I'm a scientist, inventor and businessman with businesses and a non-profit entity (Soverign Energy) in new energy conversion and storage (Antropy Technology) based on discovery, inventions and patents for production and sale of vacuum thin film apparatus, process, materials and devices (DemarayLLC).
A sputtered silicon thin film deposited on unannealed 1737 glass has been shown to transform to p... more A sputtered silicon thin film deposited on unannealed 1737 glass has been shown to transform to polysilicon at low energy density and below the full‐melt threshold. The resulting polysilicon shows promise to enable high‐yield manufacturing of highly‐integrated, large‐area LTPS displays. Materials properties and their implications are presented.
JW Fairbanks, E Demaray, I Kvernes Martinus Nijhoff Publishers,, 524-542, 1984. ... plasma spraye... more JW Fairbanks, E Demaray, I Kvernes Martinus Nijhoff Publishers,, 524-542, 1984. ... plasma sprayed zirconia for diesel engine combustion chamber components developed in Norway and the columnar structure zirconia coating developed at Airco-Temescal and Pratt & Whitney. ...
Based on scaling trends observed with a model for global interconnect pitch, a new paradigm is in... more Based on scaling trends observed with a model for global interconnect pitch, a new paradigm is introduced for ASICs in which power and ground planes separated by a high k dielectric are placed on-chip. This gives a 4times reduction in on-chip IR drop, reduces di/dt noise due to package inductance by 2.6times without using any transistor area for decoupling capacitors (decaps), improves clock wire latency by 5%, reduces delay of global signal wires by 23% and decreases energy per bit for global signal wires by 22%. Thus, global interconnect problems could be substantially alleviated
Author Institution:The complete and exact calculation of the observable polarization of alkali d-... more Author Institution:The complete and exact calculation of the observable polarization of alkali d-line emission, in the case of axial–recoil excitation, is presented and discussed. First, the formalism developed allows the differentiation of different symmetries and different angular momentum coupling schemes for the quasimolecular parent state. Second, the theory of Percival and Seaton is adapted to allow the computation of the effect of hyperfine precessional dephasing of the initial atomic state on the Zeeman Radiation Pattern of the final emission. Third, from scattering experiments performed in our laboratory we are able for the first time to introduce the effect of the distrubution of axes of quantization for the particular case of the excitation of rubidium in crossed beams with $N_{2}$. The dipole radiation distribution and natural isotope abudance effects are included in the final polorization fraction. The exact results are tabulated for sample calculations; nuclear spin I=3/2 (Na, K, Rb) and I=5/2 (Rb). And the second order nuclear quadrupole effects are demonstrated to be of less importance than accurate values of the relative lifetimes. Polarizations computed with this method are compared with recent measurements and calculations for rare gas alkali-ion scattering emission. The method is also used to discuss recently measured anisotropies in resonance enhanced photoionization electron distributions and photo-dissociation hot atom recoil
Journal of Korean Vacuum Science & Technology, Oct 1, 1999
The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metalliz... more The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metallization is the high sheet resistance (R_s) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to be considered full target erosion and high film uniformity. After an aluminum-2 at.% Nd alloy target was installed in a magnetron source and the film was deposited on the glass of 600×700 ㎜, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4 mtorr and 10 ㎾, the magnet tilt for the high R_s uniformity of 8.38% was 7 ㎜. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.
Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displ... more Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.
Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displ... more Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.
L'invention concerne un procede pour deposer un film conducteur transparent sur une cible met... more L'invention concerne un procede pour deposer un film conducteur transparent sur une cible metallique. Un procede pour former un film d'oxyde conducteur transparent selon de modes realisation de l'invention comprend le depot du film d'oxyde conducteur transparent dans un processus d'ions reacteurs a courant alternatif pulse, au moyen de polarisations de substrats, et la commande d'au moins un parametre de processus permettant d'avoir un effet sur au moins une caracteristique du film d'oxyde conducteur. Le film d'oxyde transparent ainsi obtenu, qui peut etre, dans certains modes de realisation, un film d'oxyde d'etain et d'indium, peut presenter une large gamme de proprietes materielles dependant des variations des parametres de processus. Par exemple, la variation des parametres de processus peut produire un film comprenant une large gamme de proprietes resistantes et une souplesse de surface du film.
