2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010
ABSTRACT A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal ... more ABSTRACT A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching to a 50 ¿ impedance. These results are obtained thanks to accurate millimeter wave models for MOS and integrated microstrip lines used as passive components. The amplifier design takes electromigration constraints at 105°C into account. Excellent agreement between measurement and simulation results is observed.
... SL and space SS are both 0.6 μm (the minimum realizable values in this technology) so as to r... more ... SL and space SS are both 0.6 μm (the minimum realizable values in this technology) so as to reduce the eddy currents flowing ... Benech, and JM Fournier, 65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to ...
Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits.... more Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits. In this paper, several 0.12 mum-CMOS Cu-Si3N4-Cu capacitors realized with damascene architecture and whose process allows high-k dielectric compatibility have been designed and characterised from 45 MHz to 40 GHz. Large band equivalent electrical models have been carried out and commented
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2010
ABSTRACT A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal ... more ABSTRACT A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching to a 50 ¿ impedance. These results are obtained thanks to accurate millimeter wave models for MOS and integrated microstrip lines used as passive components. The amplifier design takes electromigration constraints at 105°C into account. Excellent agreement between measurement and simulation results is observed.
... SL and space SS are both 0.6 μm (the minimum realizable values in this technology) so as to r... more ... SL and space SS are both 0.6 μm (the minimum realizable values in this technology) so as to reduce the eddy currents flowing ... Benech, and JM Fournier, 65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to ...
Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits.... more Metal-insulator-metal (MIM) capacitors are key components in radio frequency integrated circuits. In this paper, several 0.12 mum-CMOS Cu-Si3N4-Cu capacitors realized with damascene architecture and whose process allows high-k dielectric compatibility have been designed and characterised from 45 MHz to 40 GHz. Large band equivalent electrical models have been carried out and commented
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