Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012
... the Smart Cut™ technology is nowadays well known to allow transferring ultra-thin single crys... more ... the Smart Cut™ technology is nowadays well known to allow transferring ultra-thin single crystal ... Then the splitting is induced in the weakened layer which allows transferring a thin film. ... performed through a combination of “2 beam” and “off Bragg, strongly defocused” imaging. ...
2005 IEEE International SOI Conference Proceedings, 2005
We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting ... more We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting device characteristics. Pseudo-MOS measurements were done at Soitec, and Ge MOSFET fabrication was done at LETI and IMEC from epitaxial and bulk Ge starting materials, respectively.
In this paper, we propose a novel approach for HBAR devices using the Smart Cut ™ technology to o... more In this paper, we propose a novel approach for HBAR devices using the Smart Cut ™ technology to obtain thin homogeneous X-cut single crystal films of LiNbO 3 . Sub-micron layers were successfully transferred onto LiNbO 3 handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut ™ to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper.
2008 IEEE International Electron Devices Meeting, 2008
For the first time, high overtone bulk acoustic resonators (HBAR) based on thin homogeneous and s... more For the first time, high overtone bulk acoustic resonators (HBAR) based on thin homogeneous and single crystalline films (below 1mum) of lithium niobate (LiNbO3) have been processed and characterized between 1 and 4 GHz. kt 2 greater than 30% are extracted from the frequency response envelope, by far superior to kt 2 usually obtained with traditional deposited AlN material (limited
invented and patented the Smart Cut™ technology to fabricate Silicon On Insulator (SOI) substrate... more invented and patented the Smart Cut™ technology to fabricate Silicon On Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal layer from one wafer to another: implantation of gaseous ions in a single crystal wafer, direct bonding on a stiffener and splitting . The invention of this SOI process combined with the entrepreneurship of SOITEC paved the way to high quality SOI substrates mass production. Today, SOI is a mature product (up to 300mm diameter) and now developments are focused on the integration of new materials and functionalities in order to improve device performances and enlarge the application spectrum.
2010 IEEE International Frequency Control Symposium, 2010
ABSTRACT As layer transfer techniques have been notably improved these passed years, lithium niob... more ABSTRACT As layer transfer techniques have been notably improved these passed years, lithium niobate (LiNbO3) appears as a candidate for the next generation of ultra wide band Radio Frequency (RF) filters. Depending on the crystalline orientation, LiNbO3 can achieve electromechanical coupling factors Kt2 more than 6 times larger than those of sputtered aluminium nitride films. In this paper, a process based on direct bonding, grinding, polishing and Deep Reactive Ion Etching (DRIE) is proposed to fabricate a single crystal LiNbO3 Film Bulk Acoustic Resonator (FBAR). From the fabricated test vehicles Kt2 of 45% is measured confirming the values predicted by theoretical computations.
We report on the fabrication and electrical characterization of deep sub-micron (gate length down... more We report on the fabrication and electrical characterization of deep sub-micron (gate length down to 105nm) GeOI pMOSFETs. The Ge layer obtained by hetero-epitaxy on Si wafers has been transferred using the Smart CutTM process to fabricate 200mm GeOI wafers with Ge thickness down to 60–80nm. A full Si MOS compatible pMOSFET process was implemented with HfO2/TiN gate stack. The electrical characterization of the fabricated devices and the systematic analysis of the measured performances (ION, IOFF, transconductance, low field mobility, S, DIBL) demonstrate the potential of pMOSFET on GeOI for advanced technological nodes. The dependence of these parameters have been analyzed with respect to the gate length, showing very good transport properties (μh∼250cm2/V/s, ION=436μA/μm for LG=105nm), and OFF current densities comparable or better than those reported in the literature.
As layer transfer techniques have been notably improved in the past years, lithium niobate (LiNbO... more As layer transfer techniques have been notably improved in the past years, lithium niobate (LiNbO3) appears as a candidate for the next generation of ultrawide band radio frequency (rf) filters. Depending on the crystalline orientation, LiNbO3 can achieve electromechanical coupling factors Kt2 more than six times larger than those of sputtered aluminum nitride films. In this letter, a process based on direct bonding, grinding, polishing, and deep reactive ion etching is proposed to fabricate a single crystal LiNbO3 film bulk acoustic resonator. From the fabricated test vehicles, Kt2 of 43% is measured confirming the values predicted by theoretical computations.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012
... the Smart Cut™ technology is nowadays well known to allow transferring ultra-thin single crys... more ... the Smart Cut™ technology is nowadays well known to allow transferring ultra-thin single crystal ... Then the splitting is induced in the weakened layer which allows transferring a thin film. ... performed through a combination of “2 beam” and “off Bragg, strongly defocused” imaging. ...
