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Connecting the Reentrant Insulating Phase and the Zero-Field Metal-Insulator Transition in a 2D Hole System

R. L. J. Qiu, X. P. A. Gao, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 108, 106404 – Published 7 March 2012

Abstract

We present the transport and capacitance measurements of 10 nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density pc down to 0.8×1010/cm2, rs36). For metallic hole density pc<p<pc+0.15×1010/cm2, a reentrant insulating phase (RIP) is observed between the ν=1 quantum Hall state and the zero-field metallic state and it is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density, we show that the RIP is incompressible and continuously connected to the zero-field insulator, suggesting a similar origin for these two phases.

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  • Received 21 September 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.106404

© 2012 American Physical Society

Authors & Affiliations

R. L. J. Qiu1, X. P. A. Gao1,*, L. N. Pfeiffer2, and K. W. West2

  • 1Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, USA
  • 2Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *xuan.gao@case.edu

Comments & Replies

Comment on “Connecting the Reentrant Insulating Phase and the Zero-Field Metal-Insulator Transition in a 2D Hole System”

A. Yu. Kuntsevich and V. M. Pudalov
Phys. Rev. Lett. 110, 249701 (2013)

Qiu and Gao Reply:

R. L. J. Qiu and X. P. A. Gao
Phys. Rev. Lett. 110, 249702 (2013)

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Vol. 108, Iss. 10 — 9 March 2012

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Images

  • Figure 1
    Figure 1
    (a) Zero-field MIT with a critical density pc0.8×1010/cm2 in a 10 nm wide GaAs QW (sample 5B); ρ(T) at p=1.33, 1.14, 0.94, 0.86, 0.82, 0.78, 0.75, 0.63, 0.55 are shown. (b) Magnetoresistivity of sample 5B with p=0.86 at T=50mK, 65 mK, 80 mK, 0.1 K, 0.15 K, and 0.2 K. The reentrant insulating phase (RIP) resides between the ν=1 and ν=2 QH states. (c) Arrhenius plot of the resistance at the peak of the RIP from sample 11C (pc0.95×1010/cm2) at densities of 0.9, 0.96, 1.03, 1.09, 1.15, and 1.21.( d) Fitted thermal activation gap ΔRIP vs hole densities in samples 5B and 11C.Reuse & Permissions
  • Figure 2
    Figure 2
    (a) Capacitance (symbol) and resistance (line) vs perpendicular magnetic field for QW 11D at 70 mK at p=0.86, 0.95, 1.02, 1.12, 1.25, 1.42, and 1.73. The ν=1 QH state gradually weakens as the density decreases, and eventually disappears, followed by the emergence of the new RIP. The dashed line is the estimated value of geometric capacitance C0.(b) Longitudinal resistance map of QW 11C in p-B plane at 70 mK. As the color varies from red (in the ν=1   QH) to violet (in the RIP or HFIP), the resistance increases from 300   Ω to 300   kΩ in a log scale. The area with resistance larger than 300kΩ is filled with violet. (c) Capacitance of QW 11D in p-B plane at 70 mK. The capacitance drops from 2.7 to 2.2nF as the color changes from red (in the area between the ν=1   QH and the RIP or HFIP) to violet (in the ν=1   QH and RIP or HFIP).Reuse & Permissions
  • Figure 3
    Figure 3
    (a),(b),(c) Contour map of the longitudinal resistivity of a 10 nm wide p-type GaAs QW (sample QW 5B) in the p-B plane at T=150, 80, and 50 mK. (d) Schematic phase diagram converted from Fig. 14 of Ref. 26b, in which the Wigner solid phase is predicted to exist between the 2D hole liquid at B=0 and the QH liquids at ν=1 and 1/3.Reuse & Permissions
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