Field-Effect Transistors (FET) form an established technology for sensing applications. However, ... more Field-Effect Transistors (FET) form an established technology for sensing applications. However, recent advancements and use of high-performance multi-gate MOSFETs (double-gate, FinFET, trigate, Gate-All-Around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suited device architectures for Sensing Integrated Circuits (SIC). In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon (Si) by a fully CMOS compatible approach, as an alternative to the widely investigated Silicon Nanowires (SiNW) on Silicon-On-Insulator (SOI) substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully-depleted FinFETs with critical dimensions of the order of 20 nm and HfO2 as high-k gate insulator have been developed and characterized showing excellent electrical properties, subthreshold swing, SS ~ 70 mV/dec, and, on-to-off current ratio, I...
ABSTRACT This work presents the technological development and characterization of n-channel fully... more ABSTRACT This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS = 72 mV/dec and high Ion/Ioff ≈ 106 ratio, with power consumption of the order of tens of nW. The FinFETs have also been proved to correctly behave in a liquid environment. We also present the HfO2 characterization towards full pH response sensing applications.
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings, 1997
In situ electrical characterization is extremely important for SOI wafer fabrication because it a... more In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the
ABSTRACT High density (7–10 NW/lm) SiNW arrays of up to 16 nanowires vertically stacked with diam... more ABSTRACT High density (7–10 NW/lm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased sensing surface area that nanoscale 3D devices offer and improve the mechanical characteristics of the suspended sensing channels, fin-type structures (height/ width ratio >1) are also being investigated. The vertical stacking allows higher utilization of the bulk Si. Higher output currents are expected as the number of conduction channels increases. 3D TCAD simulations have been done for up to three channels to investigate different device characteristics to achieve high sensitivities. Both NWs and Fins have been found to offer very high sensitivities through simulations especially for short (2 lm) channels, low channel doping concentrations (boron: 1015 cm�3), and thin structures (width <30 nm) when applying an external sensing gate potential variation of DW= 90 mV.
Field-Effect Transistors (FET) form an established technology for sensing applications. However, ... more Field-Effect Transistors (FET) form an established technology for sensing applications. However, recent advancements and use of high-performance multi-gate MOSFETs (double-gate, FinFET, trigate, Gate-All-Around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suited device architectures for Sensing Integrated Circuits (SIC). In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon (Si) by a fully CMOS compatible approach, as an alternative to the widely investigated Silicon Nanowires (SiNW) on Silicon-On-Insulator (SOI) substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully-depleted FinFETs with critical dimensions of the order of 20 nm and HfO2 as high-k gate insulator have been developed and characterized showing excellent electrical properties, subthreshold swing, SS ~ 70 mV/dec, and, on-to-off current ratio, I...
We report a case of atraumatic gas gangrene and myonecrosis of the leg secondary to infection wit... more We report a case of atraumatic gas gangrene and myonecrosis of the leg secondary to infection with Clostridium septicum in a severely obese patient with an occult cancer. She was treated successfully for both conditions. A review of the current literature describes this constellation of findings and the appropriate treatment.:
We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors... more We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.
ABSTRACT This work presents an advanced electronic device, a high-k dielectric FinFET (Fin Field ... more ABSTRACT This work presents an advanced electronic device, a high-k dielectric FinFET (Fin Field Effect Transistor), as new label-free sensor for enhanced sensing integrated circuits. FinFET-based sensors are demonstrated pH sensitive with high current variation per pH unit and significant considerations on the operation regime are carried out. Metal gate n-channel FinFETs, designed with the same architecture, are integrated and characterized together with the sensors, showing excellent transistor properties. All devices investigated in this paper are fabricated on bulk-silicon wafers with Fin width between 40 and 20 nm.
