ABSTRACT We present a systematic study of Si dopant implantation and activation in p-type In0.53G... more ABSTRACT We present a systematic study of Si dopant implantation and activation in p-type In0.53Ga0.47As in an attempt to optimize the source and drain regions of an n-channel III-V metal–oxide–semiconductor field-effect transistor. Test structures based on the transfer length method were fabricated on Si-implanted p-In0.53Ga0.47As/p-InP buffer/semi-insulting InP. A Doehlert design of experiment (DOE) was used to investigate the effect of annealing temperature and time on the electrical properties of the samples. The DOE covered an experimental domain of 625–725 °C and 15–45 s. The current–voltage characteristics of all tested structures exhibited excellent ohmic behavior. The DOE revealed a minimum sheet resistance of (195.6 ± 3.4) Ω/□ for an optimum anneal condition of 715 °C for 32 s. Nonalloyed Au/Ge/Au/Ni/Au contacts, on the sample annealed at 675 °C for 30 s (center point of the experimental domain), exhibited a low specific contact resistance of (7.4 ± 4.5) × 10−7 Ω cm2. The sample annealed at 675 °C for 30 s was further investigated using secondary ion mass spectrometry (SIMS) and cross-sectional transmission electron microscopy (XTEM) analyses. SIMS revealed that Si ions did not diffuse with annealing, while XTEM showed the formation of characteristic loop defects potentially responsible for the sheet resistance and specific contact resistance degradation.
Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scal... more Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008
We combine electron beam lithography (EBL) with conventional microscale metal deposition and etch... more We combine electron beam lithography (EBL) with conventional microscale metal deposition and etch process technologies, to fabricate bolometer devices with nanoscale feature critical dimensions (CDs). We report the creation of titanium (Ti) bolometer devices with 70 nm minimum feature CDs, and total bolometer film thicknesses ranging between 40 nm and 120 nm. Our new nanobolometer devices integrate with conventional CMOS
... RA Camps, JE Evetts, BA Glowacki * , SB Newcomb, RE Somekh & WM Stobbs. ... There is pers... more ... RA Camps, JE Evetts, BA Glowacki * , SB Newcomb, RE Somekh & WM Stobbs. ... There is persuasive evidence, however, that low critical currents are not an inherent characteristic of the material 4,5 , and recent work on thin epitaxial films 6 has indicated that values as high as 10 ...
In this paper we present our development of a SF 6 /Cl 2 -based plasma etch recipe for a LAM Rese... more In this paper we present our development of a SF 6 /Cl 2 -based plasma etch recipe for a LAM Research 4720 etch chamber. Our tungsten plasma etch recipe is used to pattern nanoscale resistor features integrated within a novel IR sensor process. We characterised the ...
The observation of spontaneous oscillations in current during the anodization of InP in relativel... more The observation of spontaneous oscillations in current during the anodization of InP in relatively high concentrations of KOH electrolytes is reported. Oscillations were observed under potential sweep and constant potential conditions. Well-defined oscillations are observed during linear potential sweeps of InP in 5 mol dm(-)(3) KOH to potentials above approximately 1.7 V (SCE) at scan rates in the range of 50 to 500 mV s(-)(1). The oscillations observed exhibit an asymmetrical current versus potential profile, and the charge per cycle was found to increase linearly with potential. More complex oscillatory behavior was observed under constant potential conditions. Periodic damped oscillations are observed in high concentrations of electrolyte whereas undamped sinusoidal oscillations are observed in relatively lower concentrations. In both cases, the anodization of InP results in porous InP formation, and the current in the oscillatory region corresponds to the cyclical effective area changes due to pitting dissolution of the InP surface with the coincidental growth of a thick porous In(2)O(3) film.
Since the discovery of high critical temperature superconducting oxides, an important factor pote... more Since the discovery of high critical temperature superconducting oxides, an important factor potentially limiting their technological application has been the typically low value of the critical current density that they can carry. Here are presented the results of a transmission electron microscopy study of sintered YBaâ Cuâ Oââ/sub x/ aimed primarily at the characterization of those elements of the microstructure responsible for the poor current-carrying capacity in the superconducting state. The observations are further discussed in relation both to the flux pinning characteristics required and to the prospect for controlling the microstructure in order to optimize the properties of this material for technological development.
