O. Auciello graduated with honors with M.S. (1973) and Ph.D (1976) degrees in Physics from the Physics Institute “Dr. Balseiro” (Universidad Nacional de Cuyo-Argentina). EE-University of Córdoba-Argentina (1970). Postdoctoral-McMaster University, Hamilton, Canada (1977-1979)
<jats:title>Abstract</jats:title> <jats:p>This paper focuses on describing the ... more <jats:title>Abstract</jats:title> <jats:p>This paper focuses on describing the integration of ultrananocrystalline diamond (UNCD) coating on pure titanium-based dental implants (DIs) integrated with the surface pre-treatment by chemical-mechanical nano-structuring (CMNS) process. The combination of the UNCD coating with the CMNS metal surface treatment provides a transformational process to produce a new generation of metallic implants. CMNS promotes a uniform and dense titanium oxide interface and UNCD enables higher resistance to chemical-induced corrosion by oral fluids and enhanced bone attachment due to superior bone cell growth on C atoms (element of life in human DNA and cell). The main focus of the presented research is to establish the preliminary studies on the integration of the UNCD coating process on CMNS treated dental implants to promote corrosion resistance and biocompatibility. It is demonstrated that the CMNS process in the presence of an oxidizer (1M to be optimal) induces a tailored interface to promote UNCD coating capability through effective interface passivation leading to uniform surface coverage. The final implant product is observed to have improved corrosion potential and enhanced hydrophobicity indicating better biocompatibility providing the basis for a new generation of superior DIs. The findings can further be extended to the hip, knee, and other orthopedic metallic implants, which require major performance improvements, particularly in reducing or eliminating in-vivo body fluid-induced chemical corrosion.</jats:p>
2019 7th International Engineering, Sciences and Technology Conference (IESTEC)
The combined effect of total gas pressure (20-80 mbar), precursor gas chemistry (Ar/CH4/H2) and m... more The combined effect of total gas pressure (20-80 mbar), precursor gas chemistry (Ar/CH4/H2) and microwave power on the grain size and growth rate of polycrystalline diamond films, grown by MPCVD, was investigated. The key findings are: 1) Grain size of polycrystalline diamond films depends critically on the total gas pressure such that a minimum pressure of 60 mbar is needed to grow nanocrystalline diamond films (grain size of 100s of nanometers) even when using a hydrogen rich gas chemistry (98% H2, 2% CH4); 2) For a fixed gas pressure, the grain size of polycrystalline diamond films increases as the H2 concentration increases, and decreases as the Ar concentration decreases, resulting in a maximum grain size for Ar 0%/CH4 2%, H2 98% gas mixture and a minimum grain size for Ar 98%/CH4 2%, H2 0% gas mixture; 3) The microwave power (1900-2500 W) effect on grain size and growth rate.
펄스 레이저 아브레이션 법으로 스트론튬 비스무스 탄탈룸 산화물 박막을 제조하였다. 저온 성장, 후 열처리에 의해서 백금 (111) 면 위에 다결정 층상 페로브스카이트 구조를 ... more 펄스 레이저 아브레이션 법으로 스트론튬 비스무스 탄탈룸 산화물 박막을 제조하였다. 저온 성장, 후 열처리에 의해서 백금 (111) 면 위에 다결정 층상 페로브스카이트 구조를 형성하였다. 하부 백금 전극으로 비스무스가 확산 침투하였고, 보호막 티타늄이 스트론튬 비스무스 탄탈륨 박막 층으로 확산 침투하였다. Pt/SrBi₂Ta₂O 9 /Pt 캐패시터 구조에서 스위칭 횟수 10 11 회까지 파티그 현상이 나타나지 않았고, 10 -8 A/cm² 정도의 좋은 누설 전류 특성을 나타내고 있다.
ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated... more ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.
