Avi Karsenty received the PhD degree in Applied Physics/Material Science (Microelectronics and Electro-Optics Divisions) from the Hebrew University of Jerusalem in 2003. His main research focuses on Si nanoscale electro-optics coupled-devices. In Oct’11, after 22 years in High-Tech industries, part of which as Engineer and Manager for 16 years with Intel, he came back to the academy (JCT) with the Vision to build student next generations, and to reinforce the bridge between Academy and Industry. During Oct'14 to Sep'18, he served as the Head of the Physics/Electro-Optics Eng. Dept. and as the Head of the HaEytanim Personal Empowerment Program. Dr. Karsenty is IEEE and OSA Senior Member, and received 40 Awards in Engineering/Physics. He has three main Research Interests: 1) nano-photonics and nano-electronics devices, 2) quality and reliability of nanoscale devices and PICs, 3) enhancement of near-field super-resolution methods.
A new super-resolution method, entitled Near-field Projection Optical Microscopy (NPOM), is prese... more A new super-resolution method, entitled Near-field Projection Optical Microscopy (NPOM), is presented. This novel technique enables the imaging of nanoscale objects without the need for surface scanning, as is usually required in existing methods such as NSOM (near-field scanning optical microscope). The main advantage of the proposed concept, besides the elimination of the need for a mechanical scanning mechanism, is that the full field of regard/view is imaged simultaneously and not point-by-point as in scanning-based techniques. Furthermore, by using compressed sensing, the number of projected patterns needed to decompose the spatial information of the inspected object can be made smaller than the obtainable points of spatial resolution. In addition to the development of mathematical formalism, this paper presents the results of a series of complementary numerical tests, using various objects and patterns, that were performed to verify the accuracy of the reconstruction capabilities. We have also performed a proof of concept experiment to support the numerical formalism.
In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revo... more In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limits of available materials. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element’s indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of recent innovative design geometries has enabled the development of a series of silicon nanophotonics and nanoelectronics devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this comprehensive review is a new,methodical approach showcasing examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications. After presenting stand-alone devices, we discuss concerns, considerations, trends and forecasts regarding their possible integration into nanophotonics modules and platforms.
Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurati... more Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurations and usages, an original, cross-checking approach of combining analytical, experimental and numerical methods is presented to serve as a simple unified package for determining electrical resistivity. After a successful comparison based on error analysis between the different results, a robust correction of the analytical model is presented to extract the electrical resistivity from simulations results. Moreover, we present original results from a selection of models and measurements of resistivity applied to germanium samples sharing non-ideal geometries.
A thorough understanding of biological species and emerging nanomaterials requires, among other e... more A thorough understanding of biological species and emerging nanomaterials requires, among other efforts, their in-depth characterization through optical techniques capable of nanoresolution. Nanoscopy techniques based on tip-enhanced optical effects have gained tremendous interest over the past years, given their potential to obtain optical information with resolutions limited only by the size of a sharp probe interacting with focused light, irrespective of the illumination wavelength. Although their popularity and number of applications is rising, tip-enhanced nanoscopy (TEN) techniques still largely rely on probes that are not specifically developed for such applications, but for atomic force microscopy. This limits their potential in many
regards, e.g., in terms of signal-to-noise ratio, attainable image quality, or extent of applications. We take the first steps toward next-generation TEN by demonstrating the fabrication and modeling of specialized TEN probes with known optical properties. The proposed framework is highly flexible and can be easily adjusted to be used with diverse TEN techniques, building on various concepts and phenomena, significantly augmenting their function. Probes with known optical properties could potentially enable faster and more accurate imaging via different routes, such as direct signal enhancement or facile and ultrafast optical signal modulation. We consider that the reported development can pave the way for a vast number of novel TEN imaging protocols and applications, given the many advantages that it offers.
As part of the performance characterization of a combined and enhanced new AFM-NSOM tip photo-det... more As part of the performance characterization of a combined and enhanced new AFM-NSOM tip photo-detector, diffraction limitations were studied on two complementary samples: a nano-barrier embedded between two nano-apertures and one nano-aperture embedded between two nano-barriers. These consecutive multiple-obstacle scanning paths are part of this challenging specifications study of a new conical-shaped and drilled tip-photodetector, sharing a subwavelength aperture. A super-resolution algorithm feature was added in order to overcome possible obstacles, while scanning the same object with several small angles. The new multi-mode system includes scanning topography, optical imaging and an obstacle-overcoming algorithm. The present article study emphasizes the complexity of nano-scanning multiple-apertures/barriers. Both complementary analytical (Python) and numerical (Comsol) analyses are presented to forecast the expected scanning behavior and limitations.
Moreover, in addition to a new concept of a combined AFM-NSOM drilled photo-sensor tip, several breakthroughs are presented in the algorithm itself: treatment of one unique pixel, angular scanning and reconstruction of sub-wavelength information. The uniqueness of the present study lies in its provision of a comprehensive solution to near field scanning: a paired hardware and software package solution.
The analysis of low temperature modulated photoluminescence as a function of the dopant concentra... more The analysis of low temperature modulated photoluminescence as a function of the dopant concentration is presented for GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW). Such variation can enable optical pumping and Inter-Sub-Band Transitions (ISBT). Moreover, while using external trigger, like CO2 laser, controlled electron concentration dependent photoluminescence is measured. As a function of the reaction time of the transition phenomenon (absorption and relaxation), and of its intensity, one can use such special structure for the benefit of electro-optical communication at the nanoscale range. Numerical and experimental results match, and the method can be used towards the integration of AQW in advanced devices.
