The performance of on-chip passives and their application at mm-wave frequencies in two key silic... more The performance of on-chip passives and their application at mm-wave frequencies in two key silicon technologies are presented in this paper. Power and linear combiners designed in advanced 130 nm SiGe-BiCMOS and 65 nm CMOS-SOI are used as demonstrators. Multi-port transformer and shielded-CPW-on-SOI power combiners realize insertion loss as low as 0.5 dB and reflected port to port impedance uniformity
A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner fo... more A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner for RF and LO signal summation and impedance transformation is described. Class-AB biasing is employed for low quiescent DC power consumption (360μW at 1.2V). At fLO=58GHz and PLO=0dBm, the Gm-mixer prototype realizes 6.9dB (50Ω) NFDSB, 6.2dB power conversion gain, -4.7dBm input-referred P-1dB, and +4.2dBm IIP3.
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequenci... more Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication is highlighted with emphasis on recently reported innovations and developments from the authors' own work.
A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmis... more A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.
A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage i... more A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage is described. In the 54-59GHz passband, measured amplitude and phase errors are 0.7±0.5dB and ±5°, respectively. Measured |Sn| is <;-18dB from 50-65GHz, and cascoding is used to realize better than 39dB reverse isolation overall. The 0.2×0.19mm2 balun is implemented in 130nm SiGe-BiCMOS, and consumes 10.4mW from a 2V supply.
The performance of on-chip passives and their application at mm-wave frequencies in two key silic... more The performance of on-chip passives and their application at mm-wave frequencies in two key silicon technologies are presented in this paper. Power and linear combiners designed in advanced 130 nm SiGe-BiCMOS and 65 nm CMOS-SOI are used as demonstrators. Multi-port transformer and shielded-CPW-on-SOI power combiners realize insertion loss as low as 0.5 dB and reflected port to port impedance uniformity
A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner fo... more A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner for RF and LO signal summation and impedance transformation is described. Class-AB biasing is employed for low quiescent DC power consumption (360μW at 1.2V). At fLO=58GHz and PLO=0dBm, the Gm-mixer prototype realizes 6.9dB (50Ω) NFDSB, 6.2dB power conversion gain, -4.7dBm input-referred P-1dB, and +4.2dBm IIP3.
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequenci... more Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication is highlighted with emphasis on recently reported innovations and developments from the authors' own work.
A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmis... more A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.
A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage i... more A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage is described. In the 54-59GHz passband, measured amplitude and phase errors are 0.7±0.5dB and ±5°, respectively. Measured |Sn| is <;-18dB from 50-65GHz, and cascoding is used to realize better than 39dB reverse isolation overall. The 0.2×0.19mm2 balun is implemented in 130nm SiGe-BiCMOS, and consumes 10.4mW from a 2V supply.
The performance of on-chip passives and their application at mm-wave frequencies in two key silic... more The performance of on-chip passives and their application at mm-wave frequencies in two key silicon technologies are presented in this paper. Power and linear combiners designed in advanced 130 nm SiGe-BiCMOS and 65 nm CMOS-SOI are used as demonstrators. Multi-port transformer and shielded-CPW-on-SOI power combiners realize insertion loss as low as 0.5 dB and reflected port to port impedance uniformity
A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner fo... more A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner for RF and LO signal summation and impedance transformation is described. Class-AB biasing is employed for low quiescent DC power consumption (360μW at 1.2V). At fLO=58GHz and PLO=0dBm, the Gm-mixer prototype realizes 6.9dB (50Ω) NFDSB, 6.2dB power conversion gain, -4.7dBm input-referred P-1dB, and +4.2dBm IIP3.
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequenci... more Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication is highlighted with emphasis on recently reported innovations and developments from the authors' own work.
A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmis... more A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.
A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage i... more A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage is described. In the 54-59GHz passband, measured amplitude and phase errors are 0.7±0.5dB and ±5°, respectively. Measured |Sn| is <;-18dB from 50-65GHz, and cascoding is used to realize better than 39dB reverse isolation overall. The 0.2×0.19mm2 balun is implemented in 130nm SiGe-BiCMOS, and consumes 10.4mW from a 2V supply.
The performance of on-chip passives and their application at mm-wave frequencies in two key silic... more The performance of on-chip passives and their application at mm-wave frequencies in two key silicon technologies are presented in this paper. Power and linear combiners designed in advanced 130 nm SiGe-BiCMOS and 65 nm CMOS-SOI are used as demonstrators. Multi-port transformer and shielded-CPW-on-SOI power combiners realize insertion loss as low as 0.5 dB and reflected port to port impedance uniformity
A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner fo... more A 60GHz-band doubly-balanced trans- conductance (Gm) mixer with an on-chip linear L-C combiner for RF and LO signal summation and impedance transformation is described. Class-AB biasing is employed for low quiescent DC power consumption (360μW at 1.2V). At fLO=58GHz and PLO=0dBm, the Gm-mixer prototype realizes 6.9dB (50Ω) NFDSB, 6.2dB power conversion gain, -4.7dBm input-referred P-1dB, and +4.2dBm IIP3.
Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequenci... more Silicon technologies are enabling ICs capable of operating at millimeter-wave (mm-wave) frequencies, with advantages in design complexity, functionality and cost compared to III-Vs. The potential for application of deep submicron SiGe-BiCMOS and CMOS-SOI technologies in mm-wave systems is surveyed in this paper. Progress in mm-wave silicon IC development for Gbit/s data rate wireless communication is highlighted with emphasis on recently reported innovations and developments from the authors' own work.
A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmis... more A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.
A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage i... more A wideband mm-wave active balun consisting of a CB/CE input and fully-differential second stage is described. In the 54-59GHz passband, measured amplitude and phase errors are 0.7±0.5dB and ±5°, respectively. Measured |Sn| is <;-18dB from 50-65GHz, and cascoding is used to realize better than 39dB reverse isolation overall. The 0.2×0.19mm2 balun is implemented in 130nm SiGe-BiCMOS, and consumes 10.4mW from a 2V supply.
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