An intense worldwide research-and-development effort has been undertaken during the last seven ye... more An intense worldwide research-and-development effort has been undertaken during the last seven years with the objective of developing thin-film deposition techniques and materials-integration and processing strategies capable of realizing a commercially viable solid-state nonvolatile-ferroelectric-random-access-memory (NVFRAM) technology. Many laboratories around the world have focused their work on developing strategies for integrating submicron thin-film ferroelectric capacitors with the mature silicon-based transistor technology to yield capacitor-transistor-based memory architectures as schematically illustrated in Figure 1. This figure also shows the perovskite unit cell of a capacitor, based on a ferroelectric Pb(ZrxTi 1−xO3 (PZT) layer, and the variety of structural, chemical, electronic, and ionic interfaces that arise during the fabrication and integration of these metal-oxide hetero-structure capacitors on a Si substrate. Nonvolatile ferroelectric random-access memories ex...
Perovskite KNbO 3 thin films were heteroepitaxially deposited onto (100) MgO substrates. Twin dom... more Perovskite KNbO 3 thin films were heteroepitaxially deposited onto (100) MgO substrates. Twin domains with tetrahedral shape were typically observed. These tetrahedrons were bounded by three {211} twin planes. High resolution transmission electron microscopy (HRTEM) was employed to examine these {211} twin boundaries. Surface steps of {110}<110> type generated by dislocation slip were present on the MgO substrate. The tetrahedral twin domains originate on surface steps, then grow with a stacking fault relationship to the matrix. The strain fields of dislocations near the stacking faults slightly rotate the tetrahedral twin nuclei. This small degree of misalignment between the matrix and the twin domain result in some of the twin boundaries having amorphous boundary regions rather than coherent interfaces.Order-disorder antiphase domains (APD's) were directly imaged with HRTEM. Ultra small APD's ranging from 10 to 30 atomic spacings were observed. The origin of these AP...
Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics
A potassium niobate thin film waveguide is an ideal candidate for producing a compact blue laser ... more A potassium niobate thin film waveguide is an ideal candidate for producing a compact blue laser source by second harmonic generation. However, good epitaxial quality films are difficult to produce and high optical losses are a continuing problem. A report is presented in this paper on the investigations of the microstructural and optical properties of KNbO3 thin films to better
KNbO3 possesses high nonlinear optical coefficients making it a promising material for frequency ... more KNbO3 possesses high nonlinear optical coefficients making it a promising material for frequency conversion of infrared light into the visible wavelength range using integrated optical devices. While epitaxial thin films of KNbO3 have previously been grown using ion beam sputtering, defects (i.e. grain boundaries, domains, surface roughness) in these films resulted in high optical losses and no measurable in-plane birefringence. Previous films were grown on MgO substrates, which have a >4% lattice mismatch with KNbO3. In the work reported here, we have grown films on MgO, MgA12O4, NdGaO3, and KTaO3 to investigate the role of lattice mismatch on the resulting film quality. Films have also been grown with and without oxygen ion assistance. The orientations, morphologies, and defects in the films were examined using x-ray diffraction and AFM to determine their relationships to the growth conditions and substrate lattice mismatch.
Ferroelectric films are typically deposited by a variety of techniques, the two most common being... more Ferroelectric films are typically deposited by a variety of techniques, the two most common being chemical methods (sol-gel, metalorganic decomposition) and sputtering. In this paper we briefly review the sputtering techniques, and then discuss ion beam sputter deposition in greater detail. In particular, ion beam sputter deposition of epitaxial lead zirconate titanate (PZT) films is described. It is shown that
Lower electrodes for Pb(Zr, Ti)O3 (PZT) used in ferroelectric random access memories must have go... more Lower electrodes for Pb(Zr, Ti)O3 (PZT) used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film. We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, Pt/Ti, RuO2, ReO3, and CoSi23N4, all on SiO2/Si; and
Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition... more Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition system which features a rotating target holder with BaO2, CuO, and Y2O3 as the sputtering targets. The dwell time of the ion beam on each oxide target is determined by a computer-controlled feedback loop using the signal from a programmable quartz crystal resonator. The sputtered fluxes of all film components originate from the same spatial location, ensuring homogeneous film composition. The results presented demonstrate for the first time an automated ion beam sputter deposition system with the capability of producing high Tc superconducting films by controlled sputtering of either elemental metallic components or oxide precursors. The concept may be extended to include processes such as patterning, production of layered structures (junctions), and film encapsulation necessary for microcircuit manufacturing based on high Tc superconducting films.