A polarizer transistor sharing a groove filtering aperture was developed. In the device, entitled... more A polarizer transistor sharing a groove filtering aperture was developed. In the device, entitled Silicon-On-Insulator Photo-Polarized Activated Modulator (SOIP 2 AM), one could think that the larger the V-groove, the higher is the absorbed illumination, and consequently the higher is the amount of new generated pairs of electrons-holes inside the device. In fact, the higher the illumination, the higher the destructive interference points inside the V-groove. Establishing a strong correlation between electrical and optical phenomena, two physical assumptions are presented. The first one is that observed "hot spots" (i.e. intense electrical field areas), are in fact the mirror of optical constructive interferences near the walls of the V-groove. The second assumption is that the closer the hot spots near the wall, the higher the generation of pairs of electrons-holes, since more absorbed photons. A new method, based on analytical hybrid optical model (Snell, Fresnel, Fourier, Energy Conservation), and numerical simulations, enabled to mathematically identify these phenomena, in order to optimize the modulator, as a function of several physical parameters such as the aperture angle, the groove's depth, the groove's shape (rectangular, triangular, rounded and parabolic), the light polarized direction, and the beam wavelength. Moreover, in order to optimize the absorption of the polarized illumination, several solutions are proposed. The present case study and proposed adapted solution can serve as a basis of generic approach in sensors' activation towards optimized polarized beam absorption.
The functionality of a nanoscale silicon-based optoelectronic modulator is deeply analyzed while ... more The functionality of a nanoscale silicon-based optoelectronic modulator is deeply analyzed while it appears that two competing processes, thermal and photonic, are occurring at the same time, and are preventing the optimization of the electro-optics coupling. While an incident illumination-beam first process is translated into photons, generating pairs of electrons–holes, a second process of thermal generation, creating phonons enables a loss of energy. Complementary studies, combining strong analytical models and numerical simulations, enabled to better understand this competition between photonic and thermal activities, in order to optimize the modulator. Moreover, in order to prevent unnecessary heating effects and to present a proposed solution, a picosecond pulsed laser is suggested and demonstrated as the ultimate solution so no energy will be wasted in heat, and still the photonic energy will be fully used. First ever-analytical solution to the heating produced due to the las...
Abstract A time dependent evaluation method is presented in order to visualize the changing behav... more Abstract A time dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature, electron concentration and electrical potential in semiconductor materials. If well-known experimental standard methods enable solid measurements and results, animated time-dependent simulations enable a good step-by-step follow-up of the mechanisms. An original combination of three complementary methods (analytical, numerical and experimental) is presented here as an exhaustive package to extract the Seebeck coefficient of Germanium using the Hot-Probe experiment.
This article, a part of the larger research project of Surface-Enhanced Raman Scattering (SERS), ... more This article, a part of the larger research project of Surface-Enhanced Raman Scattering (SERS), describes an advanced study focusing on the shapes and materials of Tip-Enhanced Raman Scattering (TERS) designated to serve as part of a novel imager device. The initial aim was to define the optimal shape of the “probe”: tip or cavity, round or sharp. The investigations focused on the effect of shape (hemi-sphere, hemispheroid, ellipsoidal cavity, ellipsoidal rod, nano-cone), and the effect of material (Ag, Au, Al) on enhancement, as well as the effect of excitation wavelengths on the electric field. Complementary results were collected: numerical simulations consolidated with analytical models, based on solid assumptions. Preliminary experimental results of fabrication and structural characterization are also presented. Thorough analyses were performed around critical parameters, such as the plasmonic metal—Silver, Aluminium or Gold—using Rakic model, the tip geometry—sphere, spheroid...
A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LE... more A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LENS (Light Emitting Nano-pixel Structure), is a new nano-pixel structure designed to enable high-resolution display. It serves as the building block of a more complex structure called LENA (Light Emitting Nano-pixel Array), dedicated to nano-display applications, such as augmented and virtual reality (AVR). Previously designed and studied with a platform for ray tracing optimization, a complementary simulations study was performed using the Comsol Multi-Physics Platform in order to check for opto-electronics performance and physical nanoscale investigations. In addition to the physical complementary analysis, several studies have focused on optimizations: optimal geometry for a pixel (cylindrical or conical shape), and wavelength adaptation (optical communication). In addition to numerical simulation results, an analytical model has been developed. This new device holds the potential to e...
An advanced Surface-Enhanced Raman Scattering (SERS) Nanosensor Array, dedicated to serve in the ... more An advanced Surface-Enhanced Raman Scattering (SERS) Nanosensor Array, dedicated to serve in the future as a pH imager for the real-time detection of chemical reaction, is presented. The full flow of elementary steps—architecture, design, simulations, fabrication, and preliminary experimental results of structural characterization (Focused Ion Beam (FIB), TEM and SEM)—show an advanced SERS pixel array that is capable of providing spatially resolved measurements of chemical pH in a fluid target that became more than desirable in this period. Ultimately, the goal will be to provide real-time monitoring of a chemical reaction. The pixels consist of a nanostructured substrate composed of an array of projections or cavities. The shape of the nanostructures and the thickness of the metallic (Ag or Au) layer can be tuned to give maximal enhancement at the desired wavelength. The number and arrangement of nanostructures is optimized to obtain maximal responsivity.
A novel application of a combined and enhanced NSOM-AFM tip-photodetector system resulted in a na... more A novel application of a combined and enhanced NSOM-AFM tip-photodetector system resulted in a nanoscale Polarimeter, generated by four different holes, each sharing a different shape, and enabling that the four photonic readouts forming the tip will be the four Stokes coefficients, this in order to place the polarization state in the Poincare sphere. The new system has been built on standard Atomic Force Microscope (AFM) cantilever, in order to serve as a triple-mode scanning system, sharing complementary scanning topography, optical data analysis and polarization states. This new device, which has been designed and simulated using Comsol Multi-Physics software package, consists in a Platinum-Silicon drilled conical photodetector, sharing subwavelength apertures, and has been processed using advanced nanotechnology tools on a commercial silicon cantilever. After a comparison study of drilled versus filled tips advantages, and of several optics phenomena such as interferences, the a...
