Canadian Journal of Physiology and Pharmacology, 1999
We studied whether thiopental affects endothelial nitric oxide dependent vasodilator responses an... more We studied whether thiopental affects endothelial nitric oxide dependent vasodilator responses and nitrite production (an indicator of nitric oxide production) elicited by acetylcholine, histamine, and A23187 in rat aorta (artery in which nitric oxide is the main endothelial relaxant factor). In addition, we evaluated the barbiturate effect on nitric oxide synthase (NOS) activity in both rat aorta and kidney homogenates. Thiopental (10-100 microg/mL) reversibly inhibited the endothelium-dependent relaxation elicited by acetylcholine, histamine, and A23187. On the contrary, this anesthetic did not modify the endothelium-independent but cGMP-dependent relaxation elicited by sodium nitroprusside (1 nM - 1 microM) and nitroglycerin (1 nM - 1 microM), thus excluding an effect of thiopental on guanylate cyclase of vascular smooth muscle. Thiopental (100 microg/mL) inhibited both basal (87.8+/-14.3%) and acetylcholine- or A23187-stimulated (78.6+/-3.9 and 39.7+/-5.6%, respectively) production of nitrites in aortic rings. In addition the barbiturate inhibited (100 microg/mL) the NOS (45+/-4 and 42.8+/-9%) in aortic and kidney homogenates, respectively (measured as 14C-labeled citrulline production). In conclusion, thiopental inhibition of endothelium-dependent relaxation and nitrite production in aortic rings strongly suggests an inhibitory effect on NOS. Thiopental inhibition of the NOS provides further support to this contention.
The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples imp... more The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that about +0.4 Si interstitials are generated per implanted F+ ion, in agreement with the value resulting from the net separation of Frenkel pairs. For short annealings, B diffusion is lower when F+
Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B c... more Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×10 20 cm -3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high
International Symposium on High-Performance Computer Architecture, 1999
Deadlock detection is one of the most important design issues in recovery strategies for routing ... more Deadlock detection is one of the most important design issues in recovery strategies for routing in interconnection networks. In a previous paper, we presented an efficient deadlock detection mechanism. This mechanism requires that when a message header blocks it must be quickly notified to all the channels reserved by that message. To achieve this goal, the detection mechanism uses the
Networks on chip (NoCs) has a strong impact on overall chip performance. Interconnection bandwidt... more Networks on chip (NoCs) has a strong impact on overall chip performance. Interconnection bandwidth is limited by the critical path delay. Recent works show that the critical path includes the switch input buffer control logic. As a consequence, by removing buffers, ...
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011
Abstract Ion implantation is a technique commonly used in the fabrication of semiconductor device... more Abstract Ion implantation is a technique commonly used in the fabrication of semiconductor devices. The introduction of ions generates a large concentration of defects in the Si lattice. The presence of these defects can adversely affect the device performance. Conversely, ...
2003 International Conference on Parallel Processing, 2003. Proceedings., 2003
InfiniBand is an interconnect standard for communication between processing nodes and I/O devices... more InfiniBand is an interconnect standard for communication between processing nodes and I/O devices as well as for interprocessor communication (NOWs). The InfiniBand architecture (IBA) defines a switch-based network with point-to-point links whose topology can be established by the customer. When the performance is the primary concern regular topologies are preferred. Low-dimensional tori (2D and 3D) are some of the regular
ABSTRACT We have used atomistic simulations to analyze differences experimentally observed in dam... more ABSTRACT We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.
Page 1. Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions i... more Page 1. Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions in Si through Ion Irradiation. Iván Santos a , Luis Alberto Marqués, Lourdes Pelaz, Pedro Lopez, and María Aboy. Departamento ...
Canadian Journal of Physiology and Pharmacology, 1999
We studied whether thiopental affects endothelial nitric oxide dependent vasodilator responses an... more We studied whether thiopental affects endothelial nitric oxide dependent vasodilator responses and nitrite production (an indicator of nitric oxide production) elicited by acetylcholine, histamine, and A23187 in rat aorta (artery in which nitric oxide is the main endothelial relaxant factor). In addition, we evaluated the barbiturate effect on nitric oxide synthase (NOS) activity in both rat aorta and kidney homogenates. Thiopental (10-100 microg/mL) reversibly inhibited the endothelium-dependent relaxation elicited by acetylcholine, histamine, and A23187. On the contrary, this anesthetic did not modify the endothelium-independent but cGMP-dependent relaxation elicited by sodium nitroprusside (1 nM - 1 microM) and nitroglycerin (1 nM - 1 microM), thus excluding an effect of thiopental on guanylate cyclase of vascular smooth muscle. Thiopental (100 microg/mL) inhibited both basal (87.8+/-14.3%) and acetylcholine- or A23187-stimulated (78.6+/-3.9 and 39.7+/-5.6%, respectively) production of nitrites in aortic rings. In addition the barbiturate inhibited (100 microg/mL) the NOS (45+/-4 and 42.8+/-9%) in aortic and kidney homogenates, respectively (measured as 14C-labeled citrulline production). In conclusion, thiopental inhibition of endothelium-dependent relaxation and nitrite production in aortic rings strongly suggests an inhibitory effect on NOS. Thiopental inhibition of the NOS provides further support to this contention.
The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples imp... more The F effect in crystalline Si is quantified by monitoring defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that about +0.4 Si interstitials are generated per implanted F+ ion, in agreement with the value resulting from the net separation of Frenkel pairs. For short annealings, B diffusion is lower when F+
Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B c... more Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×10 20 cm -3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high
International Symposium on High-Performance Computer Architecture, 1999
Deadlock detection is one of the most important design issues in recovery strategies for routing ... more Deadlock detection is one of the most important design issues in recovery strategies for routing in interconnection networks. In a previous paper, we presented an efficient deadlock detection mechanism. This mechanism requires that when a message header blocks it must be quickly notified to all the channels reserved by that message. To achieve this goal, the detection mechanism uses the
Networks on chip (NoCs) has a strong impact on overall chip performance. Interconnection bandwidt... more Networks on chip (NoCs) has a strong impact on overall chip performance. Interconnection bandwidth is limited by the critical path delay. Recent works show that the critical path includes the switch input buffer control logic. As a consequence, by removing buffers, ...
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011
Abstract Ion implantation is a technique commonly used in the fabrication of semiconductor device... more Abstract Ion implantation is a technique commonly used in the fabrication of semiconductor devices. The introduction of ions generates a large concentration of defects in the Si lattice. The presence of these defects can adversely affect the device performance. Conversely, ...
2003 International Conference on Parallel Processing, 2003. Proceedings., 2003
InfiniBand is an interconnect standard for communication between processing nodes and I/O devices... more InfiniBand is an interconnect standard for communication between processing nodes and I/O devices as well as for interprocessor communication (NOWs). The InfiniBand architecture (IBA) defines a switch-based network with point-to-point links whose topology can be established by the customer. When the performance is the primary concern regular topologies are preferred. Low-dimensional tori (2D and 3D) are some of the regular
ABSTRACT We have used atomistic simulations to analyze differences experimentally observed in dam... more ABSTRACT We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.
Page 1. Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions i... more Page 1. Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions in Si through Ion Irradiation. Iván Santos a , Luis Alberto Marqués, Lourdes Pelaz, Pedro Lopez, and María Aboy. Departamento ...
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