<jats:title>Abstract</jats:title> <jats:p>This paper focuses on describing the ... more <jats:title>Abstract</jats:title> <jats:p>This paper focuses on describing the integration of ultrananocrystalline diamond (UNCD) coating on pure titanium-based dental implants (DIs) integrated with the surface pre-treatment by chemical-mechanical nano-structuring (CMNS) process. The combination of the UNCD coating with the CMNS metal surface treatment provides a transformational process to produce a new generation of metallic implants. CMNS promotes a uniform and dense titanium oxide interface and UNCD enables higher resistance to chemical-induced corrosion by oral fluids and enhanced bone attachment due to superior bone cell growth on C atoms (element of life in human DNA and cell). The main focus of the presented research is to establish the preliminary studies on the integration of the UNCD coating process on CMNS treated dental implants to promote corrosion resistance and biocompatibility. It is demonstrated that the CMNS process in the presence of an oxidizer (1M to be optimal) induces a tailored interface to promote UNCD coating capability through effective interface passivation leading to uniform surface coverage. The final implant product is observed to have improved corrosion potential and enhanced hydrophobicity indicating better biocompatibility providing the basis for a new generation of superior DIs. The findings can further be extended to the hip, knee, and other orthopedic metallic implants, which require major performance improvements, particularly in reducing or eliminating in-vivo body fluid-induced chemical corrosion.</jats:p>
2019 7th International Engineering, Sciences and Technology Conference (IESTEC)
The combined effect of total gas pressure (20-80 mbar), precursor gas chemistry (Ar/CH4/H2) and m... more The combined effect of total gas pressure (20-80 mbar), precursor gas chemistry (Ar/CH4/H2) and microwave power on the grain size and growth rate of polycrystalline diamond films, grown by MPCVD, was investigated. The key findings are: 1) Grain size of polycrystalline diamond films depends critically on the total gas pressure such that a minimum pressure of 60 mbar is needed to grow nanocrystalline diamond films (grain size of 100s of nanometers) even when using a hydrogen rich gas chemistry (98% H2, 2% CH4); 2) For a fixed gas pressure, the grain size of polycrystalline diamond films increases as the H2 concentration increases, and decreases as the Ar concentration decreases, resulting in a maximum grain size for Ar 0%/CH4 2%, H2 98% gas mixture and a minimum grain size for Ar 98%/CH4 2%, H2 0% gas mixture; 3) The microwave power (1900-2500 W) effect on grain size and growth rate.
펄스 레이저 아브레이션 법으로 스트론튬 비스무스 탄탈룸 산화물 박막을 제조하였다. 저온 성장, 후 열처리에 의해서 백금 (111) 면 위에 다결정 층상 페로브스카이트 구조를 ... more 펄스 레이저 아브레이션 법으로 스트론튬 비스무스 탄탈룸 산화물 박막을 제조하였다. 저온 성장, 후 열처리에 의해서 백금 (111) 면 위에 다결정 층상 페로브스카이트 구조를 형성하였다. 하부 백금 전극으로 비스무스가 확산 침투하였고, 보호막 티타늄이 스트론튬 비스무스 탄탈륨 박막 층으로 확산 침투하였다. Pt/SrBi₂Ta₂O 9 /Pt 캐패시터 구조에서 스위칭 횟수 10 11 회까지 파티그 현상이 나타나지 않았고, 10 -8 A/cm² 정도의 좋은 누설 전류 특성을 나타내고 있다.
ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated... more ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.
An intense worldwide research-and-development effort has been undertaken during the last seven ye... more An intense worldwide research-and-development effort has been undertaken during the last seven years with the objective of developing thin-film deposition techniques and materials-integration and processing strategies capable of realizing a commercially viable solid-state nonvolatile-ferroelectric-random-access-memory (NVFRAM) technology. Many laboratories around the world have focused their work on developing strategies for integrating submicron thin-film ferroelectric capacitors with the mature silicon-based transistor technology to yield capacitor-transistor-based memory architectures as schematically illustrated in Figure 1. This figure also shows the perovskite unit cell of a capacitor, based on a ferroelectric Pb(ZrxTi 1−xO3 (PZT) layer, and the variety of structural, chemical, electronic, and ionic interfaces that arise during the fabrication and integration of these metal-oxide hetero-structure capacitors on a Si substrate. Nonvolatile ferroelectric random-access memories ex...
