International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 2007
ABSTRACT Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high ... more ABSTRACT Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high excitation levels in pulsed lasing mode (200 A, 100 ns, 10 kHz) are investigated and double-band lasing is reached.
ABSTRACT A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers... more ABSTRACT A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al0.3Ga0.7As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.
Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at... more Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at a wavelength of 1.8 μm were obtained by metalorganic vapor-phase epitaxy. The laser diodes with a strip width of 100 μm provide for an output radiation power of 1.2 W in the continuous operation mode at a temperature of 20C. A minimum threshold current density was 320 A/cm2 and a differential quantum efficiency was ηd=28% for a Fabry-Perot resonator length of 1.4 mm. The internal optical losses in the laser heterostructure studied amounted to 5.6 cm−1.
ABSTRACT A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructure... more ABSTRACT A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.
Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double het... more Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double heterostructure laser are investigated. The measurements are performed in quasicontinuous and continuous pumping regimes at room temperature. These lasers are shown to be spatially single-mode over the entire working range of currents. The broadening of the longitudinal modes under quasicontinuous pumping is attributed to heating of the active region of the lasers. The pump pulse duration at which heating of the active region of the lasers can be neglected is estimated.
... SO Slipchenko, NA Pikhtin, NV Fetisova, MA Khomylev, AA Marmalyuk, DB Nikitin, AA Padalitsa, ... more ... SO Slipchenko, NA Pikhtin, NV Fetisova, MA Khomylev, AA Marmalyuk, DB Nikitin, AA Padalitsa, PV Bulaev, ID Zalevskiœ, and IS Tarasov Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. ... 12. PV Bulaev, VA Kapitonov, AV Lyutetskiœ, et al., Fiz. Tekh. ...
ABSTRACT Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Per... more ABSTRACT Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Perot laser (λ=1.55 μm). The method used to vary the gain profile of the laser allows one to predict the range of possible wavelength tuning.
Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-... more Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW.
The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configuratio... more The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 m was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown that the heterolasers based on the laser structure with a broadened three-step waveguide have the highest quantum efficiency of stimulated radiation. In heterolasers of the suggested configuration, a decrease in the electron ejection out of the active region into the waveguide was observed. The power of the optical radiation of 4.2 W in a continuous-wave lasing mode was obtained in laser diodes with a mesa-stripe width of 100 m. The quantum efficiency was 85% for the internal optical losses of 3.6 cm−1.
InGaAsP epitaxial layers, which are obtained in the instability region on InP (001) and GaAs (001... more InGaAsP epitaxial layers, which are obtained in the instability region on InP (001) and GaAs (001) substrates, are investigated by photoluminescence and transmission-electronmicroscopy methods. The results are discussed on the basis of the theory of spinodal decomposition of solid solutions. It is established experimentally that in certain temperature and composition ranges the solid solutions InGaAsP are a system of charged, alternating (in mutually perpendicular directions [100] and [010]) domains of a solid solution with two different compositions and different lattice constants. The domain structure is very clearly defined at the surface of the epitaxial film and becomes blurred in the film near the substrate. The data obtained very likely show spinodal decomposition of the solid solutions InGaAsP in the test samples.
International Conference on Lasers, Applications, and Technologies 2007: Advanced Lasers and Systems, 2007
ABSTRACT Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high ... more ABSTRACT Power and spectral characteristics of Fabry-Perot semiconductor lasers based on at high excitation levels in pulsed lasing mode (200 A, 100 ns, 10 kHz) are investigated and double-band lasing is reached.
ABSTRACT A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers... more ABSTRACT A deep diffraction grating with a large period (∼2 μm) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating ∼2 μm deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al0.3Ga0.7As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.
Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at... more Separately bounded InGaAsP/InP laser heterostructures with two stressed quantum wells emitting at a wavelength of 1.8 μm were obtained by metalorganic vapor-phase epitaxy. The laser diodes with a strip width of 100 μm provide for an output radiation power of 1.2 W in the continuous operation mode at a temperature of 20C. A minimum threshold current density was 320 A/cm2 and a differential quantum efficiency was ηd=28% for a Fabry-Perot resonator length of 1.4 mm. The internal optical losses in the laser heterostructure studied amounted to 5.6 cm−1.
ABSTRACT A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructure... more ABSTRACT A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.
Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double het... more Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double heterostructure laser are investigated. The measurements are performed in quasicontinuous and continuous pumping regimes at room temperature. These lasers are shown to be spatially single-mode over the entire working range of currents. The broadening of the longitudinal modes under quasicontinuous pumping is attributed to heating of the active region of the lasers. The pump pulse duration at which heating of the active region of the lasers can be neglected is estimated.
... SO Slipchenko, NA Pikhtin, NV Fetisova, MA Khomylev, AA Marmalyuk, DB Nikitin, AA Padalitsa, ... more ... SO Slipchenko, NA Pikhtin, NV Fetisova, MA Khomylev, AA Marmalyuk, DB Nikitin, AA Padalitsa, PV Bulaev, ID Zalevskiœ, and IS Tarasov Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. ... 12. PV Bulaev, VA Kapitonov, AV Lyutetskiœ, et al., Fiz. Tekh. ...
ABSTRACT Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Per... more ABSTRACT Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Perot laser (λ=1.55 μm). The method used to vary the gain profile of the laser allows one to predict the range of possible wavelength tuning.
Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-... more Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW.
The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configuratio... more The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 m was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown that the heterolasers based on the laser structure with a broadened three-step waveguide have the highest quantum efficiency of stimulated radiation. In heterolasers of the suggested configuration, a decrease in the electron ejection out of the active region into the waveguide was observed. The power of the optical radiation of 4.2 W in a continuous-wave lasing mode was obtained in laser diodes with a mesa-stripe width of 100 m. The quantum efficiency was 85% for the internal optical losses of 3.6 cm−1.
InGaAsP epitaxial layers, which are obtained in the instability region on InP (001) and GaAs (001... more InGaAsP epitaxial layers, which are obtained in the instability region on InP (001) and GaAs (001) substrates, are investigated by photoluminescence and transmission-electronmicroscopy methods. The results are discussed on the basis of the theory of spinodal decomposition of solid solutions. It is established experimentally that in certain temperature and composition ranges the solid solutions InGaAsP are a system of charged, alternating (in mutually perpendicular directions [100] and [010]) domains of a solid solution with two different compositions and different lattice constants. The domain structure is very clearly defined at the surface of the epitaxial film and becomes blurred in the film near the substrate. The data obtained very likely show spinodal decomposition of the solid solutions InGaAsP in the test samples.
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