A comprehensive review of the main existing devices, based on the classic and new related Hall Ef... more A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized ...
Abstract. A numerical approach to calculate the power transfer between nanoscale waveguides was p... more Abstract. A numerical approach to calculate the power transfer between nanoscale waveguides was proposed. Series of complex power-transfer simulations have been performed when comparing two adjacent waveguides made of different materials. The results showed interesting focusing phenomena when coupling a waveguide sharing a high power confinement factor to a waveguide sharing a low one. In addition, we describe the physical properties of a nanoscale integrable waveguide for smooth integration in the microelectronics industry and analyze two case studies regarding such a possible integration. It seems that due to the lack of ability to confine the mode inside a nanoscale dimensions waveguide, combining waveguides with current size transistor may be, at this stage, difficult to realize without specific fits of the whole module.
LENS (Light Emitting Nano-pixel Structure), a new nano-metric device, was designed, simulated, an... more LENS (Light Emitting Nano-pixel Structure), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining high resolution and high brightness for display, essentially adapted for Augmented Reality (AR) and Virtual Reality. The device is made of two parts: The first one is a reflective nano-cone Light Emitting Device (LED) structure to reduce the Total Internal Reflection effects (TIR), and to enable improved light extraction efficiency. The second part is a Compound Parabolic Concentrator (CPC) above the nano-LED to narrow the outgoing light angular distribution so most of the light would be "accepted" by an imaging system. Such a way is drastically limiting any unnecessary light loss. Our simulations show that the total light intensity gain generated by each part of the pixel is at least 3800% when compared to a typical flat LED. It means that, for the same electrical power consumption, the battery life duration i...
Abstract. A new kind of super-high-intensity nano-emitting pixel, essentially adapted for augment... more Abstract. A new kind of super-high-intensity nano-emitting pixel, essentially adapted for augmented and virtual reality display applications, has been developed and simulated. In such a device, the pixels’ resolution is critical in order to offer a valuable use for military, professional, or consumer applications.
A new super-resolution method, entitled Near-field Projection Optical Microscopy (NPOM), is prese... more A new super-resolution method, entitled Near-field Projection Optical Microscopy (NPOM), is presented. This novel technique enables the imaging of nanoscale objects without the need for surface scanning, as is usually required in existing methods such as NSOM (near-field scanning optical microscope). The main advantage of the proposed concept, besides the elimination of the need for a mechanical scanning mechanism, is that the full field of regard/view is imaged simultaneously and not point-by-point as in scanning-based techniques. Furthermore, by using compressed sensing, the number of projected patterns needed to decompose the spatial information of the inspected object can be made smaller than the obtainable points of spatial resolution. In addition to the development of mathematical formalism, this paper presents the results of a series of complementary numerical tests, using various objects and patterns, that were performed to verify the accuracy of the reconstruction capabilities. We have also performed a proof of concept experiment to support the numerical formalism.
In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revo... more In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limits of available materials. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element’s indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of recent innovative design geometries has enabled the development of a series of silicon nanophotonics and nanoelectronics devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this comprehensive review is a new,methodical approach showcasing examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications. After presenting stand-alone devices, we discuss concerns, considerations, trends and forecasts regarding their possible integration into nanophotonics modules and platforms.
Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurati... more Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurations and usages, an original, cross-checking approach of combining analytical, experimental and numerical methods is presented to serve as a simple unified package for determining electrical resistivity. After a successful comparison based on error analysis between the different results, a robust correction of the analytical model is presented to extract the electrical resistivity from simulations results. Moreover, we present original results from a selection of models and measurements of resistivity applied to germanium samples sharing non-ideal geometries.
A thorough understanding of biological species and emerging nanomaterials requires, among other e... more A thorough understanding of biological species and emerging nanomaterials requires, among other efforts, their in-depth characterization through optical techniques capable of nanoresolution. Nanoscopy techniques based on tip-enhanced optical effects have gained tremendous interest over the past years, given their potential to obtain optical information with resolutions limited only by the size of a sharp probe interacting with focused light, irrespective of the illumination wavelength. Although their popularity and number of applications is rising, tip-enhanced nanoscopy (TEN) techniques still largely rely on probes that are not specifically developed for such applications, but for atomic force microscopy. This limits their potential in many
regards, e.g., in terms of signal-to-noise ratio, attainable image quality, or extent of applications. We take the first steps toward next-generation TEN by demonstrating the fabrication and modeling of specialized TEN probes with known optical properties. The proposed framework is highly flexible and can be easily adjusted to be used with diverse TEN techniques, building on various concepts and phenomena, significantly augmenting their function. Probes with known optical properties could potentially enable faster and more accurate imaging via different routes, such as direct signal enhancement or facile and ultrafast optical signal modulation. We consider that the reported development can pave the way for a vast number of novel TEN imaging protocols and applications, given the many advantages that it offers.
As part of the performance characterization of a combined and enhanced new AFM-NSOM tip photo-det... more As part of the performance characterization of a combined and enhanced new AFM-NSOM tip photo-detector, diffraction limitations were studied on two complementary samples: a nano-barrier embedded between two nano-apertures and one nano-aperture embedded between two nano-barriers. These consecutive multiple-obstacle scanning paths are part of this challenging specifications study of a new conical-shaped and drilled tip-photodetector, sharing a subwavelength aperture. A super-resolution algorithm feature was added in order to overcome possible obstacles, while scanning the same object with several small angles. The new multi-mode system includes scanning topography, optical imaging and an obstacle-overcoming algorithm. The present article study emphasizes the complexity of nano-scanning multiple-apertures/barriers. Both complementary analytical (Python) and numerical (Comsol) analyses are presented to forecast the expected scanning behavior and limitations.
