Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the nea... more Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching te...
2006 European Solid-State Device Research Conference, 2006
Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure simila... more Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure similar to that of avalanche photodiodes of fiber optic systems, but for optimizing the device structure radically different criteria must be adopted. Such criteria are here discussed and a complete experimental characterization of the fabricated device is reported. Remarkable performance is verified also at moderately low temperature, as
In this paper we present free-space micro-optics coupling results for 10 Gb/s avalanche photodiod... more In this paper we present free-space micro-optics coupling results for 10 Gb/s avalanche photodiode (APD) receivers. A free-space micro-optics approach provides compact cost-effective coupling with minimum insertion loss. Both DC and high frequency (RF) coupling characteristics are presented, and respective dimensions of the photosensitive areas are calculated. Effects of both axial and lateral misalignments on 10 Gb/s APD performance are
InGaAs/InP-based semiconductor avalanche photodiodes are usually employed for single-photon count... more InGaAs/InP-based semiconductor avalanche photodiodes are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has commercialized a diode integrating monolithically a feedback resistor. This solution effectively quenches the avalanche and drastically reduces afterpulsing. Here, we report the development and characterization of a detector module based on this
IEEE Transactions on Appiled Superconductivity, 1995
YBa2Cu3O7-x thin films patterned in a meander line resonant structure are used to probe vortex dy... more YBa2Cu3O7-x thin films patterned in a meander line resonant structure are used to probe vortex dynamics at microwave frequencies. We perform highly sensitive measurements of the changes in surface resistance ΔRs(H,T,θ) of YBa2Cu3O7-x thin films as a function of applied dc field, temperature, and angle of the applied field relative to the ab-planes. We observe that the component of the
AbstractThe linearity of response and spatial uniformity of response characteristics of two comm... more AbstractThe linearity of response and spatial uniformity of response characteristics of two commercially available single-photon avalanche photodiode (SPAD) detection systems were experimentally investigated using a dedicated characterization facility that measures these parameters. ...
The increasing market demand for high-speed optical-transmission systems at rates of IO Gbls bas ... more The increasing market demand for high-speed optical-transmission systems at rates of IO Gbls bas resulted in technical challenges for suppliers of high-performance, manufacturable opto-electronic components and systems. In particular, the performance of the InP ...
Lasers and Electro-Optics Society, IEEE LEOS Annual Meeting, 2006
The effects of short (~1 ns) gating pulses and blanking on afterpulsing in an InGaAs/InP single p... more The effects of short (~1 ns) gating pulses and blanking on afterpulsing in an InGaAs/InP single photon detector are characterized at 1.5μm. Afterpulse mitigation using gate pulse blanking immediately following detection events is studied, and temporal effects are discussed
An improved gated-mode passive quenching with active reset (gated-PQAR) circuit is utilized in co... more An improved gated-mode passive quenching with active reset (gated-PQAR) circuit is utilized in conjunction with an InGaAs/InP single-photon avalanche photodiode (SPAD). Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. The reduced afterpulsing afforded by the gated-PQAR circuit enabled measurement of afterpulsing for hold-off times as short as 10 ns.
Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the nea... more Single-photon detectors (SPDs) are the most sensitive instruments for light detection. In the near-infrared range, SPDs based on III-V compound semiconductor avalanche photodiodes have been extensively used during the past two decades for diverse applications due to their advantages in practicality including small size, low cost and easy operation. In the past decade, the rapid developments and increasing demands in quantum information science have served as key drivers to improve the device performance of single-photon avalanche diodes and to invent new avalanche quenching techniques. This Review aims to introduce the technology advances of InGaAs/InP single-photon detector systems in the telecom wavelengths and the relevant quantum communication applications, and particularly to highlight recent emerging techniques such as high-frequency gating at GHz rates and free-running operation using negative-feedback avalanche diodes. Future perspectives of both the devices and quenching te...
2006 European Solid-State Device Research Conference, 2006
Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure simila... more Single-photon avalanche diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure similar to that of avalanche photodiodes of fiber optic systems, but for optimizing the device structure radically different criteria must be adopted. Such criteria are here discussed and a complete experimental characterization of the fabricated device is reported. Remarkable performance is verified also at moderately low temperature, as
In this paper we present free-space micro-optics coupling results for 10 Gb/s avalanche photodiod... more In this paper we present free-space micro-optics coupling results for 10 Gb/s avalanche photodiode (APD) receivers. A free-space micro-optics approach provides compact cost-effective coupling with minimum insertion loss. Both DC and high frequency (RF) coupling characteristics are presented, and respective dimensions of the photosensitive areas are calculated. Effects of both axial and lateral misalignments on 10 Gb/s APD performance are
InGaAs/InP-based semiconductor avalanche photodiodes are usually employed for single-photon count... more InGaAs/InP-based semiconductor avalanche photodiodes are usually employed for single-photon counting at telecom wavelength. However they are affected by afterpulsing which limits the diode performance. Recently, Princeton Lightwave has commercialized a diode integrating monolithically a feedback resistor. This solution effectively quenches the avalanche and drastically reduces afterpulsing. Here, we report the development and characterization of a detector module based on this
IEEE Transactions on Appiled Superconductivity, 1995
YBa2Cu3O7-x thin films patterned in a meander line resonant structure are used to probe vortex dy... more YBa2Cu3O7-x thin films patterned in a meander line resonant structure are used to probe vortex dynamics at microwave frequencies. We perform highly sensitive measurements of the changes in surface resistance ΔRs(H,T,θ) of YBa2Cu3O7-x thin films as a function of applied dc field, temperature, and angle of the applied field relative to the ab-planes. We observe that the component of the
AbstractThe linearity of response and spatial uniformity of response characteristics of two comm... more AbstractThe linearity of response and spatial uniformity of response characteristics of two commercially available single-photon avalanche photodiode (SPAD) detection systems were experimentally investigated using a dedicated characterization facility that measures these parameters. ...
The increasing market demand for high-speed optical-transmission systems at rates of IO Gbls bas ... more The increasing market demand for high-speed optical-transmission systems at rates of IO Gbls bas resulted in technical challenges for suppliers of high-performance, manufacturable opto-electronic components and systems. In particular, the performance of the InP ...
Lasers and Electro-Optics Society, IEEE LEOS Annual Meeting, 2006
The effects of short (~1 ns) gating pulses and blanking on afterpulsing in an InGaAs/InP single p... more The effects of short (~1 ns) gating pulses and blanking on afterpulsing in an InGaAs/InP single photon detector are characterized at 1.5μm. Afterpulse mitigation using gate pulse blanking immediately following detection events is studied, and temporal effects are discussed
An improved gated-mode passive quenching with active reset (gated-PQAR) circuit is utilized in co... more An improved gated-mode passive quenching with active reset (gated-PQAR) circuit is utilized in conjunction with an InGaAs/InP single-photon avalanche photodiode (SPAD). Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. The reduced afterpulsing afforded by the gated-PQAR circuit enabled measurement of afterpulsing for hold-off times as short as 10 ns.
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Papers by Mark Itzler