High performance generic building blocks will be reviewed such as 10dBm sources by III-V/Si heter... more High performance generic building blocks will be reviewed such as 10dBm sources by III-V/Si heterogeneous integration, 40G Si modulators, and 100GHz Ge detectors. Different scenari for integrating photonic with an electronic chip will be addressed.
Kawata and Tani's [4] experiments showed that the evanescent field created on the surface of... more Kawata and Tani's [4] experiments showed that the evanescent field created on the surface of an ion exchanged waveguide could trap and move microparticles. This opened up the possibility of combining conventional optical trapping with integrated optics in order to create new microsystems for the manipulation of particles or biological objects. Recently, the use of strip silicon nitride waveguides increased the performances of these systems enabling higher particles speeds and reduced guided power [12]. Our experiments demonstrate that polarization affects drastically the way particles are propelled along the waveguide surface. For example in TM polarization, 0,6 mum diameter gold particles are moving along the center of the waveguide whereas in TE, they are propelled along its sides. Moreover, it appears that gradient forces involved in this phenomenon depend on the particle size. To understand this behavior, a numerical approach of the problem based on the finite element method has been developed. This method enables the calculation of the 3D distribution of the electric fields. The resulting optical forces are calculated thanks to the Maxwell stress tensor formalism. This first experimental and theoretical illustration of repulsive gradient forces on metallic particles opens up perspectives for polarization based sorting systems.
In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon sl... more In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach-Zehnder interferometer with two 500 μm long slow wave phase shifters. 40 Gb/s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect.
European Conference and Exhibition on Optical Communication, 2012
Abstract (40-Word Limit): In the last 8 years carrier depletion modulators have become the mainst... more Abstract (40-Word Limit): In the last 8 years carrier depletion modulators have become the mainstream high data rate building block for high performance silicon photonics link. In this work we describe carrier depletion MZI and ring modulators, cavity structures for modulation enhancement and QCSE modulators, all of which are under development as part of the UK Silicon Photonics project and the European HELIOS project.
8th IEEE International Conference on Group IV Photonics, 2011
Vertical-cavity surface-emitting lasers (VCSELs) based on double photonic crystal reflectors for ... more Vertical-cavity surface-emitting lasers (VCSELs) based on double photonic crystal reflectors for the heterogeneous integration on complementary metal- oxide-semiconductor (CMOS) are presented. The latest achievements in technological processing and optical mode engineering are shown and discussed.
ABSTRACT Heterogeneous integration of III-V microlasers on silicon is discussed as a promising sc... more ABSTRACT Heterogeneous integration of III-V microlasers on silicon is discussed as a promising scheme for photonic-electronic convergence. The typical performances of an optical interconnect circuit are evaluated and two types of microlasers are proposed and compared.
Plasmonic waveguiding structures have the ability to confine and propagate light over short dista... more Plasmonic waveguiding structures have the ability to confine and propagate light over short distances, typically less than a hundred micrometers. This short propagation length is the price that is paid for confining light to dimensions on the order of a hundred of nanometers. With these scales in mind, several plasmonic devices can be proposed (e.g. wavelength multiplexors) and some of
Recent advances in silicon photonics have aided the development of on-chip communications. Power ... more Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as -7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than -26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below -35 dBm. These results pave the way for low-power-consumption on-chip communication applications.
Photonic Materials, Devices, and Applications III, 2009
This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si... more This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of waveguide integrated photodetectors at 1.53 mum wavelength under 4 V reverse bias is 42 GHz.
High performance generic building blocks will be reviewed such as 10dBm sources by III-V/Si heter... more High performance generic building blocks will be reviewed such as 10dBm sources by III-V/Si heterogeneous integration, 40G Si modulators, and 100GHz Ge detectors. Different scenari for integrating photonic with an electronic chip will be addressed.