Moreover, in addition to a new concept of a combined AFM-NSOM drilled photo-sensor tip, several breakthroughs are presented in the algorithm itself: treatment of one unique pixel, angular scanning and reconstruction of sub-wavelength information. The uniqueness of the present study lies in its provision of a comprehensive solution to near field scanning: a paired hardware and software package solution.
The analysis of low temperature modulated photoluminescence as a function of the dopant concentra... more The analysis of low temperature modulated photoluminescence as a function of the dopant concentration is presented for GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW). Such variation can enable optical pumping and Inter-Sub-Band Transitions (ISBT). Moreover, while using external trigger, like CO2 laser, controlled electron concentration dependent photoluminescence is measured. As a function of the reaction time of the transition phenomenon (absorption and relaxation), and of its intensity, one can use such special structure for the benefit of electro-optical communication at the nanoscale range. Numerical and experimental results match, and the method can be used towards the integration of AQW in advanced devices.
A polarizer transistor sharing a groove filtering aperture was developed. In the device, entitled... more A polarizer transistor sharing a groove filtering aperture was developed. In the device, entitled Silicon-On-Insulator Photo-Polarized Activated Modulator (SOIP 2 AM), one could think that the larger the V-groove, the higher is the absorbed illumination, and consequently the higher is the amount of new generated pairs of electrons-holes inside the device. In fact, the higher the illumination, the higher the destructive interference points inside the V-groove. Establishing a strong correlation between electrical and optical phenomena, two physical assumptions are presented. The first one is that observed "hot spots" (i.e. intense electrical field areas), are in fact the mirror of optical constructive interferences near the walls of the V-groove. The second assumption is that the closer the hot spots near the wall, the higher the generation of pairs of electrons-holes, since more absorbed photons. A new method, based on analytical hybrid optical model (Snell, Fresnel, Fourier, Energy Conservation), and numerical simulations, enabled to mathematically identify these phenomena, in order to optimize the modulator, as a function of several physical parameters such as the aperture angle, the groove's depth, the groove's shape (rectangular, triangular, rounded and parabolic), the light polarized direction, and the beam wavelength. Moreover, in order to optimize the absorption of the polarized illumination, several solutions are proposed. The present case study and proposed adapted solution can serve as a basis of generic approach in sensors' activation towards optimized polarized beam absorption.
The functionality of a nanoscale silicon-based optoelectronic modulator is deeply analyzed while ... more The functionality of a nanoscale silicon-based optoelectronic modulator is deeply analyzed while it appears that two competing processes, thermal and photonic, are occurring at the same time, and are preventing the optimization of the electro-optics coupling. While an incident illumination-beam first process is translated into photons, generating pairs of electrons–holes, a second process of thermal generation, creating phonons enables a loss of energy. Complementary studies, combining strong analytical models and numerical simulations, enabled to better understand this competition between photonic and thermal activities, in order to optimize the modulator. Moreover, in order to prevent unnecessary heating effects and to present a proposed solution, a picosecond pulsed laser is suggested and demonstrated as the ultimate solution so no energy will be wasted in heat, and still the photonic energy will be fully used. First ever-analytical solution to the heating produced due to the las...
Abstract A time dependent evaluation method is presented in order to visualize the changing behav... more Abstract A time dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature, electron concentration and electrical potential in semiconductor materials. If well-known experimental standard methods enable solid measurements and results, animated time-dependent simulations enable a good step-by-step follow-up of the mechanisms. An original combination of three complementary methods (analytical, numerical and experimental) is presented here as an exhaustive package to extract the Seebeck coefficient of Germanium using the Hot-Probe experiment.
This article, a part of the larger research project of Surface-Enhanced Raman Scattering (SERS), ... more This article, a part of the larger research project of Surface-Enhanced Raman Scattering (SERS), describes an advanced study focusing on the shapes and materials of Tip-Enhanced Raman Scattering (TERS) designated to serve as part of a novel imager device. The initial aim was to define the optimal shape of the “probe”: tip or cavity, round or sharp. The investigations focused on the effect of shape (hemi-sphere, hemispheroid, ellipsoidal cavity, ellipsoidal rod, nano-cone), and the effect of material (Ag, Au, Al) on enhancement, as well as the effect of excitation wavelengths on the electric field. Complementary results were collected: numerical simulations consolidated with analytical models, based on solid assumptions. Preliminary experimental results of fabrication and structural characterization are also presented. Thorough analyses were performed around critical parameters, such as the plasmonic metal—Silver, Aluminium or Gold—using Rakic model, the tip geometry—sphere, spheroid...
A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LE... more A nano light emitting device (LED) has been developed and is presented. This new LED, entitled LENS (Light Emitting Nano-pixel Structure), is a new nano-pixel structure designed to enable high-resolution display. It serves as the building block of a more complex structure called LENA (Light Emitting Nano-pixel Array), dedicated to nano-display applications, such as augmented and virtual reality (AVR). Previously designed and studied with a platform for ray tracing optimization, a complementary simulations study was performed using the Comsol Multi-Physics Platform in order to check for opto-electronics performance and physical nanoscale investigations. In addition to the physical complementary analysis, several studies have focused on optimizations: optimal geometry for a pixel (cylindrical or conical shape), and wavelength adaptation (optical communication). In addition to numerical simulation results, an analytical model has been developed. This new device holds the potential to e...
