... Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at ... more ... Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using x-ray microscopy, J ... C. Okoro, G. Eneman, M. Gonzalez, B. Vandevelde, B. Swinnen, B. Stoukatch, P. Verheyen, E. Beyne, and D. Vandepitte, Electronic ...
Integrated processing of wafers and use of chemical passivation layers illustrate two approaches ... more Integrated processing of wafers and use of chemical passivation layers illustrate two approaches to control of reactive contaminants in future semiconductor manufac-turing. Even in an integrated-processing sequence, an im-perfect processing ambient would necessitate ...
The performance ofTi.3W.7 and Nb thin films as diffusion barriers for Au was investigated by Ruth... more The performance ofTi.3W.7 and Nb thin films as diffusion barriers for Au was investigated by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). The films were sputter deposited in Ar:N2 (70:30 vol%) or pure Ar on amorphous Si02. They were annealed in air at temperatures ranging from 250·C up to 750·C for several hours. In-depth profiles revealed an onset of oxidation of the barriers at 520·C for Nb and 600·C for TiW. Barrier oxidation and extensive diffusion could be correlated. Distinct diffusion behavior as a function of temperature was established between TiW and Nb. A Nb multilayer structure was found to provide the best reliability as the barrier and as the adhesion layer.
... Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at ... more ... Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using x-ray microscopy, J ... C. Okoro, G. Eneman, M. Gonzalez, B. Vandevelde, B. Swinnen, B. Stoukatch, P. Verheyen, E. Beyne, and D. Vandepitte, Electronic ...
Integrated processing of wafers and use of chemical passivation layers illustrate two approaches ... more Integrated processing of wafers and use of chemical passivation layers illustrate two approaches to control of reactive contaminants in future semiconductor manufac-turing. Even in an integrated-processing sequence, an im-perfect processing ambient would necessitate ...
The performance ofTi.3W.7 and Nb thin films as diffusion barriers for Au was investigated by Ruth... more The performance ofTi.3W.7 and Nb thin films as diffusion barriers for Au was investigated by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). The films were sputter deposited in Ar:N2 (70:30 vol%) or pure Ar on amorphous Si02. They were annealed in air at temperatures ranging from 250·C up to 750·C for several hours. In-depth profiles revealed an onset of oxidation of the barriers at 520·C for Nb and 600·C for TiW. Barrier oxidation and extensive diffusion could be correlated. Distinct diffusion behavior as a function of temperature was established between TiW and Nb. A Nb multilayer structure was found to provide the best reliability as the barrier and as the adhesion layer.
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Papers by M. Liehr