In this work we report first results of successful conversion of Hevel LLC micromorph production ... more In this work we report first results of successful conversion of Hevel LLC micromorph production line to Si HJ technology with production kicked-off in Q1 2017. Implementation of in-house Si HJ cell technology developed by R&D Center TFTE using Gen5 (1.4 m2) KAI PECVD reactors with rear emitter bifacial cell design, O3 based IPA free texturing technology from Singulus, PVD tools and SmartWire module assembly line from Meyer Burger allowed to reach average cell efficiency of 21,7% with respective average 60 cell module power of 300W at production level and cell efficiencies as high as 22,77% at R&D. Achieved average module power after conversion from TF to Si HJ technology has almost doubled the annual line capacity from 97 to 160 MWp.
ABSTRACT The ion beam generation and dynamics of processes in a pulsed straight high-current gas ... more ABSTRACT The ion beam generation and dynamics of processes in a pulsed straight high-current gas discharge at Iow pressures have been studied. The spatial reversal of a longitudinal con-fining magnetic field is used to stabilize a potential jump. The potential difference of 3–10 kV is applied to the discharge gap filled with a preliminary created plasma. Initially, the precathode potential jump is formed and, thereafter, the auasi-steady double layer arises in the region of magnetic field reversal. Potential difference is concentrated in the double layer, where formation of ion and electron beams occur. A current value of the ion beam formed in the double layer is determined by Bohm's current of the plasma in the anode part of discharge gap (J < 0.6 A/cm). The ion beam energy is determined by a value of the potential jump (3–10kV) in the double layer. When the plasma with the density higher than the critical one is formed in the system, the magnetic field reversal is self-consistently suppressed; the double layer is destroyed and ion beam generation ceases.
Charging of dust grains in low-pressure plasmas is reviewed critically. A theory based on the Fok... more Charging of dust grains in low-pressure plasmas is reviewed critically. A theory based on the Fokker-Planck equation and orbital motion limited approximation is proposed. The theory predicts that dust grains can acquire a positive charge in low-pressure electropositive plasmas having a sufficiently high plasma potential, in agreement with experimental observations. It is also shown that variations in the plasma potential (electron temperature) can lead to spatial regions in which grains have opposite charges.
In situ photoluminescence combined with optical emission spectroscopy, effective carrier lifetime... more In situ photoluminescence combined with optical emission spectroscopy, effective carrier lifetime, radio-frequency (RF) and self-bias potential measurements has been used to study plasma-induced damage at the a-Si:H/c-Si interface. Passivated crystalline silicon wafers were exposed to Ar, H2, and Ar-H2 RF plasmas using the same value of RF power and pressure in the range of 80–100 mTorr. The substrate temperature during the plasma exposure was room temperature or 200 C. It is found that Ar-H2 plasma has the most detrimental effect on the photoluminescence intensity/effective carrier lifetime which correlates well with its UV spectrum. After plasma exposure, surface passivation can be recovered by thermal annealing—an effect similar to that observed in the case of light-induced degradation of a-Si:H.
In this work we report first results of successful conversion of Hevel LLC micromorph production ... more In this work we report first results of successful conversion of Hevel LLC micromorph production line to Si HJ technology with production kicked-off in Q1 2017. Implementation of in-house Si HJ cell technology developed by R&D Center TFTE using Gen5 (1.4 m2) KAI PECVD reactors with rear emitter bifacial cell design, O3 based IPA free texturing technology from Singulus, PVD tools and SmartWire module assembly line from Meyer Burger allowed to reach average cell efficiency of 21,7% with respective average 60 cell module power of 300W at production level and cell efficiencies as high as 22,77% at R&D. Achieved average module power after conversion from TF to Si HJ technology has almost doubled the annual line capacity from 97 to 160 MWp.
ABSTRACT The ion beam generation and dynamics of processes in a pulsed straight high-current gas ... more ABSTRACT The ion beam generation and dynamics of processes in a pulsed straight high-current gas discharge at Iow pressures have been studied. The spatial reversal of a longitudinal con-fining magnetic field is used to stabilize a potential jump. The potential difference of 3–10 kV is applied to the discharge gap filled with a preliminary created plasma. Initially, the precathode potential jump is formed and, thereafter, the auasi-steady double layer arises in the region of magnetic field reversal. Potential difference is concentrated in the double layer, where formation of ion and electron beams occur. A current value of the ion beam formed in the double layer is determined by Bohm's current of the plasma in the anode part of discharge gap (J < 0.6 A/cm). The ion beam energy is determined by a value of the potential jump (3–10kV) in the double layer. When the plasma with the density higher than the critical one is formed in the system, the magnetic field reversal is self-consistently suppressed; the double layer is destroyed and ion beam generation ceases.
Charging of dust grains in low-pressure plasmas is reviewed critically. A theory based on the Fok... more Charging of dust grains in low-pressure plasmas is reviewed critically. A theory based on the Fokker-Planck equation and orbital motion limited approximation is proposed. The theory predicts that dust grains can acquire a positive charge in low-pressure electropositive plasmas having a sufficiently high plasma potential, in agreement with experimental observations. It is also shown that variations in the plasma potential (electron temperature) can lead to spatial regions in which grains have opposite charges.
In situ photoluminescence combined with optical emission spectroscopy, effective carrier lifetime... more In situ photoluminescence combined with optical emission spectroscopy, effective carrier lifetime, radio-frequency (RF) and self-bias potential measurements has been used to study plasma-induced damage at the a-Si:H/c-Si interface. Passivated crystalline silicon wafers were exposed to Ar, H2, and Ar-H2 RF plasmas using the same value of RF power and pressure in the range of 80–100 mTorr. The substrate temperature during the plasma exposure was room temperature or 200 C. It is found that Ar-H2 plasma has the most detrimental effect on the photoluminescence intensity/effective carrier lifetime which correlates well with its UV spectrum. After plasma exposure, surface passivation can be recovered by thermal annealing—an effect similar to that observed in the case of light-induced degradation of a-Si:H.
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Papers by S. Abolmasov
damage at the a-Si:H/c-Si interface. Passivated crystalline silicon wafers were exposed to Ar, H2, and Ar-H2 RF plasmas using the same value of RF power and pressure in the range of 80–100 mTorr. The substrate temperature during the plasma exposure was room temperature or 200 C. It is found that Ar-H2 plasma has the most detrimental effect on the photoluminescence intensity/effective carrier lifetime which correlates well with its UV spectrum. After plasma exposure, surface passivation can be recovered by thermal annealing—an effect similar to that observed in the case of light-induced degradation of a-Si:H.
damage at the a-Si:H/c-Si interface. Passivated crystalline silicon wafers were exposed to Ar, H2, and Ar-H2 RF plasmas using the same value of RF power and pressure in the range of 80–100 mTorr. The substrate temperature during the plasma exposure was room temperature or 200 C. It is found that Ar-H2 plasma has the most detrimental effect on the photoluminescence intensity/effective carrier lifetime which correlates well with its UV spectrum. After plasma exposure, surface passivation can be recovered by thermal annealing—an effect similar to that observed in the case of light-induced degradation of a-Si:H.