An advanced Surface-Enhanced Raman Scattering (SERS) Nanosensor Array, dedicated to serve in the ... more An advanced Surface-Enhanced Raman Scattering (SERS) Nanosensor Array, dedicated to serve in the future as a pH imager for the real-time detection of chemical reaction, is presented. The full flow of elementary steps—architecture, design, simulations, fabrication, and preliminary experimental results of structural characterization (Focused Ion Beam (FIB), TEM and SEM)—show an advanced SERS pixel array that is capable of providing spatially resolved measurements of chemical pH in a fluid target that became more than desirable in this period. Ultimately, the goal will be to provide real-time monitoring of a chemical reaction. The pixels consist of a nanostructured substrate composed of an array of projections or cavities. The shape of the nanostructures and the thickness of the metallic (Ag or Au) layer can be tuned to give maximal enhancement at the desired wavelength. The number and arrangement of nanostructures is optimized to obtain maximal responsivity.
A novel application of a combined and enhanced NSOM-AFM tip-photodetector system resulted in a na... more A novel application of a combined and enhanced NSOM-AFM tip-photodetector system resulted in a nanoscale Polarimeter, generated by four different holes, each sharing a different shape, and enabling that the four photonic readouts forming the tip will be the four Stokes coefficients, this in order to place the polarization state in the Poincare sphere. The new system has been built on standard Atomic Force Microscope (AFM) cantilever, in order to serve as a triple-mode scanning system, sharing complementary scanning topography, optical data analysis and polarization states. This new device, which has been designed and simulated using Comsol Multi-Physics software package, consists in a Platinum-Silicon drilled conical photodetector, sharing subwavelength apertures, and has been processed using advanced nanotechnology tools on a commercial silicon cantilever. After a comparison study of drilled versus filled tips advantages, and of several optics phenomena such as interferences, the a...
A comprehensive review of the main existing devices, based on the classic and new related Hall Ef... more A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized ...
Abstract. A numerical approach to calculate the power transfer between nanoscale waveguides was p... more Abstract. A numerical approach to calculate the power transfer between nanoscale waveguides was proposed. Series of complex power-transfer simulations have been performed when comparing two adjacent waveguides made of different materials. The results showed interesting focusing phenomena when coupling a waveguide sharing a high power confinement factor to a waveguide sharing a low one. In addition, we describe the physical properties of a nanoscale integrable waveguide for smooth integration in the microelectronics industry and analyze two case studies regarding such a possible integration. It seems that due to the lack of ability to confine the mode inside a nanoscale dimensions waveguide, combining waveguides with current size transistor may be, at this stage, difficult to realize without specific fits of the whole module.
LENS (Light Emitting Nano-pixel Structure), a new nano-metric device, was designed, simulated, an... more LENS (Light Emitting Nano-pixel Structure), a new nano-metric device, was designed, simulated, and modeled for feasibility analysis, with the challenge of combining high resolution and high brightness for display, essentially adapted for Augmented Reality (AR) and Virtual Reality. The device is made of two parts: The first one is a reflective nano-cone Light Emitting Device (LED) structure to reduce the Total Internal Reflection effects (TIR), and to enable improved light extraction efficiency. The second part is a Compound Parabolic Concentrator (CPC) above the nano-LED to narrow the outgoing light angular distribution so most of the light would be "accepted" by an imaging system. Such a way is drastically limiting any unnecessary light loss. Our simulations show that the total light intensity gain generated by each part of the pixel is at least 3800% when compared to a typical flat LED. It means that, for the same electrical power consumption, the battery life duration i...
Abstract. A new kind of super-high-intensity nano-emitting pixel, essentially adapted for augment... more Abstract. A new kind of super-high-intensity nano-emitting pixel, essentially adapted for augmented and virtual reality display applications, has been developed and simulated. In such a device, the pixels’ resolution is critical in order to offer a valuable use for military, professional, or consumer applications.
23rd International Conference on Transparent Optical Networks (ICTON), 2023
Traditional CMOS and FinFET shrinking techniques have begun to reach the physical limits of avail... more Traditional CMOS and FinFET shrinking techniques have begun to reach the physical limits of available materials, and a revolution in silicon photonics communication is necessary to continue to meet the ever-growing demands on microprocessors. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element’s indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of innovative design geometries has enabled the development of a series of silicon nanophotonic and nanoelectronic devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this short review are a few working examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications.
Persisting in the large trend to enhance the Near-field Scanning Optical Microscopy and the detec... more Persisting in the large trend to enhance the Near-field Scanning Optical Microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector, and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using Finite Elements Method and 3D advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Electrooptical simulations have been conducted. These results are promising towards the fabrication of a new generation of photodetector devices.
2018 IEEE International Conference on the Science of Electrical Engineering in Israel (ICSEE), 2018
As part of the sensitivity evaluation of a new sensor designed for Near-field Scanning Optical Mi... more As part of the sensitivity evaluation of a new sensor designed for Near-field Scanning Optical Microscopy (NSOM) and for detection of evanescent waves, advanced 2D simulations have been conducted: The photodetector device, shifted across a vertically oriented Gaussian beam, itself passing through a slit set on an opaque barrier, may collect the projected light on its top subwavelength aperture. The device is silicon Schottky nanoscale diode shaped as a truncated pyramid photodetector, and sharing a subwavelength slit aperture. Using Finite Elements Method (FEM) electro-optical simulations have been conducted. These results are promising towards the fabrication of a new generation of photodetector devices.
2018 IEEE International Conference on the Science of Electrical Engineering in Israel (ICSEE), 2018
The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been stud... more The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been studied, as part of a large effort to develop optoelectronic high-speed devices for optical communication. The influence of nano/micro-crystal dots, embedded in a thick SiO2 film grown on a silicon substrate, has been studied as a function of several parameters such as the sweep rate, the penetration depth, the dots size and the various materials properties of several elements. We numerically demonstrate capabilities of future faster optoelectronic responsivity. The obtained series of C-V curves enable a good forecast of the possible usage and applications, such as MOSFET, tunable capacitor, memory unit, and Boolean logic element.