ABSTRACT We present a systematic study of Si dopant implantation and activation in p-type In0.53G... more ABSTRACT We present a systematic study of Si dopant implantation and activation in p-type In0.53Ga0.47As in an attempt to optimize the source and drain regions of an n-channel III-V metal–oxide–semiconductor field-effect transistor. Test structures based on the transfer length method were fabricated on Si-implanted p-In0.53Ga0.47As/p-InP buffer/semi-insulting InP. A Doehlert design of experiment (DOE) was used to investigate the effect of annealing temperature and time on the electrical properties of the samples. The DOE covered an experimental domain of 625–725 °C and 15–45 s. The current–voltage characteristics of all tested structures exhibited excellent ohmic behavior. The DOE revealed a minimum sheet resistance of (195.6 ± 3.4) Ω/□ for an optimum anneal condition of 715 °C for 32 s. Nonalloyed Au/Ge/Au/Ni/Au contacts, on the sample annealed at 675 °C for 30 s (center point of the experimental domain), exhibited a low specific contact resistance of (7.4 ± 4.5) × 10−7 Ω cm2. The sample annealed at 675 °C for 30 s was further investigated using secondary ion mass spectrometry (SIMS) and cross-sectional transmission electron microscopy (XTEM) analyses. SIMS revealed that Si ions did not diffuse with annealing, while XTEM showed the formation of characteristic loop defects potentially responsible for the sheet resistance and specific contact resistance degradation.
Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scal... more Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 2008
We combine electron beam lithography (EBL) with conventional microscale metal deposition and etch... more We combine electron beam lithography (EBL) with conventional microscale metal deposition and etch process technologies, to fabricate bolometer devices with nanoscale feature critical dimensions (CDs). We report the creation of titanium (Ti) bolometer devices with 70 nm minimum feature CDs, and total bolometer film thicknesses ranging between 40 nm and 120 nm. Our new nanobolometer devices integrate with conventional CMOS
... RA Camps, JE Evetts, BA Glowacki * , SB Newcomb, RE Somekh & WM Stobbs. ... There is pers... more ... RA Camps, JE Evetts, BA Glowacki * , SB Newcomb, RE Somekh & WM Stobbs. ... There is persuasive evidence, however, that low critical currents are not an inherent characteristic of the material 4,5 , and recent work on thin epitaxial films 6 has indicated that values as high as 10 ...
In this paper we present our development of a SF 6 /Cl 2 -based plasma etch recipe for a LAM Rese... more In this paper we present our development of a SF 6 /Cl 2 -based plasma etch recipe for a LAM Research 4720 etch chamber. Our tungsten plasma etch recipe is used to pattern nanoscale resistor features integrated within a novel IR sensor process. We characterised the ...
The observation of spontaneous oscillations in current during the anodization of InP in relativel... more The observation of spontaneous oscillations in current during the anodization of InP in relatively high concentrations of KOH electrolytes is reported. Oscillations were observed under potential sweep and constant potential conditions. Well-defined oscillations are observed during linear potential sweeps of InP in 5 mol dm(-)(3) KOH to potentials above approximately 1.7 V (SCE) at scan rates in the range of 50 to 500 mV s(-)(1). The oscillations observed exhibit an asymmetrical current versus potential profile, and the charge per cycle was found to increase linearly with potential. More complex oscillatory behavior was observed under constant potential conditions. Periodic damped oscillations are observed in high concentrations of electrolyte whereas undamped sinusoidal oscillations are observed in relatively lower concentrations. In both cases, the anodization of InP results in porous InP formation, and the current in the oscillatory region corresponds to the cyclical effective area changes due to pitting dissolution of the InP surface with the coincidental growth of a thick porous In(2)O(3) film.
Since the discovery of high critical temperature superconducting oxides, an important factor pote... more Since the discovery of high critical temperature superconducting oxides, an important factor potentially limiting their technological application has been the typically low value of the critical current density that they can carry. Here are presented the results of a transmission electron microscopy study of sintered YBaâ Cuâ Oââ/sub x/ aimed primarily at the characterization of those elements of the microstructure responsible for the poor current-carrying capacity in the superconducting state. The observations are further discussed in relation both to the flux pinning characteristics required and to the prospect for controlling the microstructure in order to optimize the properties of this material for technological development.
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Papers by Simon Newcomb