We have focused on mixed halide perovskite thin films of the formula CsPbX3 where (X3 = Br3, Cl3,... more We have focused on mixed halide perovskite thin films of the formula CsPbX3 where (X3 = Br3, Cl3, I3, Br2Cl, Br2I, and I2Cl) prepared by spin-coating in order to study the effects of partial and total Br substitution. For this purpose, we performed a series of characterizations, including x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV–visible spectroscopy. All the films except CsPbI2Br showed two characteristic peaks at 2θ angles of 26.80° and 51.80° corresponding to the (111) and (220) crystallographic planes. In the case of CsPbI2Br, we have the same peaks, but the main ones are located at 15° and 30° for the (100) and (200) planes, respectively. SEM examined the surface morphology of the different mixed lead halide films; the best surface was that of the CsPbBr2I sample, which is well-coated, dense, with no pinholes and no cracks, and has the largest grain size. In addition, all the mixed halide films showed good absorbance, especiall...
An increased attention is devoted to interfacial In2S3 thin films because of their potential appl... more An increased attention is devoted to interfacial In2S3 thin films because of their potential application as a new generation of buffer layer in copper indium gallium diselenide (CIGS)-based solar cells. In this paper, thin films of β-In2S3 were deposited by Chemical Spray Pyrolysis and Electrochemical deposition onto FTO Coated Glass Substrates. Characterization of the films was carried out by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS). Optical analysis to determine band gap gives band gap varying from 2.45eV to 2.90 eV which are very close to the accepted values. The structural analysis reveals films with (0 0 12) as main peak for all samples in all case.
We have focused on mixed halide perovskite thin films of the formula CsPbX3 where (X3 = Br3, Cl3,... more We have focused on mixed halide perovskite thin films of the formula CsPbX3 where (X3 = Br3, Cl3, I3, Br2Cl, Br2I, and I2Cl) prepared by spin-coating in order to study the effects of partial and total Br substitution. For this purpose, we performed a series of characterizations, including x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV–visible spectroscopy. All the films except CsPbI2Br showed two characteristic peaks at 2θ angles of 26.80° and 51.80° corresponding to the (111) and (220) crystallographic planes. In the case of CsPbI2Br, we have the same peaks, but the main ones are located at 15° and 30° for the (100) and (200) planes, respectively. SEM examined the surface morphology of the different mixed lead halide films; the best surface was that of the CsPbBr2I sample, which is well-coated, dense, with no pinholes and no cracks, and has the largest grain size. In addition, all the mixed halide films showed good absorbance, especiall...
An increased attention is devoted to interfacial In2S3 thin films because of their potential appl... more An increased attention is devoted to interfacial In2S3 thin films because of their potential application as a new generation of buffer layer in copper indium gallium diselenide (CIGS)-based solar cells. In this paper, thin films of β-In2S3 were deposited by Chemical Spray Pyrolysis and Electrochemical deposition onto FTO Coated Glass Substrates. Characterization of the films was carried out by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS). Optical analysis to determine band gap gives band gap varying from 2.45eV to 2.90 eV which are very close to the accepted values. The structural analysis reveals films with (0 0 12) as main peak for all samples in all case.
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Papers by Donafologo Soro
Key words : Indium sulfide, Buffer Layer, electrodeposition ,Spray Pyrolysis, DMSO,FTO.
Key words : Indium sulfide, Buffer Layer, electrodeposition ,Spray Pyrolysis, DMSO,FTO.