2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE), 2016
A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is deve... more A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon bandgap constraint, and to serve as a future light emitting device in NIR [0.8-2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model and simulations are presented.
Photonic and Phononic Properties of Engineered Nanostructures VII, 2017
We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and o... more We developed a new type of silicon MOSFET Quantum Well transistor, coupling both electronic and optical properties which should overcome the indirect silicon bandgap constraint, and serve as a future light emitting device in the range 0.8-2μm, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such Quantum Well structure enables discrete energy levels for light recombination. Model and simulations of both optical and electric properties are presented pointing out the influence of the channel thickness and the drain voltage on the optical emission spectrum.
2015 International Conference on Optical MEMS and Nanophotonics (OMN), 2015
The constantly growing use of real time computing generates constant urge for much faster process... more The constantly growing use of real time computing generates constant urge for much faster processors than those which are currently available in the market. Correspondingly there is an accelerated development of new optics communication related applications and components. The effort to combine those two trends leads to the generation of new optoelectronic nano-devices. These hybrid devices allow high operation speed, reduced cross talk and other noises, low operation power and make unnecessary the electro-optical convertors existing. In this challenging research project we present the design, simulation, fabrication and characterization of an optoelectronic device based on Silicon which is capable of speeding up the processing capabilities. This novel device is called the Silicon-On-Insulator Photo-Activated Modulator (SOI-PAM). The nature of the data flow in this device is electronic while the modulation control command is optic. Since the external voltage in the final configuration design of the device is constant and no RC related delay is generated, faster operation rates are anticipated. This novel device can serve as a building block towards the development of optical data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.
The constantly growing use of real time computing generates constant urge for much faster process... more The constantly growing use of real time computing generates constant urge for much faster processors than those which are currently available in the market. Correspondingly there is an accelerated development of new optics communication related applications and components. The effort to combine those two trends leads to the generation of new electro-optical nano-devices. These hybrid electro-optical devices allow high operation speed, reduced cross talk and other noises, low operation power and make unnecessary the electro-optical convertors existing in the optical communication links. In this challenging research project we present the design, simulation, fabrication and characterization of an of electro-optical nano devices based on Silicon which are capable of speeding up the processing capabilities. This novel device is called the Silicon On Insulator Photo-Activated Modulator (SOI-PAM). In a new version of the device design, some quantum effects would be studied as well. The in...
2014 IEEE 28th Convention of Electrical & Electronics Engineers in Israel (IEEEI), 2014
ABSTRACT Two kinds of Fully Depleted Silicon-On-Insulator (FD-SOI) MOSFETs were electrically meas... more ABSTRACT Two kinds of Fully Depleted Silicon-On-Insulator (FD-SOI) MOSFETs were electrically measured at 300K and at 77K and compared. Both the devices, Ultra-Thin Body (UTB) and Nano Scale Body (NSB), are sharing the same W/L ratio but are having a channel thickness of 46 nm and 2.2 nm respectively. For both the temperatures, the devices' respective linear transfer characteristics were found to be surprisingly different by several orders of magnitude. Moreover, by decreasing the temperature, their behaviors were radically opposite: If for UTB device, the electrical conduction was increased, the opposite effect was observed for NSB. We analyzed the latter result by considering the severe mobility degradation in terms of the influence of a huge voltage dependent series resistance and found it to be more physically coherent. This influence is integrated into a simple but accurate analytical model in order to describe the trends of the transfer characteristics. This new modeling approach may be useful to interpret anomalous electrical behavior of other nano-devices in which series resistance and/or mobility degradation is of a great concern.
Ultrathin (UTB) and Nanoscale (NSB) SOI-MOSFET devices (with same W/L =80/8 μm) having respective... more Ultrathin (UTB) and Nanoscale (NSB) SOI-MOSFET devices (with same W/L =80/8 μm) having respectively a channel thickness of 46 nm and as low as 1.6 nm were simultaneously fabricated on a same chip, using a selective “gate recessed” process. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques like Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), has contributed to explain the difference of transport between the devices.
B.L.U.E. (Building Latch-Up Effectiveness) SKY, is a multiple and complementary user-friendly out... more B.L.U.E. (Building Latch-Up Effectiveness) SKY, is a multiple and complementary user-friendly outcome solution and method to address optimal Latch-Up Guard Rings (GR) protection, permitting cost, effort and time saving, and assuring higher design quality. The major accomplishment of this solution, based on deep case studies reviews, is the consolidation of process, tool and design aspects of Latch-Up (LU). The B.L.U.E. SKY Working Group established a structured format to help filling this gap. Tens of circuit case-studies were analyzed in brainstorming meetings, grouping a team of experts, and BKM were derived for layout (LO) Cost-Time-Effort reduction benefit. A Multiple-Outcome was released including among others: A step-by-step method to review LU need, a giant LU Reference Database (Web), a Compilation of all the case studies reviews with their corresponding derivated BKM (Class), diverse BKM Quick-References (cubicle wall hanging summaries), adapted automations at both schemati...
A new Metrology Methodology has been developed by the Fab Metrology Engineering and Applications ... more A new Metrology Methodology has been developed by the Fab Metrology Engineering and Applications Laboratory. This methodology offers advanced instruction to process engineers on all Film Thickness Measuring Techniques (FTMT). It includes comparison of physical principles, similarities and differences in advanced operations and applications, comparison of engineering utilities, advanced troubleshooting of process events and ready-made solutions to measurement problems. This new Methodology, called S.U.P.E.R.M.A.N. *, is part of a "Combined Triangular Solution" (CTS) for knowledge enhancement of physics and advanced applications of analytical tools. The CTS consists of: 1) Theory - A spectacular animated Intranet site serving as a universal Metrology Learning Center accessible by all Intel fabs. 2) Practice - A tool-simulator station. Knowledge enhancement. 3) A course in “Advanced Measurement Operations and Applications. * SUPERMAN - Site University for Process Engineers Re...