In this paper we report the fabrication and detailed electrical characterization of a novel test ... more In this paper we report the fabrication and detailed electrical characterization of a novel test structure based on Metal–Ferroelectric-Metal–Oxide–Semiconductor transistor with internal metal contact, aiming at extracting the surface potential and the investigation of internal voltage. This structure could possibly be used for the investigation of the differential voltage amplification expected due to negative capacitance effect. The proposed test structure
ABSTRACT Low power n-channel fully depleted local-SOI FinFET integrated sensors have been develop... more ABSTRACT Low power n-channel fully depleted local-SOI FinFET integrated sensors have been developed and validated for the amplification of pH sensing signals. A simple architecture with one FinFET connected as depletion-mode load and another one as driving sensor, provides a maximum readout gain of 6.6 V/V with a maximum pH readout sensitivity of 185 mV/pH, at 2 V operation. By comparing the proposed amplifier with a single sensing FinFET the threshold voltage shift readout is shown to be 4.4 times larger. High-k dielectric HfO2 has been used to maximize both sensing and electronic performances. The FinFETs have been fabricated on bulk silicon by a local-SOI technique. FinFET thickness (TFin) and height (HFin) achieved are in the range of 20 nm ≤ T Fin ≤ 40 nm and 65 nm ≤ HFin ≤ 120 nm.
This paper presents new results on miniaturized pentacene thin film transistors (TFTs) fabricated... more This paper presents new results on miniaturized pentacene thin film transistors (TFTs) fabricated on a spin coated polyimide (PI) film. Patterning steps, which are vital for the integrity and electrical performance of organic TFTs, were done using resistless shadow-mask lithography with two high precision MEMS fabricated stencils, thus avoiding solvents and high temperature processes. Both pentacene and source–drain (S/D) electrodes
Solid-State Device Research European Conference, 2009
In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on... more In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well-controlled device processing. The positive impact of the top gate voltage control on reducing the leakage current and significantly improving the subthreshold swing of the device
Field-Effect Transistors (FET) form an established technology for sensing applications. However, ... more Field-Effect Transistors (FET) form an established technology for sensing applications. However, recent advancements and use of high-performance multi-gate MOSFETs (double-gate, FinFET, trigate, Gate-All-Around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suited device architectures for Sensing Integrated Circuits (SIC). In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon (Si) by a fully CMOS compatible approach, as an alternative to the widely investigated Silicon Nanowires (SiNW) on Silicon-On-Insulator (SOI) substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully-depleted FinFETs with critical dimensions of the order of 20 nm and HfO2 as high-k gate insulator have been developed and characterized showing excellent electrical properties, subthreshold swing, SS ~ 70 mV/dec, and, on-to-off current ratio, I...
ABSTRACT This work presents the technological development and characterization of n-channel fully... more ABSTRACT This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Element Analysis for a high-control fabrication process of vertical Si-fins on bulk and we provide many useful fabrication expedients. Metal gate FinFETs have been successfully electrically characterized, showing excellent subthreshold slope SS = 72 mV/dec and high Ion/Ioff ≈ 106 ratio, with power consumption of the order of tens of nW. The FinFETs have also been proved to correctly behave in a liquid environment. We also present the HfO2 characterization towards full pH response sensing applications.
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings, 1997
In situ electrical characterization is extremely important for SOI wafer fabrication because it a... more In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the
ABSTRACT High density (7–10 NW/lm) SiNW arrays of up to 16 nanowires vertically stacked with diam... more ABSTRACT High density (7–10 NW/lm) SiNW arrays of up to 16 nanowires vertically stacked with diameter widths below 20 nm have been successfully fabricated to create highly sensitive 3D FETs for biosensing applications. In order to take advantage of the increased sensing surface area that nanoscale 3D devices offer and improve the mechanical characteristics of the suspended sensing channels, fin-type structures (height/ width ratio >1) are also being investigated. The vertical stacking allows higher utilization of the bulk Si. Higher output currents are expected as the number of conduction channels increases. 3D TCAD simulations have been done for up to three channels to investigate different device characteristics to achieve high sensitivities. Both NWs and Fins have been found to offer very high sensitivities through simulations especially for short (2 lm) channels, low channel doping concentrations (boron: 1015 cm�3), and thin structures (width <30 nm) when applying an external sensing gate potential variation of DW= 90 mV.
