Proceedings of International Electron Devices Meeting
A simple front-gate charge pumping technique has been developed, which enables the measurement of... more A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation
Proceedings of International Electron Devices Meeting
A simple front-gate charge pumping technique has been developed, which enables the measurement of... more A simple front-gate charge pumping technique has been developed, which enables the measurement of interface traps at both the front and the back interfaces of a fully depleted SOI/MOSFET. It is based on the strong coupling between the two interfaces, and its validity has been verified both experimentally and by computer simulation
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Papers by Yujun Li