Currently, the solar cell market is dominated by silicon-based solar cell since the bandgap of th... more Currently, the solar cell market is dominated by silicon-based solar cell since the bandgap of the silicon is an appropriate match to solar spectrum and silicon is most abundant material on the earth. However, the efficiency of the silicon-based solar cells is limited hence the research and development are concentrated on alternative methods. The Metal-Insulator-Metal(MIM) diode consists of an insulator layer sandwiched between two metals. The current generation mechanism is based on the photovoltaic effect that enables to form Metal-Insulator-Metal solar cells. The technological development allows leading investigations about developing highly efficient MIM diode promising broad applications. MIM diodes have several advantages such as low cost, potentially having high conversion efficiency, integrated circuit (IC) compatibility. Therefore, the feasibility of MIM diodes for solar cell application is explored. In the MIM diode, insulator layers are an integral part of the devices, pr...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
This paper presents a hand-held point-of-care diagnostic device that incorporates a lab-on-a-chip... more This paper presents a hand-held point-of-care diagnostic device that incorporates a lab-on-a-chip module with interdigitated capacitive biosensors for label-free detection of multiple cancer and cardiovascular disease biomarkers. The developed prototype is comprised of a capacitive bio-detection chip, a sensitive capacitive readout electronics enclosed in a hand-held unit and a data analysis software calculating the quantity of biomarkers using previously stored reference database for different concentrations of each biomarker. The capacitive bio-detection chip is based on interdigitated circular electrodes, which are pre-activated with single (for detecting one biomarker) or multiple specific antibodies (for detecting multiple disease biomarkers). Detection principle of capacitive biosensor is based on measuring the level of capacitance change between interdigitated electrode pairs of the capacitive biosensor chip induced by the change in dielectric constant due to affinity-based electron exchange in between antibodies and antigens. The more antibody-antigens binding occurs, the more capacitance change is measured due to the change in dielectric constant of the capacitance media. The device uses pre-activated ready-to-use cartridges, composed of capacitive biosensors, which can be stored 3 months under optimal conditions, and is capable of on-site diagnosis and can report the result in less than 30 minutes. The device is verified with 16 real patient blood samples for 6 different disease biomarkers.
2011 6th European Microwave Integrated Circuit Conference, 2011
This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in... more This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in 0.25-μm SiGe BiCMOS process for X-Band (8–12 GHz) phased array radar applications. The switch is based on series-shunt topology with combination of techniques to improve insertion loss (IL), isolation and power handling capability (P1dB). These techniques include optimization of transistor widths for lower insertion loss and parallel resonance technique to improve isolation. In addition, DC biasing of input and output ports, on-chip impedance transformation networks (ITN) and resistive body-floating are used to improve P1dB of the switch. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 30.8 dB and P1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this work presents the highest P1dB at X-Band compared to other reported single-ended CMOS T/R switches in the literature.
IEEE Transactions on Circuits and Systems II: Express Briefs, 2020
In this brief, design methodology and measurement results of W-Band Dicke radiometer blocks are p... more In this brief, design methodology and measurement results of W-Band Dicke radiometer blocks are presented. The Dicke radiometer blocks are implemented in IHPs 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe BiCMOS technology. All the implemented blocks, namely the SPDT switch, LNA and the power detector demonstrate the state of the art performance at W-Band. The SPDT has a measured IL of 1.8 dB and 20 dB isolation. The LNA achieves a peak gain of 22.3 dB and 4.2 dB NF and the PD has a NEP better than 0.5 pW/<inline-formula> <tex-math notation="LaTeX">$\sqrt {Hz}$ </tex-math></inline-formula>. To achieve the minimum NETD, all the blocks are designed to be as wideband as possible. Using the measurement and simulation results, the achievable NETD of the radiometer is calculated to be better than 0.5 K.