Field-Effect Transistors (FET) form an established technology for sensing applications. However, ... more Field-Effect Transistors (FET) form an established technology for sensing applications. However, recent advancements and use of high-performance multi-gate MOSFETs (double-gate, FinFET, trigate, Gate-All-Around) in computing technology, instead of bulk MOSFETs, raise new opportunities and questions about the most suited device architectures for Sensing Integrated Circuits (SIC). In this work, we propose pH and ion sensors exploiting FinFETs fabricated on bulk silicon (Si) by a fully CMOS compatible approach, as an alternative to the widely investigated Silicon Nanowires (SiNW) on Silicon-On-Insulator (SOI) substrates. We also provide an analytical insight of the concept of sensitivity for the electronic integration of sensors. N-channel fully-depleted FinFETs with critical dimensions of the order of 20 nm and HfO2 as high-k gate insulator have been developed and characterized showing excellent electrical properties, subthreshold swing, SS ~ 70 mV/dec, and, on-to-off current ratio, I...
We report a case of atraumatic gas gangrene and myonecrosis of the leg secondary to infection wit... more We report a case of atraumatic gas gangrene and myonecrosis of the leg secondary to infection with Clostridium septicum in a severely obese patient with an occult cancer. She was treated successfully for both conditions. A review of the current literature describes this constellation of findings and the appropriate treatment.:
We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors... more We report wafer-level fabrication of resonant-body carbon nanotube (CNT) field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.
ABSTRACT This work presents an advanced electronic device, a high-k dielectric FinFET (Fin Field ... more ABSTRACT This work presents an advanced electronic device, a high-k dielectric FinFET (Fin Field Effect Transistor), as new label-free sensor for enhanced sensing integrated circuits. FinFET-based sensors are demonstrated pH sensitive with high current variation per pH unit and significant considerations on the operation regime are carried out. Metal gate n-channel FinFETs, designed with the same architecture, are integrated and characterized together with the sensors, showing excellent transistor properties. All devices investigated in this paper are fabricated on bulk-silicon wafers with Fin width between 40 and 20 nm.
In this paper we report the fabrication and detailed electrical characterization of a novel test ... more In this paper we report the fabrication and detailed electrical characterization of a novel test structure based on Metal–Ferroelectric-Metal–Oxide–Semiconductor transistor with internal metal contact, aiming at extracting the surface potential and the investigation of internal voltage. This structure could possibly be used for the investigation of the differential voltage amplification expected due to negative capacitance effect. The proposed test structure
ABSTRACT Low power n-channel fully depleted local-SOI FinFET integrated sensors have been develop... more ABSTRACT Low power n-channel fully depleted local-SOI FinFET integrated sensors have been developed and validated for the amplification of pH sensing signals. A simple architecture with one FinFET connected as depletion-mode load and another one as driving sensor, provides a maximum readout gain of 6.6 V/V with a maximum pH readout sensitivity of 185 mV/pH, at 2 V operation. By comparing the proposed amplifier with a single sensing FinFET the threshold voltage shift readout is shown to be 4.4 times larger. High-k dielectric HfO2 has been used to maximize both sensing and electronic performances. The FinFETs have been fabricated on bulk silicon by a local-SOI technique. FinFET thickness (TFin) and height (HFin) achieved are in the range of 20 nm ≤ T Fin ≤ 40 nm and 65 nm ≤ HFin ≤ 120 nm.
This paper presents new results on miniaturized pentacene thin film transistors (TFTs) fabricated... more This paper presents new results on miniaturized pentacene thin film transistors (TFTs) fabricated on a spin coated polyimide (PI) film. Patterning steps, which are vital for the integrity and electrical performance of organic TFTs, were done using resistless shadow-mask lithography with two high precision MEMS fabricated stencils, thus avoiding solvents and high temperature processes. Both pentacene and source–drain (S/D) electrodes
Solid-State Device Research European Conference, 2009
In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on... more In this work a double-gate pentacene TFT architecture is presented. The devices are fabricated on a polyimide substrate using three aligned levels of stencil lithography along with standard photolithography, which enable a soft yet well-controlled device processing. The positive impact of the top gate voltage control on reducing the leakage current and significantly improving the subthreshold swing of the device
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