L'invention concerne une couche barriere dielectrique. Ladite couche barriere comprend une co... more L'invention concerne une couche barriere dielectrique. Ladite couche barriere comprend une couche dielectrique amorphe densifiee deposee sur un substrat par un par depot par evaporation sous vide physique, a substrat polarise a courant continu pulse, la couche dielectrique amorphe densifiee etant une couche barriere. L'invention concerne egalement un procede de formation d'une couche barriere comprenant la production d'un substrat et le depot de matiere dielectrique, amorphe, densifiee sur le substrat, dans un processus de depot par evaporation sous vide physique a cible large, polarise, a courant continu pulse. De plus, le processus peut comprendre la realisation d'un traitement permeable a l'air de metal leger. Lesdites couches barrieres peuvent etre utilisees comme des couches electriques, des couches optiques, des couches immunologiques, ou des couches tribologiques.
ABSTRACTWe studied physical properties of titanium hafnium oxide (TixHf1-xO2) alloy thin films de... more ABSTRACTWe studied physical properties of titanium hafnium oxide (TixHf1-xO2) alloy thin films deposited by pulsed DC reactive magnetron sputtering with AC substrate bias. Thin films of two end oxides, hafnium oxides (HfO2) and titanium oxides (TiO2), and their alloys TixHf1-xO2 with a range of compositions deposited with and without the substrate bias were compared to study the dependence of physical properties of the thin films on the substrate bias. Structural, chemical and optical properties of the thin films were analyzed to assess inter-relationship among these properties. Thin films deposited with the AC substrate bias consistently show much higher refractive index and significantly lower optical extinction coefficient than those of thin films deposited without the substrate bias suggesting that characteristic microstructures developed in these thin films are responsible for the differences in the optical properties.
Journal of Korean Vacuum Science & Technology, 1999
The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metalliz... more The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metallization is the high sheet resistance (R_s) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to be considered full target erosion and high film uniformity. After an aluminum-2 at.% Nd alloy target was installed in a magnetron source and the film was deposited on the glass of 600×700 ㎜, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4 mtorr and 10 ㎾, the magnet tilt for the high R_s uniformity of 8.38% was 7 ㎜. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.
A sputtered silicon thin film deposited on unannealed 1737 glass has been shown to transform to p... more A sputtered silicon thin film deposited on unannealed 1737 glass has been shown to transform to polysilicon at low energy density and below the full‐melt threshold. The resulting polysilicon shows promise to enable high‐yield manufacturing of highly‐integrated, large‐area LTPS displays. Materials properties and their implications are presented.
JW Fairbanks, E Demaray, I Kvernes Martinus Nijhoff Publishers,, 524-542, 1984. ... plasma spraye... more JW Fairbanks, E Demaray, I Kvernes Martinus Nijhoff Publishers,, 524-542, 1984. ... plasma sprayed zirconia for diesel engine combustion chamber components developed in Norway and the columnar structure zirconia coating developed at Airco-Temescal and Pratt & Whitney. ...
Based on scaling trends observed with a model for global interconnect pitch, a new paradigm is in... more Based on scaling trends observed with a model for global interconnect pitch, a new paradigm is introduced for ASICs in which power and ground planes separated by a high k dielectric are placed on-chip. This gives a 4times reduction in on-chip IR drop, reduces di/dt noise due to package inductance by 2.6times without using any transistor area for decoupling capacitors (decaps), improves clock wire latency by 5%, reduces delay of global signal wires by 23% and decreases energy per bit for global signal wires by 22%. Thus, global interconnect problems could be substantially alleviated
Author Institution:The complete and exact calculation of the observable polarization of alkali d-... more Author Institution:The complete and exact calculation of the observable polarization of alkali d-line emission, in the case of axial–recoil excitation, is presented and discussed. First, the formalism developed allows the differentiation of different symmetries and different angular momentum coupling schemes for the quasimolecular parent state. Second, the theory of Percival and Seaton is adapted to allow the computation of the effect of hyperfine precessional dephasing of the initial atomic state on the Zeeman Radiation Pattern of the final emission. Third, from scattering experiments performed in our laboratory we are able for the first time to introduce the effect of the distrubution of axes of quantization for the particular case of the excitation of rubidium in crossed beams with $N_{2}$. The dipole radiation distribution and natural isotope abudance effects are included in the final polorization fraction. The exact results are tabulated for sample calculations; nuclear spin I=3/2 (Na, K, Rb) and I=5/2 (Rb). And the second order nuclear quadrupole effects are demonstrated to be of less importance than accurate values of the relative lifetimes. Polarizations computed with this method are compared with recent measurements and calculations for rare gas alkali-ion scattering emission. The method is also used to discuss recently measured anisotropies in resonance enhanced photoionization electron distributions and photo-dissociation hot atom recoil
Journal of Korean Vacuum Science & Technology, Oct 1, 1999
The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metalliz... more The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metallization is the high sheet resistance (R_s) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to be considered full target erosion and high film uniformity. After an aluminum-2 at.% Nd alloy target was installed in a magnetron source and the film was deposited on the glass of 600×700 ㎜, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4 mtorr and 10 ㎾, the magnet tilt for the high R_s uniformity of 8.38% was 7 ㎜. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.
Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displ... more Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.
Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displ... more Large grain poly-Silicon (p-Si) films have been evaluated for high speed TFT for flat panel displays [1,2]. It is expected that with good quality p-Si, “System on Glass” products, in which entire electronic circuitry is incorporated directly onto glass are achievable [3]. This approach therefore has the potential to fabricate Integrated AMLCD's (IAMLCD) and bypass conventional Si wafer based products and integrate CMOS circuits with direct view TFT LCD manufacturing. To realize this potential; it is necessary to develop a production process for depositing repeatable, good quality p-Si films on to large area glass substrates.
L'invention concerne un procede pour deposer un film conducteur transparent sur une cible met... more L'invention concerne un procede pour deposer un film conducteur transparent sur une cible metallique. Un procede pour former un film d'oxyde conducteur transparent selon de modes realisation de l'invention comprend le depot du film d'oxyde conducteur transparent dans un processus d'ions reacteurs a courant alternatif pulse, au moyen de polarisations de substrats, et la commande d'au moins un parametre de processus permettant d'avoir un effet sur au moins une caracteristique du film d'oxyde conducteur. Le film d'oxyde transparent ainsi obtenu, qui peut etre, dans certains modes de realisation, un film d'oxyde d'etain et d'indium, peut presenter une large gamme de proprietes materielles dependant des variations des parametres de processus. Par exemple, la variation des parametres de processus peut produire un film comprenant une large gamme de proprietes resistantes et une souplesse de surface du film.
L'invention concerne une couche barriere dielectrique. Ladite couche barriere comprend une co... more L'invention concerne une couche barriere dielectrique. Ladite couche barriere comprend une couche dielectrique amorphe densifiee deposee sur un substrat par un par depot par evaporation sous vide physique, a substrat polarise a courant continu pulse, la couche dielectrique amorphe densifiee etant une couche barriere. L'invention concerne egalement un procede de formation d'une couche barriere comprenant la production d'un substrat et le depot de matiere dielectrique, amorphe, densifiee sur le substrat, dans un processus de depot par evaporation sous vide physique a cible large, polarise, a courant continu pulse. De plus, le processus peut comprendre la realisation d'un traitement permeable a l'air de metal leger. Lesdites couches barrieres peuvent etre utilisees comme des couches electriques, des couches optiques, des couches immunologiques, ou des couches tribologiques.
ABSTRACTWe studied physical properties of titanium hafnium oxide (TixHf1-xO2) alloy thin films de... more ABSTRACTWe studied physical properties of titanium hafnium oxide (TixHf1-xO2) alloy thin films deposited by pulsed DC reactive magnetron sputtering with AC substrate bias. Thin films of two end oxides, hafnium oxides (HfO2) and titanium oxides (TiO2), and their alloys TixHf1-xO2 with a range of compositions deposited with and without the substrate bias were compared to study the dependence of physical properties of the thin films on the substrate bias. Structural, chemical and optical properties of the thin films were analyzed to assess inter-relationship among these properties. Thin films deposited with the AC substrate bias consistently show much higher refractive index and significantly lower optical extinction coefficient than those of thin films deposited without the substrate bias suggesting that characteristic microstructures developed in these thin films are responsible for the differences in the optical properties.
Journal of Korean Vacuum Science & Technology, 1999
The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metalliz... more The main consideration factor to design a magnetron of the sputtering system for TFf-LCD metallization is the high sheet resistance (R_s) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to be considered full target erosion and high film uniformity. After an aluminum-2 at.% Nd alloy target was installed in a magnetron source and the film was deposited on the glass of 600×700 ㎜, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4 mtorr and 10 ㎾, the magnet tilt for the high R_s uniformity of 8.38% was 7 ㎜. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.
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Papers by Ernest Demaray