In this present paper, an FE approach has been presented for the elastic bending and buckling beh... more In this present paper, an FE approach has been presented for the elastic bending and buckling behaviors of single-walled carbon nanotubes (SWCNTs). Finite element simulations are carried out to investigate the bending deformations and buckling behaviors of SWCNTs under various conditions. Both axial compression and bending loading conditions are considered. The computed results for SWCNTs agree well with atomistic simulations in the literature and the FE approach is confirmed successfully. In this paper, the steady state structural analysis has been performed to know the strength of the CNTs using shell93 element. For analysis of SWCNT has been considered as cantilever beam and loaded at the free end. SWCNTs with different lengths, different thicknesses under various materials and loadings have been studied. In static analysis, the defections and stress induced are estimated due to axial and bending loads. Under buckling analysis, the buckling factors and corresponding mode shapes a...
Though semiconductor technology has advanced significantly in miniaturization and processor speed... more Though semiconductor technology has advanced significantly in miniaturization and processor speed the “ideal” nonvolatile memory - memory that retains information even when the power goes is still elusive. There is a large demand for non-volatile memories with the popularity of portable electronic devices like cell phones and note books. Semiconductor memories like SRAMs and DRAMs are available but, such memories are volatile. After the advent of ferroelectricity many materials with crystal structures of Perovskite, pyrochlore and tungsten bronze have been derived and studied for the applications in memory devices. Ferroelectric Random Access Memories (FeRAM) are most promising. They are nonvolatile and have the greater radiation hardness and higher speed. These devices use the switchable spontaneous polarization arising suitable positional bi-stability of constituent ions and store the information in the form of charge. This paper is focused on the synthesis and characterizations o...
In this present paper, an FE approach has been presented for the elastic bending and buckling beh... more In this present paper, an FE approach has been presented for the elastic bending and buckling behaviors of single-walled carbon nanotubes (SWCNTs). Finite element simulations are carried out to investigate the bending deformations and buckling behaviors of SWCNTs under various conditions. Both axial compression and bending loading conditions are considered. The computed results for SWCNTs agree well with atomistic simulations in the literature and the FE approach is confirmed successfully. In this paper, the steady state structural analysis has been performed to know the strength of the CNTs using shell93 element. For analysis of SWCNT has been considered as cantilever beam and loaded at the free end. SWCNTs with different lengths, different thicknesses under various materials and loadings have been studied. In static analysis, the defections and stress induced are estimated due to axial and bending loads. Under buckling analysis, the buckling factors and corresponding mode shapes a...
Though semiconductor technology has advanced significantly in miniaturization and processor speed... more Though semiconductor technology has advanced significantly in miniaturization and processor speed the “ideal” nonvolatile memory - memory that retains information even when the power goes is still elusive. There is a large demand for non-volatile memories with the popularity of portable electronic devices like cell phones and note books. Semiconductor memories like SRAMs and DRAMs are available but, such memories are volatile. After the advent of ferroelectricity many materials with crystal structures of Perovskite, pyrochlore and tungsten bronze have been derived and studied for the applications in memory devices. Ferroelectric Random Access Memories (FeRAM) are most promising. They are nonvolatile and have the greater radiation hardness and higher speed. These devices use the switchable spontaneous polarization arising suitable positional bi-stability of constituent ions and store the information in the form of charge. This paper is focused on the synthesis and characterizations o...
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Papers by Ratnakar Pandu