A detector device is presented for use in a surface probing system. The detector device comprises... more A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.
ספר דרשות על פרשת השבוע ותחנות החיים מתוך מבט חינוכי של רב קהילה. לספר 101 דרשות, 624 עמודים, 17 ... more ספר דרשות על פרשת השבוע ותחנות החיים מתוך מבט חינוכי של רב קהילה. לספר 101 דרשות, 624 עמודים, 17 הסכמות. תקציר שבגב הספר: בספר מאמרים קצרים (וְדָרַשְׁתָּ) ודרשות ארוכות (וְחָקַרְתָּ), מפרשת השבוע וממעגל החיים היהודי, מהלידה ועד לפטירה, הכתובים בצורה קולחת וזורמת, מן ארגז כלים בו אפשר למצוא במהירות את הנושא אותו מחפשים, כתוב בצורה תמציתית הנושאת בחובה רעיון מקורי, הקולע אל נפש קהל השומעים. כל המאמרים הושמעו מפי המחבר אל קהל עדתו, והם פרי עבודה של ארבעים שנה של שימוש תלמידי חכמים (וְשָׁאַלְתָּ הֵיטֵב) ושל שתים-עשרה שנה ברבנות קהילה, ולכן הם כתובים בצורה השווה לכל נפש. משום כך זהו ספר בסיסי עבור רב קהילה ממנו יוכל ליטול בקלות יתירה דרשה איכותית קצרה/ארוכה לקהל עדתו בהתאם לצורך. המאמרים עברו סינון והגהה כדי שיצאו סולת נקיה, שתוכל להתלבש בצורה נאה ויפה על נפשות השומעים. חידוש נוסף בספר הוא ;המסרים של הרב אל קהילתו, שמופיעים בפתיחת כל דרשה ומאמר בספר, כשהם למעשה מתמצתים את התכלית של הדרשה והמאמר, עוד קודם הקריאה בהם.
Whenever a business opportunity emerges, any company's management (i.e.: marketing staff, fin... more Whenever a business opportunity emerges, any company's management (i.e.: marketing staff, financial officers, legal advisers etc.) has to assess the viability of the opportunity. This may be done through analysis based on financial measures such as the expected Return-On-Investment (ROI) or other business measures. The purpose of the assessment is aimed at eliminating any non-profitable/non-desirable business engagement. In today's dynamic business environment with intensive competition the dilemma is quite simple: On one hand there is a need to perform a thorough background analysis, resulting in a high cost and time consuming efforts. On the other hand, the faster the relevant analysis is completed naturally the chances to achieve the business opportunity is much better (for example; to sign a contract with a customer before the competitors do or to submit a "winning" proposal in a public tender). Sometimes management's due to various reasons such as lengthy ...
At the 13th century, the Italian Mathematician Fibonacci discovered the series that was called on... more At the 13th century, the Italian Mathematician Fibonacci discovered the series that was called on his name, when searching for the reproduction rates of the rabbits. In these series, except for the two first numbers (1, 1), each one of the other numbers is the sum of the two consecutive numbers before. Also the ratio of two consecutive numbers is approaching the value of the famous Golden Ratio called Phi, an irrational number, holding the value of Phi. The ratio is getting more accurate when progressing in series. As deeply demonstrated in the past by the author, the Golden Ration as well as the Fibonacci Suite is appearing not only in the dimensions of almost every state of the life, but also in the Written Torah as well as in the Oral Torah. This time we would demonstrate that not only the dimensions of the life are built according to those numbers, but also the reproduction rate of the wild life and animals like rabbits and pigeons, is following this law. At the 5th Century, Rav...
The Talmud uses “axioms” describing man in his environment. One of them is brought in the Berakho... more The Talmud uses “axioms” describing man in his environment. One of them is brought in the Berakhot tractate: “Three things increase a man’s self-esteem: a beautiful dwelling, a beautiful wife, and beautiful clothes.” Beyond the spiritual approach, this axiom can be explained using the mathematical Golden Ratio (Phi) value. This assumed divine proportion appears in nature and the human body like a divine stamp, suggesting that the world is a planned creation. It exists not only in global architecture and art, but also in Noah’s Ark, the Tabernacle, and the Temple. In this article, we demonstrate three novelties: 1) Even Talmudic axioms can be explained with mathematics; 2) the Golden Ratio, primarily cited in non-Jewish references, also appears in the Torah; and 3) the difficulty to identify the Golden Ratio in Torah texts is related not only to its different historical names, but also to the fundamentally different approach between Torah and other cultures.
Traditional CMOS and FinFET shrinking techniques have begun to reach the physical limits of avail... more Traditional CMOS and FinFET shrinking techniques have begun to reach the physical limits of available materials, and a revolution in silicon photonics communication is necessary to continue to meet the ever-growing demands on microprocessors. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element’s indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of innovative design geometries has enabled the development of a series of silicon nanophotonic and nanoelectronic devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this short review are a few working examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications.
Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurati... more Following a comprehensive top-to-bottom review of the four-point probe’s (4PP) system configurations and usages, an original, cross-checking approach of combining analytical, experimental and numerical methods is presented to serve as a simple unified package for determining electrical resistivity. After a successful comparison based on error analysis between the different results, a robust correction of the analytical model is presented to extract the electrical resistivity from simulations results. Moreover, we present original results from a selection of models and measurements of resistivity applied to germanium samples sharing non-ideal geometries.