Perovskite KNbO 3 thin films were heteroepitaxially deposited onto (100) MgO substrates. Twin dom... more Perovskite KNbO 3 thin films were heteroepitaxially deposited onto (100) MgO substrates. Twin domains with tetrahedral shape were typically observed. These tetrahedrons were bounded by three {211} twin planes. High resolution transmission electron microscopy (HRTEM) was employed to examine these {211} twin boundaries. Surface steps of {110}<110> type generated by dislocation slip were present on the MgO substrate. The tetrahedral twin domains originate on surface steps, then grow with a stacking fault relationship to the matrix. The strain fields of dislocations near the stacking faults slightly rotate the tetrahedral twin nuclei. This small degree of misalignment between the matrix and the twin domain result in some of the twin boundaries having amorphous boundary regions rather than coherent interfaces.Order-disorder antiphase domains (APD's) were directly imaged with HRTEM. Ultra small APD's ranging from 10 to 30 atomic spacings were observed. The origin of these AP...
Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics
A potassium niobate thin film waveguide is an ideal candidate for producing a compact blue laser ... more A potassium niobate thin film waveguide is an ideal candidate for producing a compact blue laser source by second harmonic generation. However, good epitaxial quality films are difficult to produce and high optical losses are a continuing problem. A report is presented in this paper on the investigations of the microstructural and optical properties of KNbO3 thin films to better
KNbO3 possesses high nonlinear optical coefficients making it a promising material for frequency ... more KNbO3 possesses high nonlinear optical coefficients making it a promising material for frequency conversion of infrared light into the visible wavelength range using integrated optical devices. While epitaxial thin films of KNbO3 have previously been grown using ion beam sputtering, defects (i.e. grain boundaries, domains, surface roughness) in these films resulted in high optical losses and no measurable in-plane birefringence. Previous films were grown on MgO substrates, which have a >4% lattice mismatch with KNbO3. In the work reported here, we have grown films on MgO, MgA12O4, NdGaO3, and KTaO3 to investigate the role of lattice mismatch on the resulting film quality. Films have also been grown with and without oxygen ion assistance. The orientations, morphologies, and defects in the films were examined using x-ray diffraction and AFM to determine their relationships to the growth conditions and substrate lattice mismatch.
Ferroelectric films are typically deposited by a variety of techniques, the two most common being... more Ferroelectric films are typically deposited by a variety of techniques, the two most common being chemical methods (sol-gel, metalorganic decomposition) and sputtering. In this paper we briefly review the sputtering techniques, and then discuss ion beam sputter deposition in greater detail. In particular, ion beam sputter deposition of epitaxial lead zirconate titanate (PZT) films is described. It is shown that
Lower electrodes for Pb(Zr, Ti)O3 (PZT) used in ferroelectric random access memories must have go... more Lower electrodes for Pb(Zr, Ti)O3 (PZT) used in ferroelectric random access memories must have good electrical conductivity and must interact as little as possible with the PZT film. We have evaluated a number of bottom electrodes for use with PZT films deposited by ion beam sputter deposition These electrodes include Pt, Pt/Ti, RuO2, ReO3, and CoSi23N4, all on SiO2/Si; and
Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition... more Superconducting films of YBa2Cu3O7−δ have been synthesized in a novel ion beam sputter deposition system which features a rotating target holder with BaO2, CuO, and Y2O3 as the sputtering targets. The dwell time of the ion beam on each oxide target is determined by a computer-controlled feedback loop using the signal from a programmable quartz crystal resonator. The sputtered fluxes of all film components originate from the same spatial location, ensuring homogeneous film composition. The results presented demonstrate for the first time an automated ion beam sputter deposition system with the capability of producing high Tc superconducting films by controlled sputtering of either elemental metallic components or oxide precursors. The concept may be extended to include processes such as patterning, production of layered structures (junctions), and film encapsulation necessary for microcircuit manufacturing based on high Tc superconducting films.
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Papers by Orlando Auciello