Saratov Fall Meeting 2015: Third International Symposium on Optics and Biophotonics and Seventh Finnish-Russian Photonics and Laser Symposium (PALS), 2016
2008 4th International Conference on Advanced Optoelectronics and Lasers, 2008
ABSTRACT We calculate the terahertz absorption spectrum of the high-electron-mobility transistor ... more ABSTRACT We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon inter-mode scattering is discussed compared to the other possible plasmon damping mechanisms.
Results of a theoretical investigation of the angle dependence of chromatic polarization conversi... more Results of a theoretical investigation of the angle dependence of chromatic polarization conversion of the electromagnetic wave (EW) in a density-modulated two-dimensional (2D) electron system are presented. A giant enhancement of the polarization conversion efficiency is found to emerge under plasma oscillation resonance in the periodic 2D electron system. At normal incidence, the greatest polarization conversion takes place when the angle between the plane of incidence of the EW and the direction of the periodicity of the system (azimuthal angle)is equal to 45°. At oblique incidence, the value of the azimuthal angle, at shich the maximum polarization conversion in the system occurs, deviates from 45° depending on a particular value of the contrast ratio of dielectric constants of media surrounding the 2D electron system. The greater the contrast ratio, the smaller the deviation. In the total reflection regime, the total polarization conversion can be reached, if the electron scattering in the 2D electron system vanishes. In contrast to the refringence case, the frequency of the polarization conversion resonance deviates with the angle of incidence and azimuthal angle at the total reflection regime as a result of the field confinement in the vicinity of the 2D electron system. Numerical calculations are performed for the characteristic parameters of an actual 2D electron system in the electron inversion layer on p-Si at the terahertz frequencies.
The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effec... more The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of terahertz photo-conductivity in such a structure.
The terahertz absorption spectrum of plasmon modes in a grid-gated double-quantum-well (DQW) fiel... more The terahertz absorption spectrum of plasmon modes in a grid-gated double-quantum-well (DQW) field-effect transistor structure is analyzed theoretically and numerically using a first principles electromagnetic approach and is shown to faithfully reproduce important physical features of recent experimental observations. We find that the essential character of the response-multiple resonances corresponding to spatial harmonics of standing plasmons under the metal grating-is
We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a sh... more We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon intermode scattering. The results allow interpreting recent experimental results on resonant terahertz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon
Saratov Fall Meeting 2015: Third International Symposium on Optics and Biophotonics and Seventh Finnish-Russian Photonics and Laser Symposium (PALS), 2016
2008 4th International Conference on Advanced Optoelectronics and Lasers, 2008
ABSTRACT We calculate the terahertz absorption spectrum of the high-electron-mobility transistor ... more ABSTRACT We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon inter-mode scattering. The results allow to interpret recent experimental results of resonant THz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon inter-mode scattering is discussed compared to the other possible plasmon damping mechanisms.
Results of a theoretical investigation of the angle dependence of chromatic polarization conversi... more Results of a theoretical investigation of the angle dependence of chromatic polarization conversion of the electromagnetic wave (EW) in a density-modulated two-dimensional (2D) electron system are presented. A giant enhancement of the polarization conversion efficiency is found to emerge under plasma oscillation resonance in the periodic 2D electron system. At normal incidence, the greatest polarization conversion takes place when the angle between the plane of incidence of the EW and the direction of the periodicity of the system (azimuthal angle)is equal to 45°. At oblique incidence, the value of the azimuthal angle, at shich the maximum polarization conversion in the system occurs, deviates from 45° depending on a particular value of the contrast ratio of dielectric constants of media surrounding the 2D electron system. The greater the contrast ratio, the smaller the deviation. In the total reflection regime, the total polarization conversion can be reached, if the electron scattering in the 2D electron system vanishes. In contrast to the refringence case, the frequency of the polarization conversion resonance deviates with the angle of incidence and azimuthal angle at the total reflection regime as a result of the field confinement in the vicinity of the 2D electron system. Numerical calculations are performed for the characteristic parameters of an actual 2D electron system in the electron inversion layer on p-Si at the terahertz frequencies.
The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effec... more The terahertz absorption spectra of plasmon modes in a grid-gated double-quantum-well field-effect transistor structure is analyzed theoretically and numerically using the scattering matrix approach and is shown to faithfully reproduce strong resonant features of recent experimental observations of terahertz photo-conductivity in such a structure.
The terahertz absorption spectrum of plasmon modes in a grid-gated double-quantum-well (DQW) fiel... more The terahertz absorption spectrum of plasmon modes in a grid-gated double-quantum-well (DQW) field-effect transistor structure is analyzed theoretically and numerically using a first principles electromagnetic approach and is shown to faithfully reproduce important physical features of recent experimental observations. We find that the essential character of the response-multiple resonances corresponding to spatial harmonics of standing plasmons under the metal grating-is
We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a sh... more We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon intermode scattering. The results allow interpreting recent experimental results on resonant terahertz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon
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Papers by Olga Polischuk