Kawata and Tani's [4] experiments showed that the evanescent field created on the surface of... more Kawata and Tani's [4] experiments showed that the evanescent field created on the surface of an ion exchanged waveguide could trap and move microparticles. This opened up the possibility of combining conventional optical trapping with integrated optics in order to create new microsystems for the manipulation of particles or biological objects. Recently, the use of strip silicon nitride waveguides increased the performances of these systems enabling higher particles speeds and reduced guided power [12]. Our experiments demonstrate that polarization affects drastically the way particles are propelled along the waveguide surface. For example in TM polarization, 0,6 mum diameter gold particles are moving along the center of the waveguide whereas in TE, they are propelled along its sides. Moreover, it appears that gradient forces involved in this phenomenon depend on the particle size. To understand this behavior, a numerical approach of the problem based on the finite element method has been developed. This method enables the calculation of the 3D distribution of the electric fields. The resulting optical forces are calculated thanks to the Maxwell stress tensor formalism. This first experimental and theoretical illustration of repulsive gradient forces on metallic particles opens up perspectives for polarization based sorting systems.
In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon sl... more In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach-Zehnder interferometer with two 500 μm long slow wave phase shifters. 40 Gb/s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect.
European Conference and Exhibition on Optical Communication, 2012
Abstract (40-Word Limit): In the last 8 years carrier depletion modulators have become the mainst... more Abstract (40-Word Limit): In the last 8 years carrier depletion modulators have become the mainstream high data rate building block for high performance silicon photonics link. In this work we describe carrier depletion MZI and ring modulators, cavity structures for modulation enhancement and QCSE modulators, all of which are under development as part of the UK Silicon Photonics project and the European HELIOS project.
8th IEEE International Conference on Group IV Photonics, 2011
Vertical-cavity surface-emitting lasers (VCSELs) based on double photonic crystal reflectors for ... more Vertical-cavity surface-emitting lasers (VCSELs) based on double photonic crystal reflectors for the heterogeneous integration on complementary metal- oxide-semiconductor (CMOS) are presented. The latest achievements in technological processing and optical mode engineering are shown and discussed.
ABSTRACT Heterogeneous integration of III-V microlasers on silicon is discussed as a promising sc... more ABSTRACT Heterogeneous integration of III-V microlasers on silicon is discussed as a promising scheme for photonic-electronic convergence. The typical performances of an optical interconnect circuit are evaluated and two types of microlasers are proposed and compared.
Plasmonic waveguiding structures have the ability to confine and propagate light over short dista... more Plasmonic waveguiding structures have the ability to confine and propagate light over short distances, typically less than a hundred micrometers. This short propagation length is the price that is paid for confining light to dimensions on the order of a hundred of nanometers. With these scales in mind, several plasmonic devices can be proposed (e.g. wavelength multiplexors) and some of
Recent advances in silicon photonics have aided the development of on-chip communications. Power ... more Recent advances in silicon photonics have aided the development of on-chip communications. Power consumption, however, remains an issue in almost all integrated devices. Here, we report a 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias. The avalanche photodiode scheme requires only simple technological steps that are fully compatible with complementary metal oxide semiconductor processes and do not need nanometre accuracy and/or complex epitaxial growth schemes. An intrinsic gain higher than 20 was demonstrated under a bias voltage as low as -7 V. The Q-factor relating to the signal-to-noise ratio at 10 Gbit per second was maintained over 20 dB without the use of a trans-impedance amplifier for an input optical power lower than -26 dBm thanks to an aggressive shrinkage of the germanium multiplication region. A maximum gain over 140 was also obtained for optical powers below -35 dBm. These results pave the way for low-power-consumption on-chip communication applications.
Photonic Materials, Devices, and Applications III, 2009
This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si... more This paper reports on fabrication and characterization of waveguide integrated vertical PIN Ge/Si photodetectors for operation at optical telecommunication wavelengths. The measured -3dB bandwidth of waveguide integrated photodetectors at 1.53 mum wavelength under 4 V reverse bias is 42 GHz.
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Papers by Jean-marc Fedeli