nucleation of the void (Tn). Furthermore, the classic structure has been used to evaluate the time to failure and to study in detail the “plateau” of void formation, where we suppose the void nucleates. The comprehension of nucleation and others phenomena before the classic jump of resistance will be fundamental for the future of interconnects reliability physics and lifetime prediction.
ABSTRACT In this paper the void formation during electromigration is characterized with the singl... more ABSTRACT In this paper the void formation during electromigration is characterized with the single standard via (SSV) and the innovative local sense structure (LSS). LSS allows the measurement of small resistance change before the final void formation. This has allowed to define a time nucleation for the void. The SSV has been used to study: side effect in the first phase (i.e. the “plateau”), the time to failure (TTF) and the void growth. The comprehension of all these phenomena will be fundamental for the future of interconnects reliability physics and lifetime prediction.
IEEE International Interconnect Technology Conference, 2014
ABSTRACT In this paper the void formation during electromigration is characterized with the innov... more ABSTRACT In this paper the void formation during electromigration is characterized with the innovative Local Sense Structure (LSS) and with a standard single-via (SSV) electromigration test. LSS allows the measurement of small resistance change before final void formation, that have allowed to define a time of nucleation of the void (Tn). Furthermore, the classic structure has been used to evaluate the time to failure and to study in detail the “plateau” of void formation, where we suppose the void nucleates. The comprehension of nucleation and others phenomena before the classic jump of resistance will be fundamental for the future of interconnects reliability physics and lifetime prediction.
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