Alevli, M., Ozgit, C., Donmez, I. and Biyikli, N.(2011), Structural properties of AlN films depos... more Alevli, M., Ozgit, C., Donmez, I. and Biyikli, N.(2011), Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures. physica status solidi (a). doi: 10.1002/pssa. 201127430
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by ... more The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied. The ϖ-2Θ grazing-incidence X-ray diffraction, high resolution transmission electron microscopy, and spectroscopic ellipsometry results on AlN films grown using either NH3 or N2/H2 plasma revealed polycrystalline and wurtzite AlN layers. The AlN growth rate per cycle was decreased from 0.84 to 0.54 Å/cycle when the N source was changed from NH3 to N2/H2. Growth rate of AlN remained constant within 100–200 °C for both N precursors, confirming the self-limiting growth mode in the ALD window. Al–Al bond was detected only near the surface in the AlN film grown with NH3 plasma. AFM analysis showed that the RMS roughness values for AlN films grown on Si(100) substrates using NH3 and N2/H2 plasma sources were 1.33 nm and 1.18 nm, respectively. The refractive indices of both AlN films are similar except for a slight difference in the optical band edge and position of optical phonon modes. The optical band edges of the grown AlN films are observed at 5.83 and 5.92 eV for ammonia and N2/H2 plasma, respectively. According to the FTIR data for both AlN films on sapphire substrates, the E1(TO) phonon mode position shifted from 671 cm−1 to 675 cm−1 when the plasma source was changed from NH3 to N2/H2.► Self-limited true ALD growth of AlN films within 100–200 C is reported. ► Saturated chemisorption reactions betweenTMA and NH3 or N2/H2 precursors are achieved. ► The ALD temperature window remained the same for both group-V source materials (NH3 and N2/H2). ► Optical properties of both AlN films were similar except for a slight difference in the optical band edge and optical phonon positions. ► Al–Al bond was detected near the surface of AlN(NH3) samples, whereas AlN(N2/H2) films exhibited Al–N bond only.
Alevli, M., Ozgit, C., Donmez, I. and Biyikli, N.(2011), Structural properties of AlN films depos... more Alevli, M., Ozgit, C., Donmez, I. and Biyikli, N.(2011), Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures. physica status solidi (a). doi: 10.1002/pssa. 201127430
The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by ... more The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied. The ϖ-2Θ grazing-incidence X-ray diffraction, high resolution transmission electron microscopy, and spectroscopic ellipsometry results on AlN films grown using either NH3 or N2/H2 plasma revealed polycrystalline and wurtzite AlN layers. The AlN growth rate per cycle was decreased from 0.84 to 0.54 Å/cycle when the N source was changed from NH3 to N2/H2. Growth rate of AlN remained constant within 100–200 °C for both N precursors, confirming the self-limiting growth mode in the ALD window. Al–Al bond was detected only near the surface in the AlN film grown with NH3 plasma. AFM analysis showed that the RMS roughness values for AlN films grown on Si(100) substrates using NH3 and N2/H2 plasma sources were 1.33 nm and 1.18 nm, respectively. The refractive indices of both AlN films are similar except for a slight difference in the optical band edge and position of optical phonon modes. The optical band edges of the grown AlN films are observed at 5.83 and 5.92 eV for ammonia and N2/H2 plasma, respectively. According to the FTIR data for both AlN films on sapphire substrates, the E1(TO) phonon mode position shifted from 671 cm−1 to 675 cm−1 when the plasma source was changed from NH3 to N2/H2.► Self-limited true ALD growth of AlN films within 100–200 C is reported. ► Saturated chemisorption reactions betweenTMA and NH3 or N2/H2 precursors are achieved. ► The ALD temperature window remained the same for both group-V source materials (NH3 and N2/H2). ► Optical properties of both AlN films were similar except for a slight difference in the optical band edge and optical phonon positions. ► Al–Al bond was detected near the surface of AlN(NH3) samples, whereas AlN(N2/H2) films exhibited Al–N bond only.
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