In this article, a spatial-dependent evaluation method is presented in order to visualize the cha... more In this article, a spatial-dependent evaluation method is presented in order to visualize the changing behavior of several parameters such as temperature and electrical potential in semiconductor materials. If well-known experimental standard methods enable solid measurements and results, space-dependent simulations enable a good step-by-step follow-up of the mechanisms. The original combination of three complementary methods (analytical, numerical and experimental) is presented here as a whole package to extract the Seebeck coefficient of Germanium for small temperature variations above room temperature. An experimental negative temperature effect on the Seebeck coefficient for n-type Ge was successfully interpreted by the influence of minority carriers at low doping level, showing by the way some limitations of the analytical and numerical model.
Silicon-on-insulator (SOI) and bulk metal–oxide–semiconductor (MOS) transistors were fabricated s... more Silicon-on-insulator (SOI) and bulk metal–oxide–semiconductor (MOS) transistors were fabricated simultaneously and tested electrically and optically at room temperature. The electroluminescence (EL) spectrum has been measured in both types of devices. A visible emitted radiation was observed when both devices were operated in the avalanche breakdown mode. In the case of SOI device, five different peaks at a photon energy of 2.31, 2.06, 1.81, 1.63, and 1.50 eV were observed. The regular spacing between the measured peaks indicates cavity effects due to the various layers of the SOI MOS transistor structure. The thin silicon layer thickness of 400 Å seems to be responsible for the factor of about 16 in the EL intensity of the SOI device as compared to the bulk device.
A polarizer transistor sharing a groove filtering aperture was developed. In the device, entitled... more A polarizer transistor sharing a groove filtering aperture was developed. In the device, entitled Silicon-On-Insulator Photo-Polarized Activated Modulator (SOIP 2 AM), one could think that the larger the V-groove, the higher is the absorbed illumination, and consequently the higher is the amount of new generated pairs of electrons-holes inside the device. In fact, the higher the illumination, the higher the destructive interference points inside the V-groove. Establishing a strong correlation between electrical and optical phenomena, two physical assumptions are presented. The first one is that observed "hot spots" (i.e. intense electrical field areas), are in fact the mirror of optical constructive interferences near the walls of the V-groove. The second assumption is that the closer the hot spots near the wall, the higher the generation of pairs of electrons-holes, since more absorbed photons. A new method, based on analytical hybrid optical model (Snell, Fresnel, Fourier, Energy Conservation), and numerical simulations, enabled to mathematically identify these phenomena, in order to optimize the modulator, as a function of several physical parameters such as the aperture angle, the groove's depth, the groove's shape (rectangular, triangular, rounded and parabolic), the light polarized direction, and the beam wavelength. Moreover, in order to optimize the absorption of the polarized illumination, several solutions are proposed. The present case study and proposed adapted solution can serve as a basis of generic approach in sensors' activation towards optimized polarized beam absorption.
Abstract. A new kind of super-high-intensity nano-emitting pixel, essentially adapted for augment... more Abstract. A new kind of super-high-intensity nano-emitting pixel, essentially adapted for augmented and virtual reality display applications, has been developed and simulated. In such a device, the pixels’ resolution is critical in order to offer a valuable use for military, professional, or consumer applications.
The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been stud... more The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been studied, as part of a large effort to develop optoelectronic high-speed devices for optical communication. The influence of nano/micro-crystal dots, embedded in a thick SiO2 film grown on a silicon substrate, has been studied as a function of several parameters such as the sweep rate, the penetration depth, the dots size and the various materials properties of several elements. We numerically demonstrate capabilities of future faster optoelectronic responsivity. The obtained series of C-V curves enable a good forecast of the possible usage and applications, such as MOSFET, tunable capacitor, memory unit, and Boolean logic element.
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Journal papers by Avi Karsenty
development of mathematical formalism, this paper presents the results of a series of complementary numerical tests, using various objects and patterns, that were performed to verify the accuracy of the reconstruction capabilities. We have also performed a proof of concept experiment to support the numerical formalism.
regards, e.g., in terms of signal-to-noise ratio, attainable image quality, or extent of applications. We take the first steps toward next-generation TEN by demonstrating the fabrication and modeling of specialized TEN probes with known optical properties. The proposed framework is highly flexible and can be easily adjusted to be used with diverse TEN techniques, building on various concepts and phenomena, significantly augmenting their function. Probes with known optical properties could potentially enable faster and more accurate imaging via different routes, such as direct signal enhancement or facile and ultrafast optical signal modulation. We consider that the reported development can pave the way for a vast number of novel TEN imaging protocols and applications, given the many advantages that it offers.
Moreover, in addition to a new concept of a combined AFM-NSOM drilled photo-sensor tip, several breakthroughs are presented in the algorithm itself: treatment of one unique pixel, angular scanning and reconstruction of sub-wavelength information. The uniqueness of the present study lies in its provision of a comprehensive solution to near field scanning: a paired hardware and software package solution.
development of mathematical formalism, this paper presents the results of a series of complementary numerical tests, using various objects and patterns, that were performed to verify the accuracy of the reconstruction capabilities. We have also performed a proof of concept experiment to support the numerical formalism.
regards, e.g., in terms of signal-to-noise ratio, attainable image quality, or extent of applications. We take the first steps toward next-generation TEN by demonstrating the fabrication and modeling of specialized TEN probes with known optical properties. The proposed framework is highly flexible and can be easily adjusted to be used with diverse TEN techniques, building on various concepts and phenomena, significantly augmenting their function. Probes with known optical properties could potentially enable faster and more accurate imaging via different routes, such as direct signal enhancement or facile and ultrafast optical signal modulation. We consider that the reported development can pave the way for a vast number of novel TEN imaging protocols and applications, given the many advantages that it offers.
Moreover, in addition to a new concept of a combined AFM-NSOM drilled photo-sensor tip, several breakthroughs are presented in the algorithm itself: treatment of one unique pixel, angular scanning and reconstruction of sub-wavelength information. The uniqueness of the present study lies in its provision of a comprehensive solution to near field scanning: a paired hardware and software package solution.