Currently, the solar cell market is dominated by silicon-based solar cell since the bandgap of th... more Currently, the solar cell market is dominated by silicon-based solar cell since the bandgap of the silicon is an appropriate match to solar spectrum and silicon is most abundant material on the earth. However, the efficiency of the silicon-based solar cells is limited hence the research and development are concentrated on alternative methods. The Metal-Insulator-Metal(MIM) diode consists of an insulator layer sandwiched between two metals. The current generation mechanism is based on the photovoltaic effect that enables to form Metal-Insulator-Metal solar cells. The technological development allows leading investigations about developing highly efficient MIM diode promising broad applications. MIM diodes have several advantages such as low cost, potentially having high conversion efficiency, integrated circuit (IC) compatibility. Therefore, the feasibility of MIM diodes for solar cell application is explored. In the MIM diode, insulator layers are an integral part of the devices, pr...
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018
This paper presents a hand-held point-of-care diagnostic device that incorporates a lab-on-a-chip... more This paper presents a hand-held point-of-care diagnostic device that incorporates a lab-on-a-chip module with interdigitated capacitive biosensors for label-free detection of multiple cancer and cardiovascular disease biomarkers. The developed prototype is comprised of a capacitive bio-detection chip, a sensitive capacitive readout electronics enclosed in a hand-held unit and a data analysis software calculating the quantity of biomarkers using previously stored reference database for different concentrations of each biomarker. The capacitive bio-detection chip is based on interdigitated circular electrodes, which are pre-activated with single (for detecting one biomarker) or multiple specific antibodies (for detecting multiple disease biomarkers). Detection principle of capacitive biosensor is based on measuring the level of capacitance change between interdigitated electrode pairs of the capacitive biosensor chip induced by the change in dielectric constant due to affinity-based electron exchange in between antibodies and antigens. The more antibody-antigens binding occurs, the more capacitance change is measured due to the change in dielectric constant of the capacitance media. The device uses pre-activated ready-to-use cartridges, composed of capacitive biosensors, which can be stored 3 months under optimal conditions, and is capable of on-site diagnosis and can report the result in less than 30 minutes. The device is verified with 16 real patient blood samples for 6 different disease biomarkers.
2011 6th European Microwave Integrated Circuit Conference, 2011
This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in... more This paper presents a single-pole double-throw (SPDT) transmit/receive (T/R) switch fabricated in 0.25-μm SiGe BiCMOS process for X-Band (8–12 GHz) phased array radar applications. The switch is based on series-shunt topology with combination of techniques to improve insertion loss (IL), isolation and power handling capability (P1dB). These techniques include optimization of transistor widths for lower insertion loss and parallel resonance technique to improve isolation. In addition, DC biasing of input and output ports, on-chip impedance transformation networks (ITN) and resistive body-floating are used to improve P1dB of the switch. All these design techniques resulted in a measured IL of 3.6 dB, isolation of 30.8 dB and P1dB of 28.2 dBm at 10 GHz. The return losses at both input and output ports are better than 16 dB from 8 to 12 GHz. To our knowledge, this work presents the highest P1dB at X-Band compared to other reported single-ended CMOS T/R switches in the literature.
IEEE Transactions on Circuits and Systems II: Express Briefs, 2020
In this brief, design methodology and measurement results of W-Band Dicke radiometer blocks are p... more In this brief, design methodology and measurement results of W-Band Dicke radiometer blocks are presented. The Dicke radiometer blocks are implemented in IHPs 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> SiGe BiCMOS technology. All the implemented blocks, namely the SPDT switch, LNA and the power detector demonstrate the state of the art performance at W-Band. The SPDT has a measured IL of 1.8 dB and 20 dB isolation. The LNA achieves a peak gain of 22.3 dB and 4.2 dB NF and the PD has a NEP better than 0.5 pW/<inline-formula> <tex-math notation="LaTeX">$\sqrt {Hz}$ </tex-math></inline-formula>. To achieve the minimum NETD, all the blocks are designed to be as wideband as possible. Using the measurement and simulation results, the achievable NETD of the radiometer is calculated to be better than 0.5 K.
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Papers by Yasar Gurbuz