We report on the nonlinear optical absorption of InN/InxGa1-xN (x=0.8,0.9) multiple-quantum-well structures characterized at 1.55 μm by the Z-scan method in order to obtain the effective nonlinear absorption coefficient (α2) of the... more
We report on the nonlinear optical absorption of InN/InxGa1-xN (x=0.8,0.9) multiple-quantum-well structures characterized at 1.55 μm by the Z-scan method in order to obtain the effective nonlinear absorption coefficient (α2) of the samples at high repetition rate. Saturable absorption is observed for the sample with x=0.9, with an effective α2~-9×103 cm/GW for the studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed, which is attributed to two-photon absorption.
A wet etching method for GaN and AlxGa1-xN, based on aqueous solutions of KOH, is presented. A detailed analysis of the etching rate dependence with temperature and concentration is described. This etching has been used for the... more
A wet etching method for GaN and AlxGa1-xN, based on aqueous solutions of KOH, is presented. A detailed analysis of the etching rate dependence with temperature and concentration is described. This etching has been used for the fabrication of high optical quality pyramidal nanostructures in wurtzite N-face GaN grown on AlN-buffered Si(111) substrates by molecular beam epitaxy. These nanostructures have
Publication Date: 2000
Publication Name: Semiconductor Science and Technology
