Methodologies have been evolved to grow optical quality nanostructures of the 3.4 eV band-gap sem... more Methodologies have been evolved to grow optical quality nanostructures of the 3.4 eV band-gap semiconductor ZnO and its doped variants with different orders of dimensionality. These nanostructures are versatile and yet under evolution for next generation UV-blue photonic and spin-photonic devices. There are pending lacunae such as reliable and enduring p-type carrier doping and large carrier mobility etc, which need
ABSTRACT We report on the synthesis and characterization of vapor phase grown zinc oxide nanorod ... more ABSTRACT We report on the synthesis and characterization of vapor phase grown zinc oxide nanorod arrays on sputtered aluminum-doped zinc oxide substrates. These arrays can serve as nanostructured electrodes for P3HT:PCBM solar cells, possibly improving their photovoltaic performance.
Incorporating tailored nanostructures into solar cells is a promising way to improve their photov... more Incorporating tailored nanostructures into solar cells is a promising way to improve their photovoltaic conversion efficiency. For such solar cells, sputtered indium-doped tin oxide on glass is the standard substrate. As the global resources of indium are very limited, there is the challenge to ...
Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type... more Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type ZnO single crystal nanorods have been perpendicularly grown on p-GaN/Al2O3 substrates with a vapor phase transport growth method. The low temperature photoluminescence measurements of the n-ZnO nanorods show dominant In-related neutral donor bound exciton emission in the ultraviolet region. Electrical transport measurements performed on single
The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanor... more The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanorods were analyzed under ambient conditions and in the chamber of a scanning electron microscope under high-vacuum conditions. Under ambient conditions, the threshold voltage and conductivity may depend strongly on the details of the measurement procedure as the chosen gate voltage range and gate voltage sweep direction.
Methodologies have been evolved to grow optical quality nanostructures of the 3.4 eV band-gap sem... more Methodologies have been evolved to grow optical quality nanostructures of the 3.4 eV band-gap semiconductor ZnO and its doped variants with different orders of dimensionality. These nanostructures are versatile and yet under evolution for next generation UV-blue photonic and spin-photonic devices. There are pending lacunae such as reliable and enduring p-type carrier doping and large carrier mobility etc, which need
ABSTRACT We report on the synthesis and characterization of vapor phase grown zinc oxide nanorod ... more ABSTRACT We report on the synthesis and characterization of vapor phase grown zinc oxide nanorod arrays on sputtered aluminum-doped zinc oxide substrates. These arrays can serve as nanostructured electrodes for P3HT:PCBM solar cells, possibly improving their photovoltaic performance.
Incorporating tailored nanostructures into solar cells is a promising way to improve their photov... more Incorporating tailored nanostructures into solar cells is a promising way to improve their photovoltaic conversion efficiency. For such solar cells, sputtered indium-doped tin oxide on glass is the standard substrate. As the global resources of indium are very limited, there is the challenge to ...
Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type... more Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type ZnO single crystal nanorods have been perpendicularly grown on p-GaN/Al2O3 substrates with a vapor phase transport growth method. The low temperature photoluminescence measurements of the n-ZnO nanorods show dominant In-related neutral donor bound exciton emission in the ultraviolet region. Electrical transport measurements performed on single
The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanor... more The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanorods were analyzed under ambient conditions and in the chamber of a scanning electron microscope under high-vacuum conditions. Under ambient conditions, the threshold voltage and conductivity may depend strongly on the details of the measurement procedure as the chosen gate voltage range and gate voltage sweep direction.
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Papers by J. Sartor