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Observation of a pressure-induced transition from interlayer ferromagnetism to intralayer antiferromagnetism in Sr4Ru3O10

H. Zheng, W. H. Song, J. Terzic, H. D. Zhao, Y. Zhang, Y. F. Ni, L. E. DeLong, P. Schlottmann, and G. Cao
Phys. Rev. B 98, 064418 – Published 21 August 2018
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  • INTRODUCTION
  • EXPERIMENTAL DETAILS
  • RESULTS AND DISCUSSION
  • CONCLUSIONS
  • ACKNOWLEDGMENTS
    • References

    Abstract

    Sr4Ru3O10 is a Ruddlesden-Popper compound with triple Ru-O perovskite layers separated by Sr-O rock-salt layers. This compound presents a rare coexistence of interlayer (c-axis) ferromagnetism and intralayer (basal-plane) metamagnetism at ambient pressure. Here we report the observation of pressure-induced, intralayer itinerant antiferromagnetism arising from the interlayer ferromagnetism. The application of modest hydrostatic pressure generates an anisotropy that may cause a flattening and a tilting of RuO6 octahedra. All magnetic and transport results from this study indicate these lattice distortions diminish the c-axis ferromagnetism and basal-plane metamagnetism, and induce a basal-plane antiferromagnetic state. The unusually large magnetoelastic coupling and pressure tunability of Sr4Ru3O10 makes it a model system for studies of itinerant magnetism.

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    • Received 21 June 2018
    • Revised 3 August 2018

    DOI:https://doi.org/10.1103/PhysRevB.98.064418

    ©2018 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    AntiferromagnetismFerromagnetismMagnetic anisotropyMagnetic phase transitionsMagnetismMetamagnetism
    1. Physical Systems
    Single crystal materials
    1. Techniques
    Magnetization measurementsPressure effectsResistivity measurements
    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    H. Zheng1, W. H. Song1,2, J. Terzic3, H. D. Zhao1, Y. Zhang1, Y. F. Ni1, L. E. DeLong4, P. Schlottmann5, and G. Cao1,*

    • 1Department of Physics, University of Colorado at Boulder, Boulder, Colorado 80309, USA
    • 2Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
    • 3National High Magnetic Field Laboratory, Tallahassee, Florida 32306, USA
    • 4Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, USA
    • 5Department of Physics, Florida State University, Tallahassee, Florida 32306, USA

    • *gang.cao@colorado.edu

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    Vol. 98, Iss. 6 — 1 August 2018

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    Images

    • Figure 1
      Figure 1

      (a) Temperature dependence of the magnetization M at μoH=0.01T, and (b) isothermal magnetization M(H) at T=1.8 K for both the basal-plane Mab and the c-axis Mc at ambient pressure. Inset: Schematic of the triple-layered crystal structure; the curved arrows indicate the rotation of the RuO6 octahedra. Note that the data in this figure, which was from our earlier work [21], were taken at ambient pressure without the pressure cell, and they are presented here only to serve as part of the introduction of the title material.

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    • Figure 2
      Figure 2

      Temperature dependence of the magnetization M at μoH=0.1T for (a) the basal plane Mab, (b) the c-axis Mc at representative pressures, and (c) Mab and Mc at P=10 kbar for comparison. Insets in (a) and (b): 1/Δχ at P=0 and 10 kbar vs T, where Δχ= magnetic susceptibility χ–Pauli susceptibility χo, for the basal plane and the c axis, respectively. Inset in (c): Mab and Mc at P=0 kbar. (d) Schematic for pressure-induced changes in the spin configuration. Note that the magnitude of Mab (and Mc) rapidly increases (decreases) with P, which is highlighted by the two broad vertical arrows.

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    • Figure 3
      Figure 3

      Temperature dependence of the electrical resistivity for (a) the basal plane ρab and (b) the c axis ρc at representative pressures. Note the modest decrease in ρab and the considerable increase in ρc with P, which is marked by the broad arrow. (c) The exponent α of ρc∼Tα as a function of pressure P. Note that the shaded area marks the rapid change in α. (d) Schematic for pressure-induced changes in the RuO6 octahedra.

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    • Figure 4
      Figure 4

      The isothermal magnetization at T=2 K for (a) the basal plane Mab for H|| basal plane and (b) the c axis Mc for H||c axis at a few representative pressures.

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    • Figure 5
      Figure 5

      Magnetic-field dependence of the electrical resistivity at 2 K for (a) the basal plane ρab, (b) the c axis ρc at representative pressures, and (c) ρab and ρc and Mab (right scale) at P=8 kbar for comparison. (d) Schematic for field-induced changes in the spin configuration. Note that the two broad horizontal arrows in Fig. 5 are to highlight the rapid decrease in Hc with P, and the vertical dashed line in Fig. 5 indicates Hc.

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    • Figure 6
      Figure 6

      A T−P phase diagram generated based on the magnetic and transport results. Note that TC and TM appear to merge as the antiferromagnetic state is fully developed at P≥25 kbar. Note that the shaded areas near 10 kbar mark a crossover from the c-axis FM state to a predominately basal-plane AFM state.

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