2005 IEEE International SOI Conference Proceedings, 2005
We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting ... more We present our recent achievements on 200mm GeOI formation from bulk Ge wafers and the resulting device characteristics. Pseudo-MOS measurements were done at Soitec, and Ge MOSFET fabrication was done at LETI and IMEC from epitaxial and bulk Ge starting materials, respectively.
In this paper, we propose a novel approach for HBAR devices using the Smart Cut ™ technology to o... more In this paper, we propose a novel approach for HBAR devices using the Smart Cut ™ technology to obtain thin homogeneous X-cut single crystal films of LiNbO 3 . Sub-micron layers were successfully transferred onto LiNbO 3 handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut ™ to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper.
2008 IEEE International Electron Devices Meeting, 2008
For the first time, high overtone bulk acoustic resonators (HBAR) based on thin homogeneous and s... more For the first time, high overtone bulk acoustic resonators (HBAR) based on thin homogeneous and single crystalline films (below 1mum) of lithium niobate (LiNbO3) have been processed and characterized between 1 and 4 GHz. kt 2 greater than 30% are extracted from the frequency response envelope, by far superior to kt 2 usually obtained with traditional deposited AlN material (limited
invented and patented the Smart Cut™ technology to fabricate Silicon On Insulator (SOI) substrate... more invented and patented the Smart Cut™ technology to fabricate Silicon On Insulator (SOI) substrates. The process relies on the transfer of a high quality single crystal layer from one wafer to another: implantation of gaseous ions in a single crystal wafer, direct bonding on a stiffener and splitting . The invention of this SOI process combined with the entrepreneurship of SOITEC paved the way to high quality SOI substrates mass production. Today, SOI is a mature product (up to 300mm diameter) and now developments are focused on the integration of new materials and functionalities in order to improve device performances and enlarge the application spectrum.
2010 IEEE International Frequency Control Symposium, 2010
ABSTRACT As layer transfer techniques have been notably improved these passed years, lithium niob... more ABSTRACT As layer transfer techniques have been notably improved these passed years, lithium niobate (LiNbO3) appears as a candidate for the next generation of ultra wide band Radio Frequency (RF) filters. Depending on the crystalline orientation, LiNbO3 can achieve electromechanical coupling factors Kt2 more than 6 times larger than those of sputtered aluminium nitride films. In this paper, a process based on direct bonding, grinding, polishing and Deep Reactive Ion Etching (DRIE) is proposed to fabricate a single crystal LiNbO3 Film Bulk Acoustic Resonator (FBAR). From the fabricated test vehicles Kt2 of 45% is measured confirming the values predicted by theoretical computations.
We report on the fabrication and electrical characterization of deep sub-micron (gate length down... more We report on the fabrication and electrical characterization of deep sub-micron (gate length down to 105nm) GeOI pMOSFETs. The Ge layer obtained by hetero-epitaxy on Si wafers has been transferred using the Smart CutTM process to fabricate 200mm GeOI wafers with Ge thickness down to 60–80nm. A full Si MOS compatible pMOSFET process was implemented with HfO2/TiN gate stack. The electrical characterization of the fabricated devices and the systematic analysis of the measured performances (ION, IOFF, transconductance, low field mobility, S, DIBL) demonstrate the potential of pMOSFET on GeOI for advanced technological nodes. The dependence of these parameters have been analyzed with respect to the gate length, showing very good transport properties (μh∼250cm2/V/s, ION=436μA/μm for LG=105nm), and OFF current densities comparable or better than those reported in the literature.
As layer transfer techniques have been notably improved in the past years, lithium niobate (LiNbO... more As layer transfer techniques have been notably improved in the past years, lithium niobate (LiNbO3) appears as a candidate for the next generation of ultrawide band radio frequency (rf) filters. Depending on the crystalline orientation, LiNbO3 can achieve electromechanical coupling factors Kt2 more than six times larger than those of sputtered aluminum nitride films. In this letter, a process based on direct bonding, grinding, polishing, and deep reactive ion etching is proposed to fabricate a single crystal LiNbO3 film bulk acoustic resonator. From the fabricated test vehicles, Kt2 of 43% is measured confirming the values predicted by theoretical computations.
Uploads
Papers by C. Deguet